David Elliott Sallows, 752642 SE Erickson Dr, Fort Pierce, FL 34984

7176417, Feb 13, 2007

Nov 15, 2001

09/998801

Kristian E. Johnsgard - Los Gatos CA, US
Daniel L. Messineo - San Jose CA, US
David E. Sallows - Union City CA, US

Mattson Technology, Inc. - Fremont CA

H05B 3/68

2194441, 2194681, 219543, 219552, 338 225, 338308

A resistive heater having a doped ceramic heating element embedded either partially or completely within a matrix of undoped ceramic material. The ceramic may be silicon carbide, and the dopant may be nitrogen. Many of the advantages of the present heater stern from the fact that the materials used for the heating elements and the matrix material surrounding those elements have substantially the same coefficient of thermal expansion. In one embodiment, the heater is a monolithic plate that is compact, strong, robust, and low in thermal mass, allowing it to respond quickly to power input variations. The resistive heater may be used in many of the reactors and processing chambers used to fabricate integrated circuits, such as those that deposit epitaxial films, and carry out rapid thermal processing.

2003012, Jul 3, 2003

Apr 10, 2002

10/120186

Kristian Johnsgard - Los Gatos CA, US
David Sallows - Union City CA, US
Daniel Messineo - San Jose CA, US
Robert Mailho - Sonora CA, US
Mark Johnsgard - Campbell CA, US

C30B001/00
H01L021/20
H01L021/36
C23C016/00

438/482000, 438/488000, 118/715000, 118/725000, 118/728000, 118/729000

Systems and methods for epitaxial deposition. The reactor includes a hot wall process cavity enclosed by a heater system, a thermal insulation system, and chamber walls. The walls of the process cavity may comprises a material having a substantially similar coefficient thermal expansion as the semiconductor substrate, such as quartz and silicon carbide, and may include an isothermal or near isothermal cavity that may be heated to temperatures as high as 1200 degrees C. Process gases may be injected through a plurality of ports, and are capable of achieving a fine level of distribution control of the gas components, including the film source gas, dopant source gas, and carrier gas. The gas supply system includes additional methods of delivering gas to the process cavity, such as through temperature measurement devices, and through a showerhead. In one embodiment of the present invention, the system is capable of utilizing silane as a silicon source gas. In another embodiment of the present invention, the lift pin mechanism that raises a substrate off a susceptor is capable of rotating with the susceptor during processing.

2005013, Jun 23, 2005

Nov 24, 2004

10/996955

Kristian Johnsgard - Los Gatos CA, US
David Sallows - Union City CA, US
Daniel Messineo - San Jose CA, US
Robert Mailho - Sonora CA, US
Mark Johnsgard - Campbell CA, US

C23F001/00

156345330

Systems and methods for epitaxial deposition. The reactor includes a hot wall process cavity enclosed by a heater system, a thermal insulation system, and chamber walls. The walls of the process cavity may comprises a material having a substantially similar coefficient thermal expansion as the semiconductor substrate, such as quartz and silicon carbide, and may include an isothermal or near isothermal cavity that may be heated to temperatures as high as degrees C. Process gases may be injected through a plurality of ports, and are capable of achieving a fine level of distribution control of the gas components, including the film source gas, dopant source gas, and carrier gas. The gas supply system includes additional methods of delivering gas to the process cavity, such as through temperature measurement devices, and through a showerhead. In one embodiment of the present invention, the system is capable of utilizing silane as a silicon source gas. In another embodiment of the present inventions the lift pin mechanism that raises a substrate off a susceptor is capable of rotating with the susceptor during processing.