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Gilbert Carrasquillo316 Partridge Run, Mountainside, NJ 07092

Gilbert Carrasquillo Phones & Addresses

316 Partridge Run, Mountainside, NJ 07092    908-3891713   

Piscataway, NJ   

316 Partridge Run, Mountainside, NJ 07092    856-9832290   

Work

Position: Clerical/White Collar

Education

Degree: Graduate or professional degree

Mentions for Gilbert Carrasquillo

Gilbert Carrasquillo resumes & CV records

Resumes

Gilbert Carrasquillo Photo 22

Photographer

Location:
316 Partridge Run, Mountainside, NJ 07092
Industry:
Photography
Work:
Getty Images
Photographer
Splash News
Contributing Photographer and Videographer
Gc Media
Owner
Education:
University of Notre Dame
University of Hawaii at Manoa
Skills:
Photojournalism, Editorial, Image Editing, Magazines, Commercial Photography, Celebrity, Fashion, Event Photography, Photos, Photography, Digital Photography, Fine Art Photography, Photoshop, Video, Mac, Lightroom, Lifestyle Photography, Sports Photography, Fashion Photography, Nikon, Adobe Creative Suite, Portraits, Location Photography, Photo Editing, Black and White, Still Life, Reportage, Styling, Travel Photography, Studio Lighting, Breaking News, Photo Editor, Celebrity Photography, Street Photography
Interests:
Politics
Poverty Alleviation
Science and Technology
Human Rights
Arts and Culture
Languages:
Spanish
Italian
Bulgarian
Portuguese
English
Catalan
Gilbert Carrasquillo Photo 23

Materials Lab Manager

Location:
Mountainside, NJ
Industry:
Glass, Ceramics, & Concrete
Work:
Morgan Tecnical Ceramics-Certech
Materials Lab Manager

Publications & IP owners

Us Patents

Super Tough Monolithic Silicon Nitride

US Patent:
5100847, Mar 31, 1992
Filed:
Sep 17, 1991
Appl. No.:
7/759970
Inventors:
Chien-Wei Li - Livingston NJ
Jean Yamanis - Morristown NJ
Gilbert Carrasquillo - Piscataway NJ
Assignee:
Allied-Signal Inc. - Morris Township, Morris County NJ
International Classification:
C04B 3558
US Classification:
501 97
Abstract:
A monolithic silicon nitride ceramic is densified at temperatures lower than 2000. degree. C. and heat treated at temperatures greater than 2000. degree. C. in the presence of at least 6. 5 w % of multi-component sintering aids. This monolithic silicon nitride has a highly acicular microstructure Chevron Notch fracture toughness greater than 9 MPa. multidot. m. sup. 1/2, R-curve behavior, high Weibull modulus, excellent damage tolerance, high thermal conductivity, and other desirable properties.

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