BackgroundCheck.run
Search For

Tony S Huang, 737044 Falling Water Ln, Plano, TX 75024

Known as:
Tony Shih Huang Tony Shih Shi Huang Tony S Huangshih Tony Tittrington
Related to:
Maria Andrea Garcia 61

Tony Huang Phones & Addresses

7044 Falling Water Ln, Plano, TX 75024    214-4692260    972-4077763   

4204 Mildenhall Dr, Plano, TX 75093    972-3983122    972-6125691    972-6127310   

Richardson, TX   

Garland, TX   

6618 La Manga Dr, Dallas, TX 75248    972-2506655   

Rockwall, TX   

Washington, DC   

Selinsgrove, PA   

Allentown, PA   

San Jose, CA   

Get Report
Control this profile

Mentions for Tony S Huang

Career records & work history

Medicine Doctors

Tony T. Huang

Specialties:
Obstetrics & Gynecology, Dermatology
Work:
Tony T Huang MD
40 W Palisade Ave STE 208, Englewood, NJ 07631
201-5688888 (phone) 201-5683888 (fax)
Education:
Medical School
Mount Sinai School of Medicine
Graduated: 1987
Conditions:
Abnormal Vaginal Bleeding, Breast Disorders, Conditions of Pregnancy and Delivery, Herpes Genitalis, Menopausal and Postmenopausal Disorders
Languages:
Chinese, English, Spanish
Description:
Dr. Huang graduated from the Mount Sinai School of Medicine in 1987. He works in Englewood, NJ and specializes in Obstetrics & Gynecology and Dermatology. Dr. Huang is affiliated with Hackensack University Medical Center.

Publications & IP owners

Us Patents

Trench Devices Having Improved Breakdown Voltages And Method For Manufacturing Same

US Patent:
8314471, Nov 20, 2012
Filed:
Nov 17, 2009
Appl. No.:
12/620473
Inventors:
Chiao-Shun Chuang - Kaohsiung, TW
Tony Huang - Plano TX, US
Assignee:
Diodes Incorporated - Plano TX
International Classification:
H01L 29/02
US Classification:
257488, 257496, 257E29009, 257E29011, 257330, 257334, 257E2141, 257E29262, 257E21655, 438270, 438259
Abstract:
In one embodiment, the present invention includes a semiconductor power device. The semiconductor power device comprises a trenched gate and a trenched field region. The trenched gate is disposed vertically within a trench in a semiconductor substrate. The trenched field region is disposed vertically within the trench and below the trenched gate. A lower portion of the trenched field region tapers to disperse an electric field.

Trench Devices Having Improved Breakdown Voltages And Method For Manufacturing Same

US Patent:
2014005, Feb 27, 2014
Filed:
Oct 8, 2012
Appl. No.:
13/646906
Inventors:
Chiao-Shun Chuang - Hsinchu, TW
Tony Huang - Plano TX, US
International Classification:
H01L 29/78
US Classification:
257330
Abstract:
In one embodiment, the present invention includes a semiconductor power device. The semiconductor power device comprises a trenched gate and a trenched field region. The trenched gate is disposed vertically within a trench in a semiconductor substrate. The trenched field, region is disposed vertically within the trench and below the trenched gate. A lower portion of the trenched field region tapers to dispose an electric field.

Possible Relatives

Cynthia M Huang  David T Huang  Dawei Huang  Dayong Huang  Da Huang  Daijie D Huang  Daisy Huang  Tony L Johnson  Tony R Standifer  Tony L Standridge 

NOTICE: You may not use BackgroundCheck or the information it provides to make decisions about employment, credit, housing or any other purpose that would require Fair Credit Reporting Act (FCRA) compliance. BackgroundCheck is not a Consumer Reporting Agency (CRA) as defined by the FCRA and does not provide consumer reports.