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Heng Liu, 409102 Magna Carta Loop, Austin, TX 78754

Related to:
Lihua Zhao 46 Hao Liu 48 Li Rebecca Lui Powen Nancy Chang 70

Heng Liu Phones & Addresses

Austin, TX   

6353 Bancroft Way, San Jose, CA 95129   

Cupertino, CA   

New York, NY   

Sioux Falls, SD   

Work

Company: ebay Address: 2211 N First Street, San Jose, CA 94086 Phones: 408-9674854 (Office)
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Mentions for Heng Liu

Career records & work history

Real Estate Brokers

Heng Liu Photo 1

Heng Liu

Specialties:
Buyer's Agent, Listing Agent
Work:
ebay
2211 N First Street, San Jose, CA 94086
408-9674854 (Office)

Heng Liu resumes & CV records

Resumes

Heng Liu Photo 34

Staff Data Scientist

Location:
440 Rinconada Ct, Los Altos, CA 94022
Industry:
Information Technology And Services
Work:
Upwork May 2015 - Oct 2015
Global Payments Analyst Google May 2015 - Oct 2015
Program Manager Elance-Odesk Apr 2014 - May 2015
Global Payments Analyst Odesk Jan 2014 - Apr 2014
Trust and Safety Analyst Google Jan 2014 - Apr 2014
Staff Data Scientist Amd Jun 2012 - Aug 2012
Mba Leadership Development Program Intern Google May 2011 - Aug 2011
Decision Support Engineering Analyst Intern Monsoon Accessorize Aug 2008 - Jan 2011
Regional Manager of China East
Education:
The University of Texas at Austin 2011 - 2013
Master of Business Administration, Masters Columbia University In the City of New York 2008 - 2012
Doctorates, Doctor of Philosophy, Statistics Nankai University 2003 - 2007
Bachelors, Bachelor of Science, Mathematics, Applied Mathematics University of Illinois at Urbana - Champaign 1999 - 2006
Shanghai University of Finance and Economics 2002 - 2006
Bachelors, Bachelor of Arts, Bachelor of Business Administration, International Economics, Accounting Elementory School
Skills:
Analytics, R, Predictive Analytics, Data Mining, Predictive Modeling, Sas, Statistical Modeling, Statistics, Time Series Analysis, Sql, Data Analysis, Machine Learning, Logistic Regression, Big Data, Quantitative Analytics, Matlab, Latex, C++, Python, Mathematical Modeling, Applied Mathematics, Quantitative Finance, Probability, Mathematics, Monte Carlo Simulation, Market Research, Business Intelligence, Cross Functional Team Leadership, Financial Modeling, Business Strategy, Project Management, Financial Analysis, Business Analysis, C#, Supply Chain Management, Analysis, Product Management, Corporate Finance, Team Management
Languages:
English
Mandarin
Heng Liu Photo 35

Senior Software Engineer

Location:
2041 Addenbrock Dr, Morrisville, NC 27560
Industry:
Computer Software
Work:
Deloitte Aug 2018 - 2018
Test Automation Engineer Experis Aug 2018 - 2018
Senior Software Engineer Delta Five Systems 2014 - 2014
System Engineer Yeeyan 2010 - 2012
Software Engineer Clemson University College of Engineering, Computing and Applied Sciences 2006 - 2010
Graduate Research and Teaching Assistant
Education:
University of North Carolina at Charlotte 2008 - 2012
Doctorates, Doctor of Philosophy, Computer Science, Philosophy University of North Carolina at Charlotte 2009 - 2012
Masters, Computer Science Clemson University 2006 - 2008
Masters, Electronics, Computer Science, Computer Engineering, Engineering, Communications, Electronics Engineering Tsinghua University 1999 - 2006
Tsinghua University 2003 - 2006
Masters, Robotics, Engineering, Mechatronics Tsinghua University 1999 - 2003
Bachelors, Robotics, Engineering, Mechatronics
Skills:
Matlab, C++, Java, Algorithms, Python, Sql, Linux, Agile Methodologies, C, Opencv, Machine Learning, Programming, Software Engineering, Research, Sales, Opengl, Android, Embedded Systems, Robotics, Intelligent Systems, Automatic Control, Software Development, Test Automation
Interests:
Chorus Singing
Calligraphy
Basketball
New Technologies
Swimming
Bible Study
Languages:
Mandarin
English
Spanish
Heng Liu Photo 36

Heng Liu

Publications & IP owners

Us Patents

Ingan/Algan/Gan Multilayer Buffer For Growth Of Gan On Sapphire

US Patent:
6630695, Oct 7, 2003
Filed:
Jul 8, 2002
Appl. No.:
10/191886
Inventors:
Changhua Chen - San Jose CA, 95129
James Dong - Claremont CA, 91711
Heng Liu - Arcadia CA, 91007
International Classification:
H01L 3300
US Classification:
257190, 257103
Abstract:
A GaN based three layer buffer structure disposed on a substrate, and having a GaN layer disposed on the three layer buffer structure, the GaN layer serving as a platform for growth of a light emitting structure thereon.

High Power Allngan Based Multi-Chip Light Emitting Diode

US Patent:
6869812, Mar 22, 2005
Filed:
May 13, 2003
Appl. No.:
10/438108
Inventors:
Heng Liu - Sunnyvale CA, US
International Classification:
H01L021/00
H01L021/20
US Classification:
438 22, 438 46, 438 99, 438127
Abstract:
A light emitting diode chip having a substantially transparent substrate and having an aspect ratio which defines an elongated geometry provides enhanced efficiency and brightness. Method for forming and operating the same are also disclosed.

Chemical Vapor Deposition Reactor Having Multiple Inlets

US Patent:
7641939, Jan 5, 2010
Filed:
Oct 31, 2007
Appl. No.:
11/932293
Inventors:
Heng Liu - Sunnyvale CA, US
Assignee:
Bridgelux, Inc. - San Jose CA
International Classification:
C23C 16/00
US Classification:
42725528
Abstract:
A chemical vapor deposition reactor has a wafer carrier which cooperates with a chamber of the reactor to facilitate laminar flow of reaction gas within the chamber and a plurality of injectors configured in flow controllable zones so as to mitigate depletion.

Light Emitting Device Having Stacked Multiple Leds

US Patent:
7732803, Jun 8, 2010
Filed:
May 30, 2008
Appl. No.:
12/130824
Inventors:
Frank Shum - Sunnyvale CA, US
Heng Liu - Sunnyvale CA, US
Assignee:
Bridgelux, Inc. - Livermore CA
International Classification:
H01L 31/00
US Classification:
257 13, 257 94, 257 99, 257E25032, 257E51022, 438 22, 438 28, 438 47
Abstract:
A light emitting device and method of producing the same is disclosed. The light emitting device includes a heterostructure having a plurality of light emitting diodes (LEDs) stacked one on top of another.

Light Emitting Diodes With Smooth Surface For Reflective Electrode

US Patent:
7781780, Aug 24, 2010
Filed:
May 13, 2008
Appl. No.:
12/120051
Inventors:
Chao-Kun Lin - Sunnyvale CA, US
Heng Liu - Sunnyvale CA, US
Assignee:
Bridgelux, Inc. - Livermore CA
International Classification:
H01L 27/15
H01L 29/26
H01L 31/12
H01L 33/00
H01L 29/22
H01L 29/24
H01L 29/06
H01L 31/0328
H01L 31/0336
H01L 31/072
H01L 31/109
US Classification:
257 79, 257 13, 257 94, 257103, 257E33001, 257E33043, 257E33074
Abstract:
A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed.

Iii-Nitride Based On Semiconductor Device With Low-Resistance Ohmic Contacts

US Patent:
7943949, May 17, 2011
Filed:
Sep 9, 2004
Appl. No.:
10/936496
Inventors:
Yun Li Li - Tainan, TW
Heng Liu - Sunnyvale CA, US
Assignee:
BridgeLux, Inc. - Livermore CA
International Classification:
H01L 33/02
H01L 33/20
US Classification:
257 99, 257E33006, 257E33065
Abstract:
The present invention utilizes high-indium-content InGaN islands (0

Light Emitting Diodes With Smooth Surface For Reflective Electrode

US Patent:
8163578, Apr 24, 2012
Filed:
Jul 12, 2010
Appl. No.:
12/834747
Inventors:
Chao-Kun Lin - Sunnyvale CA, US
Heng Liu - Sunnyvale CA, US
Assignee:
Bridgelux, Inc. - Livermore CA
International Classification:
H01L 21/00
US Classification:
438 26, 438 46, 257 76, 257194, 257E33034
Abstract:
A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed.

Light Emitting Diodes With Smooth Surface For Reflective Electrode

US Patent:
8168984, May 1, 2012
Filed:
Feb 23, 2011
Appl. No.:
13/033533
Inventors:
Chao-Kun Lin - Livermore CA, US
Heng Liu - Livermore CA, US
Assignee:
Bridgelux, Inc. - Livermore CA
International Classification:
H01L 31/0256
US Classification:
257 76, 257194, 257E33034, 438 26, 438 46
Abstract:
A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are disposed on one side of the epitaxial layer structure. The epitaxial layer structure includes a transparent ohmic contact layer having a root-means-square (RMS) roughness less than about 3 nm at a surface whereon the second electrode is formed. The epitaxial layer structure includes a p-type epitaxial layer and a n-type epitaxial layer, wherein the n-type epitaxial layer is coupled between the first electrode and the p-type epitaxial layer, and the p-type epitaxial layer is between the second electrode and the n-type epitaxial layer. The first electrode is located on the n-type epitaxial layer.

Isbn (Books And Publications)

Green River Daydreams

Author:
Heng Liu
ISBN #:
0802116906

Black Snow

Author:
Heng Liu
ISBN #:
0802133894

Possible Relatives

Cynthia S Liu  David Y Liu  Dean Liu  Da J Liu  Debbie Y Liu  Deborah Y Liu  Dan Liu  Heng Li  Heng S Lin  Heng Teng 

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