Hong Xu, 63Fremont, CA

6346183, Feb 12, 2002

Aug 3, 2000

09/632501

Amanda Baer - Campbell CA
Richard Hsiao - San Jose CA
Cherngye Hwang - San Jose CA
Clinton David Snyder - Los Gatos CA
Hong Xu - San Jose CA

International Business Machines Corporation - Armonk NY

C25C 1434

205119, 2041922, 427131

A fabrication method using a bottom anti-reflective coating (BARC) eliminating deleterious effects of unwanted reflected light during the photo exposure step of a photolithographic process. The BARC coating comprises a carbon coating having a thickness of 300 angstroms, deposited by a carbon ion beam deposition tool, and an initial silicon BARC coating layer having thickness of 20 angstroms deposited before the carbon coating. Where the BARC layer is utilized in a photolithographic NiFe pole tip fabrication process, a NiFe seed layer is first deposited upon a substrate. The BARC layer is then formed on the NiFe seed layer and the pole tip trench is then photolithographically created. Thereafter, the BARC layer is removed from the bottom of the trench, utilizing a reactive ion etch process, exposing the NiFe seed layer. The NiFe pole tip is then fabricated into the trench, and any remaining photoresist and BARC layer are removed.

6376540, Apr 23, 2002

Dec 17, 1999

09/230065

Judith A. Kelleher - Fremont CA
Kirk R. Maples - San Jose CA
Lowell David Waterbury - San Carlos CA
Allan L. Wilcox - Mountain View CA
Hong Xu - Cupertino CA
Yong-Kang Zhang - Santa Clara CA

Centaur Pharmaceuticals, Inc. - Sunnyvale CA

A61K 3134

514471, 5142315, 5142541

Disclosed are furan nitrone compounds and pharmaceutical compositions containing such compounds. The disclosed compounds are useful as analytical reagents for detecting free radicals and as therapeutics for treating a wide variety of medical dysfunctions and diseases.

6510022, Jan 21, 2003

Feb 15, 2000

09/504969

Ashok Lahiri - Mainz, DE
Edward Hin Pong Lee - San Jose CA
Eric James Lee - San Jose CA
Hong Xu - San Jose CA

International Business Machines Corporation - Armonk NY

G11B 5147

360126

The thin film magnetic head of the present invention includes an improved P pole tip/yoke interface structure. The interface structure includes yoke material that is formed in a concave curved shape at the interface between the P pole tip and the yoke, such that a right angle interface between the P pole tip and the yoke is eliminated. The process for forming the P pole tip/yoke interface includes a second CMP polishing step that is performed on the surface of the write head wafer subsequent to the plating of the P pole tip thereon, and subsequent to a first CMP step. This second CMP step utilizes a relatively soft polishing pad and an acidic polishing slurry having a pH within the range of approximately 1 to approximately 5, and preferably approximately 2. 5. The acidic polishing slurry contains a chemical agent which preferentially attacks the P pole tip material, such that the second CMP step results in the recession of the upper surface of the P pole tip relative to the dielectric layer surrounding it, as well as the significant rounding of the upper edges of the dielectric trench in which the P pole tip is formed. Thereafter, when the yoke is plated onto the P pole tip the rounded upper edges of the dielectric trench result in a concave curved interface between the yoke and the P pole tip.

6770209, Aug 3, 2004

Jan 9, 2002

10/043373

Clinton David Snyder - Los Gatos CA
Howard Gordon Zolla - San Jose CA
Hong Xu - San Jose CA
James Bernard Kruger - Half Moon Bay CA

International Business Machines Corporation - Armonk NY

B44C 122

216 22, 2960307

An isotropic deposition method for trench narrowing of thin film magnetic write head features to be created by reactive ion etching. According to the method, a photolithographically defined photoresist trench is formed over a hardmask and underlying polymer layer as part of tri-layer resist process. Instead of performing the usual hardmask and polymer etching steps using the photoresist mask pattern, a spacer layer is deposited isotropically or directionally at an angle to cover the vertical side walls of the trench. The spacer layer is etchable by the hardmask etch process but resistant to the polymer etch process. When the hardmask etch process is performed, the spacer layer material applied to the trench side walls remains intact, thereby defining a narrowed trench that is extended by the subsequent base layer etch process.

6912772, Jul 5, 2005

Sep 7, 2001

09/948957

Ashok Lahiri - Mainz, DE
Edward Hin Pong Lee - San Jose CA, US
Eric James Lee - San Jose CA, US
Hong Xu - San Jose CA, US

Hitachi Global Storage Technologies Netherlands, B.V. - Amsterdam

G11B005/127
H04R031/00

2960316, 2960313, 2960314, 2960315, 2960318, 360122, 360126, 360317, 360318, 3602341, 3602342, 3602343, 451 5, 451 41

A process for forming the Ppole tip/yoke interface of a magnetic head that includes a second CMP polishing step that is performed on the surface of the write head wafer subsequent to the plating of the Ppole tip thereon, and subsequent to a first CMP step. This second CMP step utilizes a relatively soft polishing pad and an acidic polishing slurry which preferentially attacks the Ppole tip material. This results in the recession of the upper surface of the Ppole tip relative to the dielectric layer surrounding it, and significant rounding of the upper edges of the dielectric trench in which the Ppole tip is formed. Thereafter, when the yoke is plated onto the Ppole tip the rounded upper edges of the dielectric trench result in a concave curved interface between the yoke and the Ppole tip.

6972928, Dec 6, 2005

Jul 26, 2004

10/898799

Clinton David Snyder - Los Gatos CA, US
Howard Gordon Zolla - San Jose CA, US
Hong Xu - San Jose CA, US
James Bernard Kruger - Half Moon Bay CA, US

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

G11B005/235
G11B005/23

360120, 360119

An isotropic deposition method for trench narrowing of thin film magnetic write head features to be created by reactive ion etching. According to the method, a photolithographically defined photoresist trench is formed over a hardmask and underlying polymer layer as part of tri-layer resist process. Instead of performing the usual hardmask and polymer etching steps using the photoresist mask pattern, a spacer layer is deposited isotropically or directionally at an angle to cover the vertical side walls of the trench. The spacer layer is etchable by the hardmask etch process but resistant to the polymer etch process. When the hardmask etch process is performed, the spacer layer material applied to the trench side walls remains intact, thereby defining a narrowed trench that is extended by the subsequent base layer etch process.

7127801, Oct 31, 2006

Mar 24, 2005

11/090087

Ashok Lahiri - Mainz, DE
Edward Hin Pong Lee - San Jose CA, US
Eric James Lee - San Jose CA, US
Hong Xu - San Jose CA, US

Hitachi Global Storage Technologies Netherlands, B.V. - Amsterdam

G11B 5/127
H04R 31/00

2960316, 2960307, 2960313, 2960314, 2960315, 2960318, 360126, 360317, 427127, 427128, 451 5, 451 41, 216 65

A thin film magnetic head that includes an improved P pole tip/yoke interface. The process for forming the P pole tip/yoke interface includes a CMP polishing step that is performed on the surface of the wafer subsequent to the plating of the P pole tip. This CMP step utilizes a relatively soft polishing pad and an acidic polishing slurry which preferentially attacks the P pole tip material, such that the CMP step results in the recession of the upper surface of the P pole tip relative to the dielectric layer surrounding it, as well as the significant rounding of the upper edges of the dielectric trench in which the P pole tip is formed. Thereafter, when the yoke is plated onto the P pole tip the rounded upper edges of the dielectric trench result in a concave curved interface between the yoke and the P pole tip.

7237256, Jun 26, 2007

Jul 14, 2003

10/619657

Qingwen Cheng - Fremont CA, US
Bhavna Bhatnagar - Sunnyvale CA, US
Hong Xu - Palo Alto CA, US
Wei Sun - Los Altos CA, US
Ping Luo - Union City CA, US
Shivaram Bhat - Sunnyvale CA, US
Aravindan Ranganathan - San Jose CA, US

Sun Microsystems, Inc. - Santa Clara CA

H04L 9/32

726 3, 726 4, 726 8

Embodiments of the present invention provide an open and interoperable single sign-on session in a heterogeneous communication network. The open and interoperable single sign-on system is configured by exchanging an entity identifier, an account mapping, an attribute mapping, a site attribute list, an action mapping and/or the like. The entity identifier, account mapping, attribute mapping, site attribute list, action mapping and the like for each partner entity is stored in a partner list accessable to the particular entity. Thereafter, the open and interoperable single sign-on session may be provided upon receipt of a SAML request or assertion containing an entity identifier. The entity identifier contained in the SAML request or assertion is looked-up in the partner list of the particular entity which received the SAML request or assertion. A record containing a matching entity identifier provides the applicable account mapping, attribute mapping, site attribute list, and/or action mapping. The one or more mappings are then utilized to process the SAML request or assertion.