Hua Jiang, 523 Bentas Pl, Kates Corner, MA 01824

6404538, Jun 11, 2002

Oct 24, 2000

09/695538

Qiushui Chen - Medford MA
Gary Y. Wang - Fremont CA
Paul Melman - Newton MA
Kevin Zou - Burlington MA
Hua Jiang - Mansfield MA
Run Zhang - Bedford MA
Jing Zhao - Winchester MA
Dean Tsang - Burlington MA
Feiling Wang - Medford MA

Corning Applied Technologies Corporation - Woburn MA

G02F 100

359323, 359239, 359251, 359322

An optical modulator is provided to control the intensity of a transmitted or reflected light. In a transmission mode, a separator splits arbitrarily polarized light into two polarization rays and one is made to travel a separate path from the other. A recombiner causes the two rays to recombine at an output unless an electro-optic phase retarder changes the polarization of the two rays, in which case, both of them miss the output by an amount which is a function of the voltage on the retarder. A normally-off version with low polarization mode dispersion is obtained by changing the orientation of the recombiner. A normally-on version with low polarization mode dispersion is obtained with a passive polarization direction rotator. Similar results can be obtained in a reflection mode where the input and output are on the same side of the modulator. Versions using a GRIN lens are particularly suited to modulation of light out of and back into fiber-optic cables.

6498549, Dec 24, 2002

Dec 7, 1999

09/457430

Hua Jiang - Mansfield MA
Wei Hu - Cambridge MA
Shaohua Liang - Somerset NJ
Yi-Qun Li - Orinda CA
Vladimir Fuflyigin - Winchester MA
Jiankang Huang - Cambridge MA

Corning Applied Technologies Corporation - Woburn MA

H01P 120

333202, 333156, 333161

A ferroelectric layer is deposited or in close proximity to a ferromagnetic ferrite layer to make a microwave substrate on which conductors can be deposited or placed to make devices. The permittivity of the ferroelectric layer can be changed by applying a voltage and the permeability of the ferromagnetic layer can be changed with a magnetic field. This makes it possible to tune the device characteristics with two different effects taking best advantage of the capabilities of each. A material example is ferromagnetic yttrium-iron-garnet on which is deposited a thin film of ferroelectric barium strontium titanate. To minimize losses, the ferroelectric film should be high quality, but practical yttrium-iron-garnet substrates are polycrystalline so that the use of buffer layers is desirable. At least two methods can be used to deposit the ferroelectric film, pulsed laser deposition and metal-organic chemical liquid deposition. A variety of dual tunable microwave devices can be made with this substrate, including by way of example only, phase shifters, frequency filters, and resonators.

6522456, Feb 18, 2003

May 4, 2001

09/848766

Qiushui Chen - Medford MA
Hua Jiang - Mansfield MA
Yingyin Zou - Burlington MA
Dean Tsang - Burlington MA
Paul Melman - Newton MA
Feiling Wang - Medford MA
Guanghai Jin - Boxborough MA
Jing Zhao - Winchester MA

Corning Applied Technologies, Inc. - Woburn MA
Corning Incorporated - Corning NY

G02F 100

359322, 359239, 359245, 359246, 359248, 359256, 359323

An apparatus and method for filtering an optical input is disclosed. In an illustrative embodiment, an optical input is split into polarization components along separate paths. The polarization components are then fed into a first electro-optic device that includes a set of electrodes across which a voltage is applied to adjust a wavelength transmission characteristic of the device. A section of the first device positioned between the electrodes preferably has a birefringence that is adjusted depending on the voltage applied across the electrodes. The adjusted components of the optical input are thereafter combined to produce an optical output. Accordingly, the optical input can be attenuated based on the voltage applied to electrodes of the first electro-optic device.

6798550, Sep 28, 2004

Nov 17, 2000

09/715867

Feiling Wang - Medford MA
Kewen Kevin Li - Andover MA
Dean Tsang - Burlington MA
Hua Jiang - Mansfield MA

Corning Applied Technologies Corporation - Woburn MA

G02F 103

359245, 359254, 359248, 359260

A modulator formed with a solid state electro-optic material having a pixellated structure interconnected to a circuit on a semiconductor substrate. Silicon CMOS integrated circuit that can include random access memories (RAMs) are used as a substrate and interfaced to solid state electro-optic materials coated thereon. In particular, the electro-optic modulators are controlled by RAM cells to produce a modulation of reflected light. SRAMs can be used with connection to the SRAM cell flip-flop. DRAMs can be used with the modulator replacing the DRAM storage capacitor. The SLM thus formed can be connected to a digital computer and controlled as if were a being written to as a memory, but other IC structures can also be used. In order to enhance the modulation effects, the electro-optic material is used as the spacer for a Fabry-Perot etalon structure that is also deposited on the semiconductor substrate. PLZT is a suitable electro-optic material.

7068688, Jun 27, 2006

Nov 4, 2003

10/700934

Yingyin Zou - Burlington MA, US
Qiushui Chen - Medford MA, US
Run Zhang - Acton MA, US
Hua Jiang - Mansfield MA, US

Boston Applied Technologies, Incorporated - Woburn MA

H01S 3/115

372 12

An electro-optic Q-switch for generating sequence of laser pulses was disclosed. The Q-switch comprises a quadratic electro-optic material and is connected with an electronic unit generating a radio frequency wave with positive and negative pulses alternatively. The Q-switch is controlled by the radio frequency wave in such a way that laser pulse is generated when the radio frequency wave changes its polarity.

7791791, Sep 7, 2010

Jul 10, 2007

11/825995

Hua Jiang - Sharon MA, US
Yingyin Kevin Zou - Lexington MA, US
Kewen Kevin Li - Andover MA, US

Boston Applied Technologies, Incorporated - Woburn MA

H01S 3/00

359333, 501134, 385141

The present invention provides a rare-earth ions doped, especially erbium and ytterbium doped transparent electro-optic gain ceramic material consisting lead, zirconium, titanium and lanthanum. The electro-optic gain ceramic material either has a linear electro-optic coefficient or a quadratic electro-optic coefficient, which is greater than about 0. 3×10m/Vfor the latter, a propagation loss of less than about 0. 3 dB/mm, and an optical gain of great than 1. 5 dB/mm at a wavelength of about 1550 nm while optically pumped by a 1. 4 watts diode laser at a wavelength of 970 nm at 20 C. The present invention also provides electro-optic devices including a rare-earth ions doped, especially erbium and ytterbium doped, transparent electro-optic gain ceramic material consisting lead, zirconium, titanium and lanthanum. The present invention also provides lossless optical devices and amplifiers with an operating wavelength in the range of 1450 nm to 1700 nm while optically pumped at a wavelength in the range of 880 nm to 1020 nm. The materials and devices of the present invention are useful in light intensity, phase and polarization control at a wavelength of about 1550 nm.

8088499, Jan 3, 2012

Oct 30, 2006

11/589338

Qingwu Wang - Chelmsford MA, US
Wenguang Li - Andover MA, US
Hua Jiang - Methuen MA, US

Agiltron, Inc. - Woburn MA

H01L 51/50

428690, 428917, 257 40, 313504, 313505, 313506

An optoelectronic device is disclosed that can function as an emitter of optical radiation, such as a light-emitting diode (LED), or as a photovoltaic (PV) device that can be used to convert optical radiation into electrical current, such as a photovoltaic solar cell. The optoelectronic device comprises an anode, a hole injection/transport layer, an active layer, and a cathode, where the hole injection/transport layer includes transparent conductive nanoparticles in a hole transport material.

8124254, Feb 28, 2012

Dec 18, 2007

12/002585

Yingyin Kevin Zou - Lexington MA, US
Hua Jiang - Sharon MA, US
Kewen Kevin Li - Andover MA, US
Xiaomei Guo - West Roxbury MA, US

Boston Applied Technologies, Inc - Woburn MA

G11B 5/66

428817, 360131, 365 64, 365 65, 365 66, 365145

A heterostructure of multiferroics or magnetoelectrics (ME) was disclosed. The film has both ferromagnetic and ferroelectric properties, as well as magneto-optic (MO) and electro-optic (EO) properties. Oxide buffer layers were employed to allow grown a cracking-free heterostructure a solution coating method.