Geoffrey B O'Connor, 7148 Far Horizon Dr, Bridgeport, CT 06612

7678458, Mar 16, 2010

Jan 24, 2007

11/626747

Matthew Lipson - Stamford CT, US
Robert D. Harned - Redding CT, US
Geoffrey O'Connor - Easton CT, US
Timothy O'Neil - New Milford CT, US

ASML Holding N.V. - Veldhoven

G21K 5/00
B32B 3/20
B32B 17/06
B32B 15/00
B32B 13/04
B32B 9/04
B32B 9/00

428428, 378 34, 378208, 428188, 428432, 428446, 428453, 428698

A wafer chuck for use in a lithographic apparatus, which includes a low-thermal expansion glass ceramic substrate, a silicon silicon carbide layer, and a bonding layer comprising silicate having a strength of at least about 5 megapascals, the bonding layer attaching the silicon silicon carbide layer to the substrate is described. Also, a method of forming a wafer chuck for use in a lithographic apparatus, which includes coating a portion of one or both of a low-thermal expansion glass ceramic substrate and a silicon silicon carbide layer with a bonding solution, and contacting the substrate and the silicon silicon carbide layer to bond the substrate and the silicon silicon carbide layer together is described.

8168017, May 1, 2012

Feb 4, 2010

12/700049

Matthew Lipson - Stamford CT, US
Robert D. Harned - Redding CT, US
Geoffrey O'Connor - Easton CT, US
Timothy O'Neil - New Milford CT, US

ASML Holding N.V. - Veldhoven

B29C 65/00
B05D 1/36
C03B 29/00
C09J 5/00

156 60, 4272071, 156 8911, 156297, 156305

A wafer chuck for use in a lithographic apparatus, which includes a low-thermal expansion glass ceramic substrate, a silicon silicon carbide layer, and a bonding layer comprising silicate having a strength of at least about 5 megapascals, the bonding layer attaching the silicon silicon carbide layer to the substrate is described. Also, a method of forming a wafer chuck for use in a lithographic apparatus, which includes coating a portion of one or both of a low-thermal expansion glass ceramic substrate and a silicon silicon carbide layer with a bonding solution, and contacting the substrate and the silicon silicon carbide layer to bond the substrate and the silicon silicon carbide layer together is described.

5285142, Feb 8, 1994

Feb 9, 1993

8/015520

Daniel N. Galburt - Wilton CT
Geoffrey O'Connor - Fairfield CT

SVG Lithography Systems, Inc. - Wilton CT

G05B 1100

318640

An electromagnetic sub-stage and an electromagnetic monolithic stage coupled such that one follows the other having a single reference surface positioned therebetween. A sub-stage having linear motors for movement in the X-Y direction is mounted by a U bracket to a monolithic stage. The monolithic stage is suspended by flat electromagnetic coils providing precise motion of the body of the monolithic stage in X, Y, Z, and rotation about the Z axis or. theta. Follow control means links or tracks the movement of the monolithic stage to the sub-stage such that the monolithic stage positioning coils are centered in their respective magnetic structure. Adjustable mechanical stops attached the monolithic stage in combination with air bearings riding on the reference surface limit travel of the monolithic stage in the focus or Z direction. The single reference surface extends over the entire range of motion of the monolithic stage. This improves position accuracy, and cleaning and servicing of the apparatus.

4760429, Jul 26, 1988

Nov 5, 1986

6/927202

Geoffrey O'Connor - Fairfield CT

The Perkin-Elmer Corporation - Norwalk CT

G03B 2732

355 77

Method and apparatus are disclosed for speeding up reticle changes during the production of semiconductor wafers under those circumstances wherein three reticles are employed, one (C) having a substantially longer exposure period than the others (A, B). The wafer is exposed to the reticles in the sequence ACB-BCA-ACB, etc.

2018032, Nov 8, 2018

Oct 5, 2016

15/764594

- Veldhoven, NL
Michael Leo NELSON - Redding CT, US
Jacobus Cornelis Gerardus VAN DER SANDEN - Geldrop, NL
Geoffrey O'CONNOR - Easton CT, US
Michael Andrew CHIEDA - Easton CT, US
Tammo UITTERDIJK - Wilton CT, US

ASML Holding N.V. - Veldhoven
ASML Netherlands B.V. - Veldhoven

G03F 7/20
H01L 21/683

A lithographic apparatus includes a clamp () configured to receive an object (). The clamp defines at least one channel () configured to pass a fluid at a first fluid temperature. The lithographic apparatus also includes a chuck () coupled to the clamp. The chuck () defines at least one void () configured to thermally insulate the chuck from the clamp.