Fred Ju, 94703 Bunker Hill Ave, Los Angeles, CA 90012

4655848, Apr 7, 1987

Aug 26, 1985

6/769816

Robert E. Kay - Newport Beach CA
Hakchill Chan - Corona del Mar CA
Fred Ju - Huntington Beach CA
Burton A. Bray - Laguna Niguel CA

Ford Aerospace & Communications Corporation - Detroit MI

H01L 2138
H01L 2136

148 15

A layer of HgCdTe (15) epitaxially grown onto a crystalline support (10), e. g. , of sapphire of GaAs. A CdTe substrate (5) is epitaxially grown to a thickness of between 1 micron and 5 microns on the support (10). A HgTe source (3) is spaced from the CdTe substrate (5) a distance of between 0. 1 mm and 10 mm. The substrate (5) and source (3) are heated together in a thermally insulating, reusable ampoule (17) within a growth temperature range of between 500. degree. C. and 625. degree. C. for a growth step having a duration of between 5 minutes and 4 hours. Then an interdiffusion step is performed, in which the source (3) and substrate (5) are cooled within a temperature range of between 400. degree. C. and 500. degree. C. for a time of between 1 hour and 16 hours. In a first growth step embodiment, the source (3) and substrate (5) are isothermal.

4743310, May 10, 1988

Feb 2, 1987

7/010028

Robert E. Kay - Newport Beach CA
Hakchill Chan - Corona del Mar CA
Fred Ju - Huntington Beach CA
Burton A. Bray - Laguna Niguel CA

Ford Aerospace & Communications Corporation - Detroit MI

H01L 21363

148 33

A layer of HgCdTe (15) is epitaxially grown on a crystalline support (10). A single crystal CdTe substrate (5) is first epitaxially grown to a thickness of between 1 micron and 5 microns onto the support (10). Then a HgTe source (3) is spaced from the CdTe substrate (5) a distance of between 0. 1 mm and 10 mm. The substrate (5) and source (3) are heated together in a thermally insulating, reusable ampoule (17) within a growth temperature range of between 500. degree. C. and 625. degree. C. for a growth time of between 5 minutes and 13 hours. In a first growth step embodiment, the source (3) and substrate (5) are non-isothermal. In a second growth step embodiment, the source (3) and substrate (5) are isothermal. Then an optional interdiffusion step is performed, in which the source (3) and substrate (5) are cooled within a temperature range of between 400. degree. C. and 500. degree. C. for a time of between 1 hour and 16 hours.

4648917, Mar 10, 1987

Aug 26, 1985

6/769909

Robert E. Kay - Newport Beach CA
Hakchill Chan - Corona del Mar CA
Fred Ju - Huntington Beach CA
Burton A. Bray - Laguna Niguel CA

Ford Aerospace & Communications Corporation - Detroit MI

H01L 21365

148175

A layer of HgCdTe (15) is epitaxially grown onto a CdTe substrate (5). A HgTe source (3) is spaced from the CdTe substrate (5) a distance of between 0. 1 mm and 10 mm. The substrate (5) and source (3) are heated within a temperature range of between 500. degree. C. and 625. degree. C. for a processing step having a duration of between 5 minutes and 4 hours. During at least 5 minutes of this processing step, the substrate (5) is made to have a greater temperature than the source (3). Preferably the substrate (5) is never at a lower temperature than the source (3). The source (3) and substrate (5) are heated together in a thermally insulating, reusable ampoule (17). The CdTe substrate (5) is preferably a thin film epitaxially grown on a support (10) e. g. , of sapphire or GaAs. When support (10) is not used, the CdTe substrate (5) is polished; and sublimation and solid state diffusion growth mechanisms are present in the growth of the HgCdTe (15).

4846926, Jul 11, 1989

Sep 3, 1987

7/092858

Robert E. Kay - Newport Beach CA
Hakchill Chan - Corona del Mar CA
Fred Ju - Huntington Beach CA
Burton A. Bray - Laguna Niguel CA

Ford Aerospace & Communications Corporation - Newport Beach CA

C30B 2302

156612

A layer of HgCdTe (15) epitaxially grown on a crystalline support (10). A single crystal CdTe substrate (5) is first epitaxially grown to a thickness of between 1 micron and 5 microns onto the support (10). Then a HgTe source (3) is spaced from the CdTe substrated (5) a distance of between 0. 1 mm and 10 mm. The substrate (5) and source (3) are heated together in a thermally insulating, reusable ampoule (17) within a growth temperature range of between 500. degree. C. and 625. degree. C. for a growth time of between 5 minutes and 13 hours. In a first growth step embodiment, the source (3) and substrate (5) are isothermal. In a second growth step embodiment, the source (3) and substrate (5) are non-isothermal. Then an optional interdiffusion step is performed, in which the source (3) and substrate (5) are cooled within a temperature range of between 400. degree. C. and 500. degree. C. for a time of between 1 hour and 16 hours.