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David F Witman, 7223 Burts Path, East Fishkill, NY 12533

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23 Burts Path, Hopewell Junction, NY 12533   

East Fishkill, NY   

Houlton, ME   

Ogunquit, ME   

Beacon, NY   

Pleasantville, NY   

Fishkill, NY   

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David F Witman

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Position: Private Household Service Occupations

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Degree: High school graduate or higher

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David Witman

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Us Patents

Method For Forming A Pattern Of A Photoresist

US Patent:
5098816, Mar 24, 1992
Filed:
Apr 11, 1991
Appl. No.:
7/683778
Inventors:
Edward D. Babich - Chappaqua NY
Jeffrey D. Gelorme - Plainville CT
Michael Hatzakis - Chappaqua NY
Jane M. Shaw - Ridgefield CT
Kevin J. Stewart - Lake Peekskill NY
David F. Witman - Pleasantville NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G03F 7075
G03F 726
US Classification:
430325
Abstract:
An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: ##STR1## wherein X is CH. dbd. CH. sub. 2 or --(--CH. sub. 2 --)--. sub. n O--(--R) with R being H or ##STR2## wherein each R. sup. I, R. sup. II and R. sup. III individually is selected from the group of alkyl, alkenyl, aryl, ##STR3## wherein each R. sup. IV, R. sup. V and R. sup. VI individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.

Simultaneous Multiple Level Interconnection Process

US Patent:
4840923, Jun 20, 1989
Filed:
Oct 19, 1988
Appl. No.:
7/262208
Inventors:
Donis G. Flagello - Ridgefield CT
Janusz S. Wilczynski - Ossining NY
David F. Witman - Pleasantville NY
Assignee:
International Business Machine Corporation - Armonk NY
International Classification:
H01L 21312
US Classification:
437189
Abstract:
A system of establishing a conductive via path between spaced interlevel conductors. Successive layers of metallization separated by a dielectric are built. The vias are opened in one step to eliminate interlevel mashing. The system employs annular pads at locations where contact may be established to another wiring level. The vias are self-aligned and taper from top metal to first level contact. The system is applicable both chip-wise and carrier-wise.

Laser Beam Homogenizer

US Patent:
4744615, May 17, 1988
Filed:
Jan 29, 1986
Appl. No.:
6/823554
Inventors:
Bunsen Fan - Peekskill NY
Raymond E. Tibbetts - Mahopac NY
Janusz S. Wilczynski - Ossining NY
David F. Witman - Ossining NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G02B 600
H01S 310
F21V 704
US Classification:
350 9610
Abstract:
A coherent laser beam having a possibly non-uniform spatial intensity distribution is transformed into an incoherent light beam having a substantially uniform spatial intensity distribution by homogenizing the laser beam with a light tunnel (a transparent light passageway having flat internally reflective side surfaces). It has been determined that when the cross-section of the tunnel is a polygon (as preferred) and the sides of the tunnel are all parallel to the axis of the tunnel (as preferred), the laser light at the exit of the light tunnel (or alternatively at any image plane with respect thereto) will have a substantially uniform intensity distribution and will be incoherent only when the aspect ratio of the tunnel (length divided by width) equals or exceeds the contangent of the input beam divergence angle. theta. and when W. sub. min =L. sub. coh (R+(1+R. sup. 2). sup.

Multi-Layer Thin Film Structure And Parallel Processing Method For Fabricating Same

US Patent:
5258236, Nov 2, 1993
Filed:
May 3, 1991
Appl. No.:
7/695368
Inventors:
Gnanalingam Arjavalingam - Yorktown Heights NY
Alina Deutsch - Chappaqua NY
Fuad E. Doany - Katonah NY
Bruce K. Furman - Beacon NY
Donald J. Hunt - Pine Bush NY
Chandrasekhar Narayan - Hopewell Junction NY
Modest M. Oprysko - Mahopac NY
Sampath Purushothaman - Yorktown Heights NY
Vincent Ranieri - Tarrytown NY
Stephen Renick - Mahopac NY
Jane M. Shaw - Ridgefield CT
Janusz S. Wilczynski - Ossining NY
David F. Witman - Pleasantville NY
Assignee:
IBM Corporation - Armonk NY
International Classification:
B32B 1504
H01L 2912
US Classification:
428626
Abstract:
A method and apparatus for releasing a workpiece from a substrate including providing a substrate which is transparent to a predetermined wavelength of electromagnetic radiation; forming, on the substrate, a separation layer which degrades in response to the predetermined radiation; providing the workpiece on the separation layer; and directing the predetermined radiation at the separation layer through the transparent substrate so as to degrade the separation layer and to separate the workpiece from the substrate.

Method For Forming A Pattern

US Patent:
5110711, May 5, 1992
Filed:
Apr 11, 1991
Appl. No.:
7/683729
Inventors:
Edward D. Babich - Chappaqua NY
Jeffrey D. Gelorme - Plainville CT
Michael Hatzakis - Chappaqua NY
Jane M. Shaw - Ridgefield CT
Kevin J. Stewart - Lake Peekskill NY
David F. Witman - Pleasantville NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G03F 7075
G03F 726
US Classification:
430296
Abstract:
An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: ##STR1## wherein X is CH. dbd. CH. sub. 2 or --(--CH. sub. 2 --)--. sub. n O--(--R) with R being H or ##STR2## wherein each R. sup. I, R. sup. II and R. sup. III individually is selected from the group of alkyl, alkenyl, aryl, ##STR3## wherein each R. sup. IV, R. sup. V and R. sup. VI individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.

Multiple Density Mask And Fabrication Thereof

US Patent:
4770947, Sep 13, 1988
Filed:
Jan 2, 1987
Appl. No.:
7/000212
Inventors:
Donis G. Flagello - Ridgefield CT
Jane M. Shaw - Ridgefield CT
David F. Witman - Pleasantville NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
B32B 1500
US Classification:
428630
Abstract:
A multi-layer structure that includes a transparent dielectric substrate, a layer of a nickel-containing steel alloy, and a layer of copper and/or chrome.

Plasma-Resistant Polymeric Material, Preparation Thereof, And Use Thereof

US Patent:
4981909, Jan 1, 1991
Filed:
Sep 7, 1988
Appl. No.:
7/241281
Inventors:
Edward D. Babich - Ridgefield CT
Michael Hatzakis - Chappaqua NY
Scott L. Jacobs - Fishkill NY
Jane M. Shaw - Ridgefield CT
David F. Witman - Ossining NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G03C 842
B05D 304
C08F 842
US Classification:
525102
Abstract:
Plasma-resistant polymeric materials are prepared by reacting a polymeric material containing reactive hydrogen functional groups with a multifunctional organometallic material containing at least two functional groups which are reactive with the reactive hydrogen functional groups of the polymeric material, such as hexamethylcyclotrisilazane.

Ultraviolet Light Sensitive Photoinitiator Compositions, Use Thereof And Radiation Sensitive Compositions

US Patent:
5059512, Oct 22, 1991
Filed:
Oct 10, 1989
Appl. No.:
7/419047
Inventors:
Edward D. Babich - Chappaqua NY
Jeffrey D. Gelorme - Plainville CT
Michael Hatzakis - Chappaqua NY
Jane M. Shaw - Ridgefield CT
Kevin J. Stewart - Lake Peekskill NY
David F. Witman - Pleasantville NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G03F 7029
C08F 818
US Classification:
430280
Abstract:
An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: ##STR1## wherein X is CH. dbd. CH. sub. 2 or --(--CH. sub. 2 --)--. sub. n O--(--R) with R being H or ##STR2## wherein each R. sup. I, R. sup. II and R. sup. III individually is selected from the group of alkyl, alkenyl, aryl, ##STR3## wherein each R. sup. IV, R. sup. V and R. sup. VI individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.

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