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Gerard P Malloy, 57102 Annesbrooke Ct, Warner Robins, GA 31088

Gerard Malloy Phones & Addresses

102 Annesbrooke Ct, Warner Robins, GA 31088    405-3298242   

Stillwater, OK   

Temecula, CA   

9750 Skyridge, Arcadia, OK 73007    405-3968265   

312 Sherry Ave, Norman, OK 73069    405-3298242   

Enid, OK   

Jacksonville, FL   

312 N Sherry Ave, Norman, OK 73069    405-9212035   

Work

Position: Executive, Administrative, and Managerial Occupations

Education

Degree: Associate degree or higher

Emails

Mentions for Gerard P Malloy

Publications & IP owners

Us Patents

Method Of Making A Microelectric Device Using An Alternate Substrate

US Patent:
5455202, Oct 3, 1995
Filed:
Jan 19, 1993
Appl. No.:
8/006119
Inventors:
Gerard T. Malloy - Oceanside CA
Joseph J. Bendik - Carlsbad CA
Assignee:
Hughes Aircraft Company - Los Angeles CA
International Classification:
H01L 21465
US Classification:
437228
Abstract:
A microelectronic device is fabricated on a first substrate (40), and transferred to a second substrate (58). The first substrate (40) has a silicon etchable layer (42), a silicon dioxide etch-stop layer (44) overlying the etchable layer (42), and a single-crystal wafer (46) overlying the etch-stop layer (44). A microelectronic circuit element (48) is formed in the wafer (46) of the first substrate (40). The wafer (46) of the first substrate (40) is attached to an aluminum oxide temporary substrate (52), and the etchable layer (42) of the first substrate (40) is etched away down to the etch-stop layer (44) to leave a primary device structure. The etch-stop layer (44) may optionally be processed to remove all or a part of the layer. An exposed surface (56) of the primary device structure is fixed to the second substrate (58), and the temporary substrate (52) is removed.

Process Of Manufacturing A Microelectric Device Using A Removable Support Substrate And Etch-Stop

US Patent:
5591678, Jan 7, 1997
Filed:
Jun 7, 1995
Appl. No.:
8/482172
Inventors:
Joseph J. Bendik - Carlsbad CA
Gerard T. Malloy - Oceanside CA
Ronald M. Finnila - Carlsbad CA
Assignee:
HE Holdings, Inc. - Los Angeles CA
International Classification:
H01L 21283
H01L 2156
H01L 2158
H01L 2160
US Classification:
437208
Abstract:
A microelectronic device is fabricated by furnishing a first substrate (40) having a silicon etchable layer (42), a silicon dioxide etch-stop layer (44) overlying the silicon layer (42), and a single-crystal silicon wafer (46) overlying the etch-stop layer (44), the wafer (46) having a front surface (52) not contacting the etch stop layer (44). A microelectronic circuit element (50) is formed in the single-crystal silicon wafer (46). The method further includes attaching the front surface (52) of the single-crystal silicon wafer (46) to a second substrate (58), and etching away the silicon layer (42) of the first substrate (40) down to the etch-stop layer (44). The second substrate (58) may also have a microelectronic circuit element (58') therein that can be electrically interconnected to the microelectronic circuit element (50).

Externally Connected Thin Electronic Circuit Having Recessed Bonding Pads

US Patent:
5731222, Mar 24, 1998
Filed:
Aug 1, 1995
Appl. No.:
8/509849
Inventors:
Gerard T. Malloy - Oceanside CA
Joe B. Tyra - Ventura CA
Assignee:
Hughes Aircraft Company - Los Angeles CA
International Classification:
H01L 21283
H01L 2160
US Classification:
437182
Abstract:
Recesses (46) are etched into the finished peripheral boundaries of a structure formed of a generally planar electronic circuit (40) on an upper surface (42) of a wafer (44). Bonding pads (48) are deposited in the recesses (46) and interconnected to the electronic circuit (40). External leads (52) are attached to the bonding pads (48), such that the external leads (52) lie below the plane of the electronic circuit (40).

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