Dejan C Jovanovic, 594737 N Winchester Ave UNIT 3N, Chicago, IL 60640

7160769, Jan 9, 2007

Oct 20, 2004

10/969108

Ted R. White - Austin TX, US
Alexander L. Barr - Crolles, FR
Dejan Jovanovic - Austin TX, US
Mariam G. Sadaka - Austin TX, US

Freescale Semiconductor, Inc. - Austin TX

H01L 21/336
H01L 29/78

438198, 438199, 438275, 257369, 257E21409, 257E29255

P channel transistors are formed in a semiconductor layer that has a (110) surface orientation for enhancing P channel transistor performance, and the N channel transistors are formed in a semiconductor layer that has a (100) surface orientation. To further provide P channel transistor performance enhancement, the direction of their channel lengths is selected based on their channel direction. The narrow width P channel transistors are preferably oriented in the direction. The wide channel width P channel transistors are preferably oriented in the direction.

7205210, Apr 17, 2007

Feb 17, 2004

10/780143

Alexander L. Barr - Crolles, FR
Dejan Jovanovic - Austin TX, US
Mariam G. Sadaka - Austin TX, US
Ted R. White - Austin TX, US

Freescale Semiconductor, Inc. - Austin TX

H01L 21/30
H01L 21/46

438455, 257E21122

A first semiconductor structure has a silicon substrate, a first silicon germanium layer grown on the silicon, a second silicon germanium layer on the first silicon germanium layer, and a strained silicon layer on the second silicon germanium layer. A second semiconductor structure has a silicon substrate and an insulating top layer. The silicon layer of the first semiconductor structure is bonded to the insulator layer to form a third semiconductor structure. The second silicon germanium layer is cut to separate most of the first semiconductor structure from the third semiconductor structure. The silicon germanium layer is removed to expose the strained silicon layer where transistors are subsequently formed, which is then the only layer remaining from the first semiconductor structure. The transistors are oriented along the direction and at a 45 degree angle to the direction of the base silicon layer of the second silicon.

7282402, Oct 16, 2007

Mar 30, 2005

11/093801

Mariam G. Sadaka - Austin TX, US
Alexander L. Barr - Crolles, FR
Dejan Jovanovic - Austin TX, US
Shawn G. Thomas - Gilbert AZ, US
Ted R. White - Austin TX, US

Freescale Semiconductor, Inc. - Austin TX

H01L 21/8238
H01L 21/336

438221, 438197, 438199, 438230, 438202, 438258, 438303, 438207, 438218, 257E2163, 257E21631, 257E21632, 257E21633, 257E21634, 257E21635, 257E21636, 257E21637, 257E21638, 257E21639, 257E2164, 257E21641, 257E21642, 257E21643, 257E21644

According to the embodiments to the present disclosure, the process of making a dual strained channel semiconductor device includes integrating strained Si and compressed SiGe with trench isolation for achieving a simultaneous NMOS and PMOS performance enhancement. As described herein, the integration of NMOS and PMOS can be implemented in several ways to achieve NMOS and PMOS channels compatible with shallow trench isolation.

5593908, Jan 14, 1997

Jun 7, 1995

8/485249

Dejan Jovanovic - Dallas TX
John N. Randall - Richardson TX

Texas Instruments Incorporated - Dallas TX

H01L 21265
H01L 2120

437 40

A resonant tunneling transistor (400) with lateral carrier transport through tunneling barriers (404, 408) grown as a refilling of trenches etched partially into a transverse quantum well (410) and defining a quantum wire or quantum dot (406). The fabrication methods include use of angled deposition to create overhangs at the top of openings which define sublithographic separations for tunneling barrier locations.

5504347, Apr 2, 1996

Oct 17, 1994

8/323983

Dejan Jovanovic - Dallas TX
John N. Randall - Richardson TX

Texas Instruments Incorporated - Dallas TX

H01L 2906

257 25

A resonant tunneling transistor (400) with lateral carrier transport through tunneling barriers (404, 408) grown as a refilling of trenches etched partially into a transverse quantum well (410) and defining a quantum wire or quantum dot (406). The fabrication methods include use of angled deposition to create overhangs at the top of openings which define sublithographic separations for tunneling barrier locations.

2016037, Dec 22, 2016

Jun 19, 2015

14/745325

Dejan Jovanovic - Austin TX, US
Keith Beardmore - Santa Fe NM, US
Kari Myllykoski - Austin TX, US
Mark O. Freeman - Snohomish WA, US

G06T 7/60
G06K 9/52
G06K 9/62
G06T 7/40
G06K 9/46
G06T 7/00
H04N 7/18
G06T 5/00

A Quantified Image Measurement System that creates accurate physical measurement data from digital pictures is disclosed. The system can use any image format and enhances the image file with measurement data and data transformation information that enables the creation of any type of geometrical or dimensional measurement from the stored photograph. This file containing the original digital image along with the supplemental data is referred to as a Quantified Image File or QIF. The QIF can be shared with other systems via email, cloud syncing or other types of sharing technology. Once shared, existing systems such as CAD applications or web/cloud servers can use the QIF and the associated QIF processing software routines to extract physical measurement data and use the data for subsequent processing or building geometrically accurate models of the objects or scene in the image. Additionally smart phones and other portable devices can use the QIF to make measurements on the spot or share between portable devices. In addition, the quantified image measurement system of this invention eliminates the need for capturing the image from any particular viewpoint by using multiple reference points and software algorithms to correct for any off-angle distortions.

2016026, Sep 8, 2016

Mar 5, 2015

14/639912

Dejan JOVANOVIC - Austin TX, US
Keith Beardmore - Santa Fe NM, US
Kari Myllykoski - Austin TX, US
James H. Grotelueschen - Glen Ellyn WA, US
Mark O. Freeman - Snohomish WA, US

G06T 17/20
G06T 7/20
G06T 7/00
H04N 13/02

Method and System for 3D capture based on SFM with simplified pose detection is disclosed. This invention provides a straightforward method to directly track the camera's motion (pose detection) thereby removing a substantial portion of the computing load needed to build the 3D model from a sequence of images.

2016013, May 12, 2016

Nov 12, 2014

14/539924

Dejan Jovanovic - Austin TX, US
Keith Beardmore - Santa Fe NM, US
Kari Myllykoski - Austin TX, US
Mark O. Freeman - Snohomish WA, US

H04N 13/02
H04N 13/00

3D Modeling System and Apparatus for mobile devices with limited processing capability is disclosed. This invention uses the standard camera and computing resources available on consumer mobile devices such as smart phones. A light projector (e.g. laser line generator) is attached as an accessory to the mobile device or built as a part of the mobile device. Processing requirements are significantly reduced by including known object(s) or reference template(s) in the scene to be captured which are used to determine the pose/position of the camera relative to the object or scene to be modeled in a series of camera pose/position sequences. The position/pose of the camera and projector for each sequence is facilitated by image distortions of known dimensions of reference template or known object in a sequence of captured images.