Douglas Benoit resumes & CV records
Resumes
Douglas Benoit
Douglas Benoit
Douglas Benoit
Douglas C Benoit, 81Daytona Beach, FL
Douglas Benoit Phones & Addresses
South Daytona, FL
Vergennes, VT
New Smyrna Beach, FL
800 Boston Ave, South Daytona, FL 32119
Mentions for Douglas C Benoit
Publications & IP owners
Us Patents
Pattern Density Tailoring For Etching Of Advanced Lithographic Mask
US Patent:
6365326, Apr 2, 2002
Filed:
May 7, 1999
Appl. No.:
09/307126
Inventors:
Maheswaran Surendra - Croton-on-Hudson NY
Douglas E. Benoit - South Burlington VT
Cameron J. Brooks - South Burlington VT
Douglas E. Benoit - South Burlington VT
Cameron J. Brooks - South Burlington VT
Assignee:
International Business Machines Corporation - Armonk NY
Lockheed Martin Corporation - Manassas VA
Lockheed Martin Corporation - Manassas VA
International Classification:
G03C 500
US Classification:
430313, 430 5, 430318
Abstract:
A method of preparing an x-ray mask comprising providing a substrate, and applying sequentially to a surface of the substrate i) an etch stop layer resistant to etchant for an x-ray absorber, and ii) an x-ray absorber layer. The method then includes removing a portion of the substrate below the layers to create an active region of the substrate above the removed portion of the substrate and an inactive region over remaining portions of the substrate, applying a resist layer above the absorber layer, and exposing a portion of the resist layer using electron beam irradiation and developing the resist layer to form a latent mask image over the active region of the substrate. The method then includes removing the exposed portion of the resist layer to leave a resist layer mask image over the active region of the substrate, and etching the absorber layer to leave an absorber layer mask image over the designated active region of the substrate while simultaneously removing the absorber layer from the inactive region to form, for example, an x-ray mask, on the substrate.
Pattern Density Tailoring For Etching Of Advanced Lithographic Masks
US Patent:
6521383, Feb 18, 2003
Filed:
Oct 17, 2001
Appl. No.:
09/981033
Inventors:
Maheswaran Surendra - Croton-on-Hudson NY
Douglas E. Benoit - South Burlington VT
Cameron J. Brooks - South Burlington VT
Douglas E. Benoit - South Burlington VT
Cameron J. Brooks - South Burlington VT
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G03F 900
US Classification:
430 5, 430313, 430318
Abstract:
A method of preparing an x-ray mask comprising providing a substrate, and applying sequentially to a surface of the substrate i) an etch stop layer resistant to etchant for an x-ray absorber, and ii) an x-ray absorber layer. The method then includes removing a portion of the substrate below the layers to create an active region of the substrate above the removed portion of the substrate and an inactive region over remaining portions of the substrate, applying a resist layer above the absorber layer, and exposing a portion of the resist layer using electron beam irradiation and developing the resist layer to form a latent mask image over the active region of the substrate. The method then includes removing the exposed portion of the resist layer to leave a resist layer mask image over the active region of the substrate, and etching the absorber layer to leave an absorber layer mask image over the designated active region of the substrate while simultaneously removing the absorber layer from the inactive region to form, for example, an x-ray mask, on the substrate.
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