Evelyn Yifang Hu, 528405 Broderick Pl, Cary, NC 27519

4326911, Apr 27, 1982

Dec 4, 1980

6/212976

Richard E. Howard - Holmdel NJ
Evelyn L. Hu - Somerset NJ

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

H01L 21306

156643

The successful application of the reactive ion etching technique to the III-V compounds requires the use of the appropriate etch gas. We have found that a gas mixture comprised of either CCl. sub. 2 F. sub. 2 alone or in combination with one or more of the gasses: argon (Ar), oxygen (O. sub. 2) and nitrogen (N. sub. 2) will cleanly and effectively etch GaAs and InP and their ternary and quaternary alloys as well as AlGaAs and the oxides of GaAs. The effective ranges of relative flow rates of Ar, CCl. sub. 2 F. sub. 2 and oxygen are: Ar (0-83%), CCl. sub. 2 F. sub. 2 (8-100%), O. sub. 2 (0-50%), and N. sub. 2 (0-60%).

4352870, Oct 5, 1982

Mar 27, 1981

6/248267

Richard E. Howard - Holmdel NJ
Evelyn L. Hu - Somerset NJ
Lawrence D. Jackel - Holmdel NJ

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

G03C 168

430271

The use of a specific two-layer resist composition with a more sensitive and thicker resist as the lower layer allows the production of lines on the order of 400 A in width separated by spaces on the order of 400 A.

4145699, Mar 20, 1979

Mar 20, 1978

5/888330

Evelyn L. Hu - Somerset NJ
Lawrence D. Jackel - Morganville NJ

Bell Telephone Laboratories, Incorporated - Murray Hill NJ

H01L 3922

357 5

Superconductor junctions adaptable for applications such as logic circuitry and magnetic flux detection are disclosed. These junctions utilize superconducting electrodes with a semiconductor barrier composed of a binary composition of germanium and tin. The composition of this binary composition strongly affects the electrical properties of the device. For example, when using two Sn electrodes, if the Sn/Ge ratio in the barrier is changed from 1:4 to 1:1 for a thickness of 600 A, the electrical properties of the junction transform from hysteretic to non-hysteretic characteristics.

2021021, Jul 8, 2021

Mar 18, 2021

17/205249

- Oakland CA, US
Yan Gao - Durham NC, US
Evelyn L. Hu - Cambridge MA, US
Shuji Nakamura - Santa Barbara CA, US

The Regents of the University of California - Oakland CA

H01L 33/22
H01L 33/32
H01L 33/00
H01L 33/60

A gallium nitride (GaN) based light emitting diode (LED), wherein light is extracted through a nitrogen face (N-face) of the LED and a surface of the N-face is roughened into one or more hexagonal shaped cones. The roughened surface reduces light reflections occurring repeatedly inside the LED, and thus extracts more light out of the LED. The surface of the N-face is roughened by an anisotropic etching, which may comprise a dry etching or a photo-enhanced chemical (PEC) etching.