Diana L Huffaker, 59Grapevine, TX

7288423, Oct 30, 2007

Jan 6, 2006

11/326433

Diana L. Huffaker - Albuquerque NM, US

STC.UNM - Albuquerque NM

H01L 21/00

438 46, 438483, 257E2109, 257E21108, 257E21109

A method for removing a mask in a selective area epitaxy process is provided. The method includes forming a first layer on a substrate and oxidizing the first layer. A patterned photoresist can be formed on the oxidized first layer. A portion of the oxidized first layer can then be removed using a wet chemical etch to form a mask. After removing the patterned photoresist a second layer can be epitaxially grown in a metal organic chemical vapor deposition (MOCVD) chamber or a chemical beam epitaxy (CBE) chamber on a portion of the first layer exposed by the mask. The mask can then be removed the mask in the MOCVD/MBE chamber. The disclosed in-situ mask removal method minimizes both the atmospheric exposure of a growth surface and the number of sample transfers.

7432175, Oct 7, 2008

Jan 6, 2006

11/326432

Diana L. Huffaker - Albuquerque NM, US
Larry R. Dawson - Albuquerque NM, US
Ganesh Balakrishnan - Albuquerque NM, US

H01L 21/20
H01L 21/36

438479, 438962, 257E29071, 977774

Lattice mismatched epitaxy and methods for lattice mismatched epitaxy are provided. The method includes providing a growth substrate and forming a plurality of quantum dots, such as, for example, AlSb quantum dots, on the growth substrate. The method further includes forming a crystallographic nucleation layer by growth and coalescence of the plurality of quantum dots, wherein the nucleation layer is essentially free from vertically propagating defects. The method using quantum dots can be used to overcome the restraints of critical thickness in lattice mismatched epitaxy to allow effective integration of various existing substrate technologies with device technologies.

7700395, Apr 20, 2010

Jan 11, 2007

11/622306

Diana L. Huffaker - Albuquerque NM, US
Larry R. Dawson - Albuquerque NM, US
Ganesh Balakrishnan - Albuquerque NM, US

STC.UNM - Albuquerque NM

H01L 21/00

438 46, 438455, 438457

Exemplary embodiments provide a semiconductor fabrication method including a combination of monolithic integration techniques with wafer bonding techniques. The resulting semiconductor devices can be used in a wide variety of opto-electronic and/or electronic applications such as lasers, light emitting diodes (LEDs), phototvoltaics, photodetectors and transistors. In an exemplary embodiment, the semiconductor device can be formed by first forming an active-device structure including an active-device section disposed on a thinned III-V substrate. The active-device section can include OP and/or EP VCSEL devices. A high-quality monolithic integration structure can then be formed with low defect density through an interfacial misfit dislocation. In the high-quality monolithic integration structure, a thinned III-V mating layer can be formed over a silicon substrate. The thinned III-V substrate of the active-device structure can subsequently be wafer-bonded onto the thinned III-V mating layer of the high-quality monolithic integration structure forming an optoelectronic semiconductor device on silicon.

7795609, Sep 14, 2010

Aug 7, 2006

11/462777

Diana L. Huffaker - Albuquerque NM, US
Noppadon Nuntawong - Albuquerque NM, US

STC.UNM - Albuquerque NM

H01L 29/66

257 14, 257 15, 257 17, 257 18, 257 22, 257E29071, 257E29192, 257E2934, 257E33005, 257E33008

Embodiments provide a quantum dot active structure and a methodology for its fabrication. The quantum dot active structure includes a substrate, a plurality of alternating regions of a quantum dot active region and a strain-compensation region, and a cap layer. The strain-compensation region is formed to eliminate the compressive strain of an adjacent quantum dot active region, thus allowing quantum dot active regions to be densely-stacked. The densely-stacked quantum dot active region provides increased optical modal gain for semiconductor light emitting devices such as edge emitting lasers, vertical cavity lasers, detectors, micro-cavity emitters, optical amplifiers or modulators.

8410523, Apr 2, 2013

Dec 10, 2008

12/332014

Diana L. Huffaker - Albuquerque NM, US
Larry R. Dawson - Albuquerque NM, US
Ganesh Balakrishnan - Albuquerque NM, US

H01L 21/02

257190, 257 12, 257 13, 257 14, 257 80, 257 83, 257 94, 257 98, 257103, 257200, 257201, 257615, 257E21097, 257E21098, 257E21108, 257E21109, 257E21112, 257E21125, 257E21126, 257E21127

Exemplary embodiments provide high-quality layered semiconductor devices and methods for their fabrication. The high-quality layered semiconductor device can be formed in planar with low defect densities and with strain relieved through a plurality of arrays of misfit dislocations formed at the interface of highly lattice-mismatched layers of the device. The high-quality layered semiconductor device can be formed using various materials systems and can be incorporated into various opto-electronic and electronic devices. In an exemplary embodiment, an emitter device can include monolithic quantum well (QW) lasers directly disposed on a SOI or silicon substrate for waveguide coupled integration. In another exemplary embodiment, a superlattice (SL) photodetector and its focal plane array can include a III-Sb active region formed over a large GaAs substrate using SLS technologies.

2007016, Jul 12, 2007

Jan 11, 2007

11/622262

Diana Huffaker - Albuquerque NM, US
Larry Dawson - Albuquerque NM, US
Ganesh Balakrishnan - Albuquerque NM, US

H01S 5/00

372045010

Exemplary embodiments provide high-quality layered semiconductor devices and methods for their fabrication. The high-quality layered semiconductor device can be formed in planar with low defect densities and with strain relieved through a plurality of arrays of misfit dislocations formed at the interface of highly lattice-mismatched layers of the device. The high-quality layered semiconductor device can be formed using various materials systems and can be incorporated into various opto-electronic and electronic devices. In an exemplary embodiment, a vertical cavity device can include two types of arrays of misfit dislocations to form high-quality semiconductor layers of the vertical cavity device. The vertical cavity device can be operated at a wavelength of about 1.6-5.0 μm.

2013032, Dec 12, 2013

Mar 1, 2012

14/002078

Joshua Shapiro - Los Angeles CA, US
Diana Huffaker - Los Angeles CA, US

The Regents of the University of California - Oakland CA

H01L 29/66
H01L 21/02

257 14, 438478, 977762

An axially hetero-structured nanowire includes a first segment that includes GaAs, and a second segment integral with the first that includes InGaAs. The parameter x has a maximum value x-max within the second segment that is at least 0.02 and less than 0.5. A nanostructured semiconductor component includes a GaAs (111)B substrate, and a plurality of nanopillars integral with the substrate at an end thereof. Each of the plurality of nanopillars can be a nanowire according to an embodiment of the current invention. A method of producing axially hetero-structured nanowires is also provided.

2014028, Sep 25, 2014

Nov 4, 2013

14/071283

- Oakland CA, US
Diana Huffaker - Los Angeles CA, US

The Regents of the University of California - Oakland CA

H01S 5/10
H01S 5/30

372 4301, 438 22

A nanopillar photonic crystal laser includes a plurality of nanopillars and a support structure in contact with at least a portion of each of the nanopillars. Each nanopillar has an axial dimension and two mutually orthogonal cross dimensions. The axial dimension of each of the nanopillars is greater than the two mutually orthogonal cross dimensions, where there mutually orthogonal cross dimensions are less than about 1 μm and greater than about 1 nm. The support structure holds the plurality of nanopillars in preselected relative orientations and displacements relative to each other to form an array pattern that confines light of a preselected wavelength to a resonance region that intercepts at least one nanopillar of the plurality of nanopillars. The at least one nanopillar includes a lasing material to provide an output laser beam of light at the preselected wavelength.