Douglas L Peltzer Deceased23 Pheasant Ln, Laguna Beach, CA 92656

6093620, Jul 25, 2000

Aug 18, 1989

7/396733

Douglas L. Peltzer - Cupertino CA

National Semiconductor Corporation - Santa Clara CA

H01L 2176

438416

A thin silicon epitaxial layer, formed on a silicon substrate, is subdivided into electrically isolated pockets by a grid of oxidized regions of epitaxial silicon material which extend through the epitaxial layer to a laterally extending PN junction.

4836861, Jun 6, 1989

Apr 11, 1988

7/174635

Douglas L. Peltzer - Cupertino CA
Richard L. Bechtel - Sunnyvale CA
Wen C. Ko - San Jose CA
William T. Liggett - Hollister CA

Tactical Fabs, Inc. - San Jose CA

H01L 3106
H01L 3118

136246

A point contact solar cell structure and method of manufacturing which provides metal contact from positive and negative bus bars to alternating n-wells and p-wells in a solar cell crystal. The solar cell spans two side-by-side metal bus bars. On the bottom surface of the cell crystal two side-by-side perforated metal layers contact wells of only one conductivity type. Holes in the perforated metal layers are located beneath wells of the opposite conductivity type. An insulated junction between the two perforated metal layers is located directly above the junction between the two side-by-side metal bus bars. Fingers from the perforated metal layer above one bus bar reach across and down to contact the opposite bus bar. Metal lines also reach from the bus bars up through the holes in the perforated contact layers and contact wells within the crystal. This way, all n-wells and p-wells have electrical contact to their respective bus bars.