William D Simmons, 687741 Church St, Gilroy, CA 95020

2012032, Dec 27, 2012

Jun 21, 2011

13/165666

William Davis Simmons - Gilroy CA, US
Vadim Piskun - San Jose CA, US

BROADCOM CORPORATION - Irvine CA

H01Q 3/24

343876

Provided is a sectorized antenna. For example, there is a sectorized antenna including a plurality of antenna elements situated radially around a central axis, where each of the plurality of antenna elements corresponds to at least one of another plurality of sectors of the antenna. A first switch of the sectorized antenna is configured to selectively couple a first transceiver circuit to each antenna element in a first group of the plurality of antenna elements, where the selective coupling provides a configurable directionality for the antenna.

4764935, Aug 16, 1988

Apr 6, 1987

7/035108

Jaroslava Z. Wilcox - Los Angeles CA
Michael Jansen - Los Angeles CA
Arnold H. Silver - Rancho Palos Verdes CA
Jane J. J. Yang - Los Angeles CA
William W. Simmons - Rancho Palos Verdes CA

TRW Inc. - Redondo Beach CA

H01S 319

372 50

A diffraction-coupled semiconductor laser array, and a related method for its operation, the array structure having a diffraction section that is electrically controllable independently of a waveguide section having multiple laser channels. Above a critical level of injected gain in the diffraction region, and with appropriate selection of channel and diffraction region dimensions, stable operation in the in-phase supermode results, with adjacent lasers operating in phase and a single-lobed far-field distribution pattern being produced. Below the critical level of injected gain, the out-of-phase supermode or multimode operation is favored and the narrow single peak of the far-field pattern is no longer present. This mode switching can be used to rapidly modulate operation of the array without directly switching it on and off.

5113804, May 19, 1992

Feb 4, 1991

7/650766

Greg A. Kraus - Long Beach CA
William R. Simmons - Rancho Palos Verdes CA
Mark R. J. Wells - Bakersfield CA

Advanced Combustion Technology, Inc. - Gardena CA

F02B 4304
F02B 4704

123 1A

An apparatus and method for enhancing the efficiency of a combustion process and thereby reducing undesirable emissions in which a solid combustion enhancing substance is converted into a highly dispersed, gas-transportable state at a controlled rate and is subsequently conveyed into the zone of combustion. The use of a substance in its solid state eases handling and avails highly effective materials for combustion and enhancement while the necessary conversion of the substance from one state to another enables a high degree of control as to its rate of addition to the combustion process. The substance's highly dispersed state when it enters the combustion process maximizes its effect.

4869780, Sep 26, 1989

Apr 7, 1988

7/178711

Jane J. J. Yang - Los Angeles CA
William W. Simmons - Rancho Palos Verdes CA
Michael Jansen - Los Angeles CA
Jaroslava Z. Wilcox - Los Angeles CA
Moshe Sergant - Culver City CA

TRW Inc. - Redondo Beach CA

H01L 21306
B44C 122
C03C 1500
C03C 2506

156643

An ion milling method is disclosed that provides a manufacturing technique for mass producing microscopic surface features using a wide variety of media that includes semiconductors, metals, and glasses. In the preferred embodiment, vertical and 45 degree mirrors are formed simultaneously in semiconductor laser diodes in order to produce monolithic two dimensional arrays of surface emitting lasers. Standard double heterostructure semiconductor laser diodes are first grown on a wafer using metalorganic chemical vapor deposition techniques. An ion milling gun is oriented at a particular angle from the longitudinal axis of the active layer of the laser and emits a stream of atomic particles toward the lasers producing a generally two sided cut or notch that extends downward from the top surface of the semiconductor laser and traverses the active layer. The two sides of the cut consist of a vertical face that is perpendicular to the active layer and an inclined mirror surface that connects to the bottom of the vertical face and the slopes back upward to the top of the laser. Although the preferred utilization of this invention is the production of high power semiconductor laser arrays and subsequent wafer scale integration, the ion milling technique may be employed to construct a wide variety of micro-miniature radiation interfaces, reflectors, transmitters, or absorbers.

D288362, Feb 17, 1987

Feb 17, 1984

6/581307

William Simmons - Westminster CA

D24 47

4185542, Jan 29, 1980

Feb 27, 1978

5/881764

Ray A. York - Villa Park CA
William D. Simmons - Costa Mesa CA

Bertea Corporation - Irvine CA

F16J 1516
F16J 1102

92166

An actuator comprising a housing, a piston movable in the housing, a rod coupled to the piston and movable therewith, and a tubular member mounted in the housing and having a rod extending therethrough. A frangible section retains the tubular member against axial inward movement from a first position in the housing. When an axial inward force of at least a predetermined magnitude is applied to the tubular member, the frangible section ruptures to allow at least a portion of the tubular member to move axially inwardly. Armor is provided for protecting at least a portion of the housing.

5467214, Nov 14, 1995

Nov 12, 1993

8/152647

Lee O. Heflinger - Torrance CA
William W. Simmons - Rancho Palos Verdes CA
Randall J. St. Pierre - Santa Monica CA
Hagop Injeyan - Glendale CA

TRW Inc. - Redondo Beach CA

H01S 310
G01J 120

359238

Apparatus and a related method for generating a second harmonic frequency optical output from a fundamental frequency input beam, without significant birefringence. The apparatus includes two Type II doubler crystals of equal length arranged with their corresponding axes parallel to each other, and a polarization rotator positioned between the doubler crystals, to rotate the polarization angle of a residual fundamental frequency component of an output beam from one of the crystals by 90. degree. or an odd multiple of 90. degree. Random birefringence introduced into one of the doubler crystals is virtually canceled in the other, and the assembly of the two crystals and the polarization rotator may be angularly adjusted as needed for phase matching or tuning, without detracting from the birefringence compensation capability. The invention is also disclosed in the context of a phase conjugated master oscillator power amplifier (PC MOPA) system.

D287767, Jan 13, 1987

Feb 17, 1984

6/581306

William Simmons - Westminster CA

D24 47