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David K Ting, 94516 Magellan Rd, Arcadia, CA 91007

Known as:
David Kt Ing
Related to:
Jui Hsia Chiang 66 Hung-Shi Ting

David Ting Phones & Addresses

516 Magellan Rd, Arcadia, CA 91007    626-4463852   

Palm Coast, FL   

8255 E Live Oak St, San Gabriel, CA 91776   

Flushing, NY   

Lenexa, KS   

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Career records & work history

Medicine Doctors

David Y. Ting

Specialties:
Pediatrics, Internal Medicine
Work:
MGH Everett Family CareMassachusetts General Hospital Everett Family Care
19 Norwood St, Everett, MA 02149
617-3947500 (phone) 617-3947587 (fax)
Site
Massachusetts General Hospital Oncology
55 Fruit St, Boston, MA 02114
617-7244000 (phone) 617-6430798 (fax)
Education:
Medical School
Duke University School of Medicine
Graduated: 1993
Procedures:
Vaccine Administration, Psychological and Neuropsychological Tests
Conditions:
Anxiety Phobic Disorders, Acne, Acute Bronchitis, Acute Pancreatitis, Acute Pharyngitis, Acute Sinusitis, Acute Upper Respiratory Tract Infections, Anemia, Atopic Dermatitis, Atrial Fibrillation and Atrial Flutter, Attention Deficit Disorder (ADD), Benign Prostatic Hypertrophy, Bipolar Disorder, Bronchial Asthma, Chronic Renal Disease, Constipation, Diabetes Mellitus (DM), Disorders of Lipoid Metabolism, Erectile Dysfunction (ED), Gastroesophageal Reflux Disease (GERD), Glaucoma, Gout, Hearing Loss, Herpes Simplex, Herpes Zoster, Hypertension (HTN), Hypothyroidism, Infectious Mononucleosis, Inflammatory Bowel Disease (IBD), Iron Deficiency Anemia, Ischemic Heart Disease, Metabolic Syndrome, Migraine Headache, Osteoarthritis, Otitis Media, Overweight and Obesity, Plantar Fascitis, Pneumonia, Psoriasis, Restless Leg Syndrome, Schizophrenia, Sickle-Cell Disease, Skin and Subcutaneous Infections, Substance Abuse and/or Dependency, Systemic Lupus Erythematosus, Urinary Incontinence, Venous Embolism and Thrombosis, Vitamin D Deficiency
Languages:
English
Description:
Dr. Ting graduated from the Duke University School of Medicine in 1993. He works in Boston, MA and 1 other location and specializes in Pediatrics and Internal Medicine. Dr. Ting is affiliated with Massachusetts General Hospital.

David Ting resumes & CV records

Resumes

David Ting Photo 39

David Ting

David Ting Photo 40

David Ting

Location:
United States
David Ting Photo 41

David Ting

Location:
Greater Los Angeles Area
Industry:
Computer Software
David Ting Photo 42

David Ting

Location:
Greater Los Angeles Area
Industry:
Entertainment
David Ting Photo 43

David Ting

Location:
United States

Publications & IP owners

Wikipedia

David Ting Photo 44

David Ting

David Ting is the former Head of the office of the European Commission in Hong Kong & Macau. He holds a Ph. D. in Political Science from the University of ...

Us Patents

Multi-Quantum-Well Detector For Low-Background Applications

US Patent:
6674091, Jan 6, 2004
Filed:
Sep 26, 2001
Appl. No.:
09/967842
Inventors:
Sarath D. Gunapala - Stevenson Ranch CA
Sumith V. Bandara - Stevenson Ranch CA
John K. Liu - Pasadena CA
Sir B. Rafol - South Pasadena CA
David Z. Ting - Arcadia CA
Jason M. Mumolo - Altadena CA
Assignee:
California Institute of Technology - Pasadena CA
International Classification:
H01L 27146
US Classification:
257 21, 257184
Abstract:
Device designs and techniques for reducing the dark current in quantum-well detectors.

Strongly-Refractive One-Dimensional Photonic Crystal Prisms

US Patent:
6825982, Nov 30, 2004
Filed:
Jun 27, 2002
Appl. No.:
10/185829
Inventors:
David Z Ting - Arcadia CA
Assignee:
The United States of Americas as represented by the Administrator of the National Aeronautics and Space Administration - Washington DC
International Classification:
G02B 110
US Classification:
359580, 359586, 359587, 359831
Abstract:
One-dimensional (1D) photonic crystal prisms can separate a beani of polychromatic electromagnetic waves into constituent wavelength components and can utilize unconventional refraction properties for wavelength dispersion over significant portions of an entire photonic band rather than just near the band edges outside the photonic band gaps. Using a 1D photonic crystal simplifies the design and fabrication process and allows the use of larger feature sizes. The prism geometry broadens the useful wavelength range, enables better optical transmission, and exhibits angular dependence on wavelength with reduced non-linearity. The properties of the 1D plhotonic crystal prism can be tuned by varying design parameters such as incidence angle, exit surface angle, and layer widths. The 1D photonic crystal prism can be fabricated in a planar process, and can be used as optical integrated circuit elements.

Nanotunneling Junction-Based Hyperspectal Polarimetric Photodetector And Detection Method

US Patent:
7501636, Mar 10, 2009
Filed:
Sep 20, 2007
Appl. No.:
11/858230
Inventors:
Kyung-ah Son - Moorpark CA, US
Jeongsun J. Moon - Moorpark CA, US
Goutam Chattopadhyay - Pasadena CA, US
Anna Liao - Montrose CA, US
David Ting - Arcadia CA, US
Assignee:
The United States of America as represented by the Administrator of the National Aeronautics and Space Administration - Washington DC
International Classification:
G01T 1/24
US Classification:
25037014, 257414
Abstract:
A photodetector, detector array, and method of operation thereof in which nanojunctions are formed by crossing layers of nanowires. The crossing nanowires are separated by a few nm thick electrical barrier layer which allows tunneling. Each nanojunction is coupled to a slot antenna for efficient and frequency-selective coupling to photo signals. The nanojunctions formed at the intersection of the crossing wires defines a vertical tunneling diode that rectifies the AC signal from a coupled antenna and generates a DC signal suitable for reforming a video image. The nanojunction sensor allows multi/hyper spectral imaging of radiation within a spectral band ranging from terahertz to visible light, and including infrared (IR) radiation. This new detection approach also offers unprecedented speed, sensitivity and fidelity at room temperature.

Ultra Compact Spectrometer Apparatus And Method Using Photonic Crystals

US Patent:
7599061, Oct 6, 2009
Filed:
Jul 21, 2005
Appl. No.:
11/188226
Inventors:
David Z. Ting - Arcadia CA, US
Cory J. Hill - Pasadena CA, US
Sumith V. Bandara - Stevenson Ranch CA, US
Sarath D. Gunapala - Stevenson Ranch CA, US
Assignee:
The United States of America as represented by the Administrator of the National Aeronautics and Space Administration - Washington DC
International Classification:
G01J 3/28
US Classification:
356326
Abstract:
The present invention is directed to methods of photonic crystal formation, and to methods and apparatus for using such photonic crystals, particularly in conjunction with detector arrays. Photonic crystal parameters and detector array parameters are compared to optimize the selection and orientation of a photonic crystal shape. A photonic crystal is operatively positioned relative to a plurality of light sensors. The light sensors can be separated by a pitch distance and positioned within one half of the pitch distance of an exit surface of the photonic crystals.

Nbn And Pbp Infrared Detectors With Graded Barrier Layer, Graded Absorption Layer, Or Chirped Strained Layer Super Lattice Absorption Layer

US Patent:
7737411, Jun 15, 2010
Filed:
Oct 10, 2008
Appl. No.:
12/249749
Inventors:
Sarath D. Gunapala - Stevenson Ranch CA, US
David Z. Ting - Arcadia CA, US
Cory J. Hill - Pasadena CA, US
Sumith V. Bandara - Burke CA, US
Assignee:
California Institute of Technology - Pasadena CA
International Classification:
H01L 27/14
G01T 1/24
US Classification:
25037012, 25037001
Abstract:
An nBn detector is described where for some embodiments the barrier layer has a concentration gradient, for some embodiments the absorption layer has a concentration gradient, and for some embodiments the absorption layer is a chirped strained layer super lattice. The use of a graded barrier or absorption layer, or the use of a chirped strained layer super lattice for the absorption layer, allows for design of the energy bands so that the valence band may be aligned across the device. Other embodiments are described and claimed.

Barrier Infrared Detector

US Patent:
8217480, Jul 10, 2012
Filed:
Aug 3, 2011
Appl. No.:
13/197588
Inventors:
David Z. Ting - Arcadia CA, US
Arezou Khoshakhlagh - Pasadena CA, US
Alexander Soibel - South Pasadena CA, US
Cory J. Hill - Chesterfield MO, US
Sarath D. Gunapala - Stevenson Ranch CA, US
Assignee:
California Institute of Technology - Pasadena CA
International Classification:
H01L 27/14
US Classification:
257431, 257 15, 257E31001
Abstract:
A superlattice-based infrared absorber and the matching electron-blocking and hole-blocking unipolar barriers, absorbers and barriers with graded band gaps, high-performance infrared detectors, and methods of manufacturing such devices are provided herein. The infrared absorber material is made from a superlattice (periodic structure) where each period consists of two or more layers of InAs, InSb, InSbAs, or InGaAs. The layer widths and alloy compositions are chosen to yield the desired energy band gap, absorption strength, and strain balance for the particular application. Furthermore, the periodicity of the superlattice can be “chirped” (varied) to create a material with a graded or varying energy band gap. The superlattice based barrier infrared detectors described and demonstrated herein have spectral ranges covering the entire 3-5 micron atmospheric transmission window, excellent dark current characteristics operating at least 150K, high yield, and have the potential for high-operability, high-uniformity focal plane arrays.

Complementary Barrier Infrared Detector (Cbird)

US Patent:
8368051, Feb 5, 2013
Filed:
Jul 10, 2009
Appl. No.:
12/501167
Inventors:
David Z. Ting - Arcadia CA, US
Sumith V. Bandara - Burke VA, US
Cory J. Hill - Pasadena CA, US
Sarath D. Gunapala - Stevenson Ranch CA, US
Assignee:
California Institute of Technology - Pasadena CA
International Classification:
H01L 31/00
US Classification:
257 21, 257 22, 257E31032, 257E31033
Abstract:
An infrared detector having a hole barrier region adjacent to one side of an absorber region, an electron barrier region adjacent to the other side of the absorber region, and a semiconductor adjacent to the electron barrier.

Multi-Quantum-Well Infrared Sensor Array In Spatially-Separated Multi-Band Configuration

US Patent:
2002011, Aug 29, 2002
Filed:
Dec 3, 2001
Appl. No.:
10/005170
Inventors:
Sumith Bandara - Stevenson Ranch CA, US
Sarath Gunapala - Stevenson Ranch CA, US
David Ting - Arcadia CA, US
John Liu - Pasadena CA, US
International Classification:
H01L031/0336
US Classification:
257/014000
Abstract:
Device designs and techniques for forming multiple-band quantum-well detectors.

Possible Relatives

Daniel K Ting  Daphne T Ting  Eric Ting  Eryi Y Ting  Eva L Ting  Frank K Ting  Grace Y Ting  David Last  David W Johnson  David Stamps 

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