Frank Hing Ma DeceasedBelmont, CA

6537011, Mar 25, 2003

Jul 31, 2000

09/629322

Danny Wang - San Jose CA
Dmitry Lubomirsky - Cupertino CA
Erwin Polar - San Jose CA
Brigitte Stoehr - San Jose CA
Mark Wiltse - Redwood City CA
Frank C. Ma - Scotts Valley CA

Applied Materials, Inc. - Santa Clara CA

B65G 4907

414217, 414941, 118728, 118729

A method and apparatus for supporting and transferring a substrate in a semiconductor wafer processing system. In one aspect, a support ring having one or more substrate support members mounted thereon and defining a central opening therein for receipt of a substrate support member during processing is disclosed. In another aspect, a substrate handler blade having a plurality of substrate supports disposed thereon is provided which is adapted to support a substrate thereon and effectuate substrate transfer between the substrate handler blade and the support ring.

8647446, Feb 11, 2014

Dec 7, 2011

13/313356

Satbir Kahlon - Livermore CA, US
Frank Ma - Scotts Valley CA, US

Intermolecular, Inc. - San Jose CA

B08B 5/00

134 31, 134 21, 134 251, 134 254, 134 255, 134 26, 134 30, 134 32, 134 33, 134 34, 134 36, 134 37, 134 42, 134902, 216 58

A method and system for cleaning a substrate in a multi-module cleaning assembly is provided. The method begins by receiving the substrate into the cleaning module. A cleaning chemistry, at a temperature elevated from an ambient temperature, is applied onto a top surface of the substrate. Concurrent with application of the cleaning chemistry, vapors are exhausted from the cleaning chemistry through a port located below a bottom surface of the substrate with the vapor exhaustion providing a negative pressure relative to a pressure external to the cleaning module. The application of the cleaning chemistry is terminated, followed by termination of the exhausting of the vapors. The substrate is dried after the flowing of inert gas is terminated.

2013013, May 30, 2013

Nov 28, 2011

13/305332

Satbir Kahlon - Livermore CA, US
Frank Ma - Scotts Valley CA, US

Intermolecular, Inc. - San Jose CA

B08B 3/08
B08B 7/04
B08B 5/00

134 30, 134 952

Methods for cleaning a substrate are provided. One such method includes receiving the substrate into a cleaning module and flowing an inert gas into the cleaning module. The flowing of the inert gas includes flowing the inert gas into an inlet defined within a top surface of the cleaning module and modifying a direction of the flowing inert gas to flow radially along the top surface of the cleaning module. Concurrent with or after initiating the flowing of the inert gas, a cleaning chemistry is introduced onto a surface of the substrate. The cleaning chemistry is at a temperature elevated from an ambient temperature. The dispensing of the cleaning chemistry is terminated and the flowing of the inert gas is terminated either concurrent with or after termination of the dispensing of the cleaning chemistry. The substrate is dried after the termination of the flowing of the inert gas.

2014017, Jun 26, 2014

Feb 25, 2014

14/189014

- San Jose CA, US
Jeffrey Chih-Hou Lowe - Cupertino CA, US
Frank C. Ma - Scotts Valley CA, US
Sandeep Mariserla - Mountain View CA, US
Robert Anthony Sculac - Lake Oswego OR, US

Intermolecular, Inc. - San Jose CA

H01L 21/02

134 26

The embodiments describe methods for controlling the particles generated when cleaning and drying a wafer in a spin rinse dryer (SRD) module. In some embodiments, the substrate surface is cooled by dispensing deionized (DI) water across the surface of the substrate, while the substrate rests on the SRD chuck. In addition, a method for controlling the particles generated when sleeves in a processing module or SRD contact a substrate surface during a clamping operation or when the sleeves are removed from the substrate surface is provided. A bottom edge or lip of the sleeves and/or the surface of the wafer contacting the sleeve is wetted during clamping/unclamping operations. Alternatively, the substrate may be wetted prior to clamping/unclamping operations.

2014012, May 8, 2014

Nov 7, 2012

13/671478

- San Jose CA, US
Aaron T. Francis - San Jose CA, US
Frank C. Ma - Scotts Valley CA, US
George Mirth - Saratoga CA, US

INTERMOLECULAR, INC. - San Jose CA

B24B 37/00
B24B 37/10
B24B 37/26

451 28, 451103, 451177, 451360

Polishing and cleaning techniques are combinatorially processed and evaluated. A polishing system can include a reactor assembly having multiple reaction chambers, with at least a reaction chamber including a rotatable polishing head, slurry and chemical distribution, chemical and water rinse, and slurry and fluid removal. Different downward forces can be applied to the polishing heads for evaluating optimum process conditions. Channels in the polishing pads can redistribute slurry and chemical to the polishing area.