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Gang Liu, 5513739 Canopus Dr, Orlando, FL 32828

Gang Liu Phones & Addresses

Orlando, FL   

Alhambra, CA   

Pomona, CA   

Monterey Park, CA   

Kansas City, KS   

Blue Springs, MO   

Independence, MO   

Fond du Lac, WI   

Mountain View, CA   

1301 S Atlantic Blvd APT 216B, Monterey Park, CA 91754   

Work

Company: Drishticon, inc Sep 2014 Position: Software engineer

Education

School / High School: Chinese Academy of Sciences Sep 2003 Specialities: Ph.D. in Chemical Engineering

Mentions for Gang Liu

Gang Liu resumes & CV records

Resumes

Gang Liu Photo 43

Gang Liu

Gang Liu Photo 44

Software Engineer

Work:
Zhou Brothers
Software Engineer
Gang Liu Photo 45

Gang Liu

Gang Liu Photo 46

Gang Liu

Gang Liu Photo 47

Gang Liu

Gang Liu Photo 48

Gang Liu

Location:
United States
Gang Liu Photo 49

Gang Liu - Union City, CA

Work:
Drishticon, Inc Sep 2014 to 2000
Software Engineer
Cella Energy US Inc - Kennedy Space Center, FL Sep 2012 to Jun 2013
Research Scientist
Graphene Laboratories, Inc - Calverton, NY May 2012 to Sep 2012
Research Scientist
University of South Carolina - Columbia, SC Mar 2008 to Feb 2010
Postdoctoral Fellow
Education:
Chinese Academy of Sciences Sep 2003 to Jan 2008
Ph.D. in Chemical Engineering

Publications & IP owners

Us Patents

Suspended Structures

US Patent:
7948042, May 24, 2011
Filed:
Mar 3, 2009
Appl. No.:
12/397183
Inventors:
Chun Ning Lau - Diamond Bar CA, US
Gang Liu - Riverside CA, US
Jairo Velasco, Jr. - Riverside CA, US
Assignee:
The Regents of the University of California - Oakland CA
International Classification:
H01L 29/84
US Classification:
257415, 257417, 257419, 257E43002, 257E43003, 257E43007, 257E27005, 257E27046, 257E27064
Abstract:
A multi-level lithography processes for the fabrication of suspended structures are presented. The process is based on the differential exposure and developing conditions of several a plurality of resist layers, without harsher processes, such as etching of sacrificial layers or the use of hardmasks. These manufacturing processes are readily suited for use with systems that are chemically and/or mechanically sensitive, such as graphene. Graphene p-n-p junctions with suspended top gates formed through these processes exhibit high mobility and control of local doping density and type. This fabrication technique may be further extended to fabricate other types of suspended structures, such as local current carrying wires for inducing local magnetic fields, a point contact for local injection of current, and moving parts in microelectromechanical devices.

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