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Iraj Emami706 Walnut St, Calvin, TX 78602

Iraj Emami Phones & Addresses

706 Walnut St, Bastrop, TX 78602    512-3089968   

1 Old Stable Ln, Austin, TX 78746   

West Lake Hills, TX   

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Iraj Emami

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Work

Company: Christopher david homes Feb 1, 2013 Position: President

Education

Degree: Master of Science, Masters School / High School: Texas A&M University - Commerce 1976 to 1998 Specialities: Chemistry

Skills

Semiconductors • Design of Experiments • Semiconductor Industry • Thin Films • Failure Analysis • Manufacturing • Metrology • Cross Functional Team Leadership • Engineering • Characterization • Six Sigma • Spc • Engineering Management • Materials • Process Engineering • Electronics • Nanotechnology • Product Development • Ic • R&D • Materials Science • Physics • Testing • Product Marketing • Process Simulation • Analog • Simulations • Root Cause Analysis • Solar Energy • Sensors • Fmea • Photovoltaics • Jmp • Product Engineering • Reliability • Manufacturing Operations • Technology Transfer • Circuit Design

Industries

Construction

Mentions for Iraj Emami

Iraj Emami resumes & CV records

Resumes

Iraj Emami Photo 11

President

Location:
Austin, TX
Industry:
Construction
Work:
Christopher David Homes
President
Amd Manufacturing 1980 - 2007
Amd Fellow
Amd 1980 - 2007
Amd Fellow
Mostek Corp 1979 - 1980
Process Engineer
Education:
Texas A&M University - Commerce 1976 - 1998
Master of Science, Masters, Chemistry
University of North Texas
Skills:
Semiconductors, Design of Experiments, Semiconductor Industry, Thin Films, Failure Analysis, Manufacturing, Metrology, Cross Functional Team Leadership, Engineering, Characterization, Six Sigma, Spc, Engineering Management, Materials, Process Engineering, Electronics, Nanotechnology, Product Development, Ic, R&D, Materials Science, Physics, Testing, Product Marketing, Process Simulation, Analog, Simulations, Root Cause Analysis, Solar Energy, Sensors, Fmea, Photovoltaics, Jmp, Product Engineering, Reliability, Manufacturing Operations, Technology Transfer, Circuit Design

Publications & IP owners

Us Patents

Drop-In Test Structure And Methodology For Characterizing An Integrated Circuit Process Flow And Topography

US Patent:
6452412, Sep 17, 2002
Filed:
Mar 4, 1999
Appl. No.:
09/262238
Inventors:
Richard W. Jarvis - Austin TX
Iraj Emami - Austin TX
Charles E. May - Gresham OR
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
G01R 3126
US Classification:
324765, 438 17
Abstract:
A drop-in test structure fabricated upon a production integrated circuit elevational profile and a method for using the drop-in test structure for characterizing an integrated circuit production methodology are described. The test structure may be fabricated upon an integrated circuit elevational profile formed according to a subset of steps within a sequence of steps of the integrated circuit production methodology that culminates in a production integrated circuit intended for use by a consumer. According to an embodiment, the integrated circuit elevational profile may be fabricated according to a majority of the sequence of steps. Alternatively, the integrated circuit elevational profile may be fabricated according to a minority of the sequence of steps. The test structure may be fabricated upon die sites designated to receive the test structure. Alternatively, the test structure may be fabricated upon die sites otherwise intended for operable integrated circuits.

Use Of Contamination-Free Manufacturing Data In Fault Detection And Classification As Well As In Run-To-Run Control

US Patent:
6560504, May 6, 2003
Filed:
Sep 29, 1999
Appl. No.:
09/408241
Inventors:
Thomas J. Goodwin - Austin TX
Iraj Emami - Austin TX
Charles E. May - Gresham OR
Assignee:
Advanced Micro Devices, Inc. - Austin TX
International Classification:
G06F 1900
US Classification:
700121, 438 14
Abstract:
A method is provided for manufacturing, the method including processing a workpiece in a processing step, detecting defect data after the processing of the workpiece in the processing step has begun and forming an output signal corresponding to at least one type of defect based on the defect data. The method also includes feeding back a control signal based on the output signal to adjust the processing performed in the processing step to reduce the at least one type of defect.

Real Time Immersion Medium Control Using Scatterometry

US Patent:
7158896, Jan 2, 2007
Filed:
Nov 1, 2004
Appl. No.:
10/978604
Inventors:
Bhanwar Singh - Morgan Hill CA, US
Khoi A. Phan - San Jose CA, US
Ramkumar Subramanian - Sunnyvale CA, US
Bharath Rangarajan - Sunnyvale CA, US
Iraj Emami - Austin TX, US
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
G06F 19/00
US Classification:
702 31, 700120, 700121, 438 5, 438 7, 438 14, 438 16
Abstract:
Systems and/or methods are disclosed for measuring and/or controlling an amount of impurity that is dissolved within an immersion medium employed with immersion lithography. The impurity can be photoresist from a photoresist layer coated upon a substrate surface. A known grating structure is built upon the substrate. A real time immersion medium monitoring component facilitates measuring and/or controlling the amount of impurities dissolved within the immersion medium by utilizing light scattered from the known grating structure.

Composite Alignment Mark Scheme For Multi-Layers In Lithography

US Patent:
7221060, May 22, 2007
Filed:
Mar 8, 2005
Appl. No.:
11/074602
Inventors:
Bhanwar Singh - Morgan Hill CA, US
Khoi A. Phan - San Jose CA, US
Bharath Rangarajan - Sunnyvale CA, US
Iraj Emami - Austin TX, US
Ramkumar Subramanian - Sunnyvale CA, US
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
H01L 23/544
US Classification:
257797, 438462, 365150
Abstract:
Systems and/or methods are disclosed for aligning multiple layers of a multi-layer semiconductor device fabrication process and/or system utilizing a composite alignment mark. A component is provided to form the composite alignment mark, such that a first portion of the composite alignment mark is associated with a layer of the wafer and a second portion of the composite alignment mark is associated with a disparate layer of the wafer. An alignment component is utilized to align a reticle for a layer to be patterned to the composite alignment mark.

Optimizing Critical Dimension Uniformity Utilizing A Resist Bake Plate Simulator

US Patent:
7334202, Feb 19, 2008
Filed:
Jun 3, 2005
Appl. No.:
11/145327
Inventors:
Bhanwar Singh - Morgan Hill CA, US
Qiaolin Zhang - Albany CA, US
Iraj Emami - Austin TX, US
Joyce S. Oey Hewett - Austin TX, US
Luigi Capodiece - Santa Cruz CA, US
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
G06F 17/50
US Classification:
716 4
Abstract:
A system for optimizing critical dimension uniformity in semiconductor manufacturing processes is provided. The system comprises a bake plate simulator to model a physical bake plate. A finite element analysis engine uses information from the bake plate simulator to calculate missing information. A lithography simulator predicts outcomes of a lithography process using information from the bake plate simulator and the finite element analysis engine. The system can be used in a predictive capacity or as part of a process control system.

Transistor Gate Shape Metrology Using Multiple Data Sources

US Patent:
7373215, May 13, 2008
Filed:
Aug 31, 2006
Appl. No.:
11/469206
Inventors:
Jason Phillip Cain - Sunnyvale CA, US
Bhanwar Singh - Morgan Hill CA, US
Iraj Emami - Austin TX, US
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
G06F 19/00
US Classification:
700121, 700 29
Abstract:
The claimed subject matter can provide a mechanism for ascertaining a variety of metrological data relating to one or more features (e. g. , a transistor gate) of a chip/wafer. In addition, results of electrical testing on the chip/wafer can also be gathered and, together with the metrological data, input to a data store. From the information in the data store, a three-dimensional model for the feature(s) of the chip/wafer can be constructed and subjected to analysis, testing, and/or simulation. As well, the three-dimensional model can be optimized and an optimized three-dimensional model can be employed to affect process control in a feedback/forward manner, e. g. , to apply optimizations to the next or the current wafer, respectively. Accordingly, the disclosed mechanisms may be used to optimize semiconductor performance, yield, or for research and development. In addition the three-dimensional model may be used in analysis, simulation, or debugging software.

Scanner Optimization For Reduced Across-Chip Performance Variation Through Non-Contact Electrical Metrology

US Patent:
7460922, Dec 2, 2008
Filed:
Dec 7, 2005
Appl. No.:
11/298340
Inventors:
Bhanwar Singh - Morgan Hill CA, US
Jason Phillip Cain - Sunnyvale CA, US
Harish Kumar Bolla - Sunnyvale CA, US
Iraj Emami - Austin TX, US
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
G06F 19/00
US Classification:
700121, 700 98, 438 40
Abstract:
The disclosed embodiments reduce across-chip performance variation through non-contact electrical metrology. According to a feature is a process control system that includes a component that measures transistor electrical performance in a product wafer. Also included in the system is a mapping component that converts the transistor performance into exposure dose values and a process tool that communicates the exposure dose value to a scanner. The exposure dose value is fed back for optimization of future chip exposures. The disclosed embodiments directly optimize transistor performance, thus controlling an important parameter in many integrated circuits.

Fractal Filter Applied To A Contamination-Free Manufacturing Signal To Improve Signal-To-Noise Ratios

US Patent:
6242273, Jun 5, 2001
Filed:
Sep 29, 1999
Appl. No.:
9/408232
Inventors:
Thomas J. Goodwin - Austin TX
Iraj Emami - Austin TX
Charles E. May - Gresham OR
Assignee:
Advanced Micro Devices, Inc. - Austin TX
International Classification:
H01L 2166
G01R 3126
US Classification:
438 14
Abstract:
A method is provided for manufacturing, the method including processing a workpiece in a processing step and detecting defect data after the processing of the workpiece in the processing step has begun. The method also includes filtering the defect data using a fractal filter and forming an output signal corresponding to at least one type of defect based on the fractally filtered defect data. The method further includes feeding back a control signal based on the output signal to adjust the processing performed in the processing step to reduce the at least one type of defect.

Isbn (Books And Publications)

Data Analysis And Modeling For Process Control Iii: 23 February, 2006, San Jose, California, Usa

Author:
Iraj Emami
ISBN #:
0819461989

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