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Douglas L Keil, 661062 Meek Way, West Linn, OR 97068

Known as:
Douglas Leonard Keil Doug L Keil Doulas Keil Keil Doulas
Related to:
Ping-Chih Keil 65

Douglas Keil Phones & Addresses

1062 Meek Way, West Linn, OR 97068    503-6562592    503-6562592   

34421 Montgomery Pl, Fremont, CA 94555    510-8942510   

Rohnert Park, CA   

Lake Forest, IL   

Madison, WI   

Clackamas, OR   

Alameda, CA   

1062 Meek Way, West Linn, OR 97068   

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Douglas L Keil

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Position: Production Occupations

Education

Degree: Graduate or professional degree
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Douglas Keil - Lawyer

Office:
Thomas, Thomas & Hafer LLP
Specialties:
General Liability
ISLN:
922833817
Admitted:
2013
University:
University of Pittsburgh, B.A., 2009; University of Pittsburgh School of Law
Law School:
University of Louisville Brandeis School of Law, J.D., 2013

Douglas Keil resumes & CV records

Resumes

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Douglas Keil

Publications & IP owners

Us Patents

Profile Control Of Oxide Trench Features For Dual Damascene Applications

US Patent:
6540885, Apr 1, 2003
Filed:
Mar 28, 2001
Appl. No.:
09/821427
Inventors:
Douglas Keil - Fremont CA
Eric Wagganer - Milpitas CA
Bryan A. Helmer - Fremont CA
Assignee:
Lam Research Corp. - Fremont CA
International Classification:
C23C 1400
US Classification:
20419233, 20419235, 216 38, 216 39, 216 59, 216 67
Abstract:
Methods for etching a trench into a dielectric layer are provided. One exemplary method controls an ion-to-neutral flux ratio during etching so as to achieve a neutral limited regime in an ion assisted etch mechanism where the neutral limited regime causes bottom rounding. The method includes modulating physical sputtering causing microtrenching to offset the bottom rounding so as to produce a substantially flat bottom trench profile. Some notable advantages of the discussed methods of etching a trench into a dielectric layer includes the ability to eliminate the intermediate etch stop layer. Elimination of the etch stop layer will decrease fabrication cost and process time. Additionally, the elimination of the intermediate stop layer will improve device performance.

Plasma Etching Of Organic Antireflective Coating

US Patent:
6630407, Oct 7, 2003
Filed:
Mar 30, 2001
Appl. No.:
09/820689
Inventors:
Douglas Keil - Fremont CA
Jim Bowers - Brookfield CT
Eric Wagganer - Milpitas CA
Rao Annapragada - Union City CA
Tri Le - Milpitas CA
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
H01L 21302
US Classification:
438717, 216 47
Abstract:
A semiconductor manufacturing process wherein an organic anti-reflective coating (ARC) is plasma etched with selectivity to an underlying dielectric layer and/or overlying photoresist. The etchant gas is fluorine-free and includes a carbon-containing gas such as CO gas, a nitrogen-containing gas such as N , an optional oxygen-containing gas such as O , and an optional inert carrier gas such as Ar. The etch rate of the ARC can be at least 10 times higher than that of the underlying layer. Using a combination of CO and O with N and a carrier gas such as Ar, it is possible to obtain dielectric:ARC selectivity of at least 10. The process is useful for etching contact or via openings in damascene and self-aligned contact or trench structures.

Post-Development Treatment Of Patterned Photoresist To Promote Cross-Linking Of Polymer Chains

US Patent:
6780569, Aug 24, 2004
Filed:
Feb 4, 2002
Appl. No.:
10/068282
Inventors:
Eric Hudson - Berkeley CA
Reza Sadjadi - Saratoga CA
Daxing Ren - Fremont CA
Wan-Lin Chen - Sunnyvale CA
Douglas Keil - Fremont CA
Peter Cirigliano - Sunnyvale CA
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
G03F 700
US Classification:
430313, 430311, 430330
Abstract:
A method for creating semiconductor devices is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. Polymers in the patterned photoresist layer are chemically cross-linked by exposure to at least one reactive chemical. The pattern in the photoresist layer is transferred to the wafer. A reaction chamber for processing a wafer with a patterned layer of photoresist material, wherein the photoresist material was patterned by exposing the photoresist material using light of a wavelength less than 248 nm is provided. A chamber is provided with a central cavity. A wafer support for supporting the wafer in the central cavity is provided. A cross-linking reactive chemical source in fluid contact with the chamber and which provides a reactive chemical which causes cross-linking of the photoresist is provided.

Plasma In-Situ Treatment Of Chemically Amplified Resist

US Patent:
7022611, Apr 4, 2006
Filed:
Apr 28, 2003
Appl. No.:
10/426043
Inventors:
Douglas L. Keil - Fremont CA, US
Wan-Lin Chen - Sunnyvale CA, US
Eric A. Hudson - Berkeley CA, US
S. M. Reza Sadjadi - Saratoga CA, US
Mark H. Wilcoxson - Piedmont CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
H01L 21/302
US Classification:
438706, 438705, 438709, 438710, 438725, 430296, 430313, 430328
Abstract:
A method for creating semiconductor devices by etching a layer over a wafer is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. The wafer is placed in a process chamber. The photoresist is hardened by providing a hardening plasma containing high energy electrons in the process chamber to harden the photoresist layer, wherein the high energy electrons have a density. The layer is etched within the process chamber with an etching plasma, where a density of high energy electrons in the etching plasma is less than the density of high energy electrons in the hardening plasma.

Apparatus For Measuring A Set Of Electrical Characteristics In A Plasma

US Patent:
7319316, Jan 15, 2008
Filed:
Jun 29, 2005
Appl. No.:
11/172014
Inventors:
Christopher Kimball - Fremont CA, US
Eric Hudson - Berkeley CA, US
Douglas Keil - Fremont CA, US
Alexei Marakhtanov - Albany CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
C02F 1/00
US Classification:
324 7676, 324 7611, 324 7665, 324 7667, 2504922, 356316
Abstract:
A probe apparatus configured to measure a set of electrical characteristics in a plasma processing chamber, the plasma processing chamber including a set of plasma chamber surfaces configured to be exposed to a plasma is disclosed. The probe apparatus includes a collection disk structure configured to be exposed to the plasma, whereby the collection disk structure is coplanar with at least one of the set of plasma chamber surfaces. The probe apparatus also includes a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers, wherein the set of electrical characteristics is generated by an ion flux of the plasma. The probe apparatus further includes an insulation barrier configured to substantially electrically separate the collection disk and the conductive path from the set of plasma chamber surfaces.

Plasma In-Situ Treatment Of Chemically Amplified Resist

US Patent:
7347915, Mar 25, 2008
Filed:
Jan 5, 2006
Appl. No.:
11/326934
Inventors:
Douglas L. Keil - Fremont CA, US
Wan-Lin Chen - Sunnyvale CA, US
Eric A. Hudson - Berkeley CA, US
S. M. Reza Sadjadi - Saratoga CA, US
Mark H. Wilcoxson - Piedmont CA, US
Assignee:
LAM Research Corporation - Fremont CA
International Classification:
H01L 21/00
US Classification:
15634547, 15634543
Abstract:
A method for creating semiconductor devices by etching a layer over a wafer is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. The wafer is placed in a process chamber. The photoresist is hardened by providing a hardening plasma containing high energy electrons in the process chamber to harden the photoresist layer, wherein the high energy electrons have a density. The layer is etched within the process chamber with an etching plasma, where a density of high energy electrons in the etching plasma is less than the density of high energy electrons in the hardening plasma.

Controlling Plasma Processing Using Parameters Derived Through The Use Of A Planar Ion Flux Probing Arrangement

US Patent:
7413672, Aug 19, 2008
Filed:
Apr 4, 2006
Appl. No.:
11/398306
Inventors:
Douglas L. Keil - Fremont CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
G01L 21/30
G01R 31/00
US Classification:
216 59
Abstract:
Methods and apparatus for detecting and/or deriving the absolute values of and/or the relative changes in parameters such as the plasma potential and the ion flux using a Planar Ion Flux (PIF) probing arrangement are disclosed. The detected and/or derived values are then employed to control plasma processing processes.

Magnetic Enhancement For Mechanical Confinement Of Plasma

US Patent:
7455748, Nov 25, 2008
Filed:
Jun 20, 2003
Appl. No.:
10/600191
Inventors:
Douglas L. Keil - Fremont CA, US
Lumin Li - Santa Clara CA, US
Eric A. Hudson - Berkeley CA, US
Reza Sadjadi - Saratoga CA, US
Eric H. Lenz - Pleasanton CA, US
Rajinder Dhindsa - San Jose CA, US
Ji Soo Kim - Pleasanton CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
C23F 1/00
H01L 21/306
C23C 16/00
US Classification:
15634546, 118723 E
Abstract:
A plasma processing apparatus for processing a substrate is provided. A plasma processing chamber with chamber walls is provided. A substrate support is provided within the chamber walls. At least one confinement ring is provided, where the confinement ring and the substrate support define a plasma volume. A magnetic source for generating a magnetic field for magnetically enhancing physical confinement provided by the at least one confinement ring is provided.

Amazon

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Barcats

Author:
Douglas Keil
Publisher:
CreateSpace Independent Publishing Platform
Binding:
Paperback
Pages:
432
ISBN #:
1495458164
EAN Code:
9781495458163
During the spontaneous act of saving the BarCats from certain death, Ethan meets and falls in love with Annie, a mysterious woman who is sentenced to prison while trying to protect her Mafia uncle. Ethan finds himself in the crosshairs of the Feds and the mob as he risks all to obtain the release of...
Douglas Keil Photo 13

Changing Toronto: Governing Urban Neoliberalism

Author:
Julie-Anne Boudreau, Roger Keil, Douglas Young
Publisher:
University of Toronto Press, Higher Education Division
Binding:
Paperback
Pages:
256
ISBN #:
1442600934
EAN Code:
9781442600935
By exploring the formative years of the New City of Toronto (between 1995 and 2005, the period just before, during, and after metropolitan amalgamation), Changing Toronto analyzes the political, social, and environmental challenges of living in, and governing, a major metropolitan city region that b...
Douglas Keil Photo 14

Dear Dad

Author:
Douglas Keil
Publisher:
CreateSpace Independent Publishing Platform
Binding:
Paperback
Pages:
216
ISBN #:
1522976760
EAN Code:
9781522976769
Realistic portrayal of an adolescent's journey through cancer treatment. This vivid story is told through the unfiltered voice of 14-year-old Dustin as letters to his dad. Emotional, inspiring and humorous, Dustin describes situational friendships, love/hate relationships with caregivers, strains on...

Possible Relatives

Cynthia A Keil  David M Keil  Dana E Keil  Daniel S Keil  Aaron M Keil  Danielle Keil  Diana Keil  Douglas P Johnson  Douglas R Stamps  Douglas J Standish 

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