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Jinju Lee, 56Midlothian, TX

Jinju Lee Phones & Addresses

Mansfield, TX   

Champaign, IL   

Keller, TX   

Savoy, IL   

502 Green St, Urbana, IL 61801   

Haworth, NJ   

4511 Crossgate Dr, Champaign, IL 61822    217-4152520   

Work

Position: Executive, Administrative, and Managerial Occupations

Education

Degree: Bachelor's degree or higher

Mentions for Jinju Lee

Jinju Lee resumes & CV records

Resumes

Jinju Lee Photo 27

Jinju Lee

Jinju Lee Photo 28

Jinju Lee

Skills:
Informatica

Publications & IP owners

Us Patents

Deuterium Treatment Of Semiconductor Devices

US Patent:
2002003, Mar 14, 2002
Filed:
May 7, 2001
Appl. No.:
09/850920
Inventors:
Joseph Lyding - Champaign IL, US
Karl Hess - Champaign IL, US
Jinju Lee - Urbana IL, US
International Classification:
H01L029/76
H01L021/336
H01L029/94
H01L031/062
H01L031/113
H01L031/119
H01L021/324
H01L021/42
H01L021/477
US Classification:
438/795000, 257/410000, 438/798000
Abstract:
Semiconductor device annealing process with deuterium at superatmospheric pressures to improve reduction of the effects of hot carrier stress during device operation, and devices produced thereby.

Deuterium Treatment Of Semiconductor Device

US Patent:
2003021, Nov 27, 2003
Filed:
Jul 24, 2002
Appl. No.:
10/202187
Inventors:
Joseph Lyding - Champaign IL, US
Karl Hess - Champaign IL, US
Jinju Lee - Urbana IL, US
International Classification:
H01L021/336
H01L021/26
H01L021/324
H01L021/42
H01L021/477
US Classification:
438/301000, 438/308000, 438/795000
Abstract:
Semiconductor device annealing process with deuterium at superatmospheric pressures to improve reduction of the effects of hot carrier stress during device operation, and devices produced thereby.

Scanning Probe And Electron Microscope Probes And Their Manufacture

US Patent:
2019021, Jul 18, 2019
Filed:
Aug 9, 2017
Appl. No.:
16/327827
Inventors:
- West Chester PA, US
Gregory S. Girolami - Urbana IL, US
Scott P. Lockledge - West Chester PA, US
Jinju Lee - Champaign IL, US
International Classification:
G01Q 70/10
H01J 37/28
G01Q 60/00
G01Q 60/16
G01Q 70/16
Abstract:
Methods are described for the economical manufacture of Scanning Probe and Electron Microscope (SPEM) probe tips. In this method, multiple wires are mounted on a stage and ion milled simultaneously while the stage and mounted probes are tilted at a selected angle relative to the ion source and rotated. The resulting probes are also described. The method provides sets of highly uniform probe tips having controllable properties for stable and accurate scanning probe and electron microscope (EM) measurements.

Scanning Probe And Electron Microscope Probes And Their Manufacture

US Patent:
2018032, Nov 15, 2018
Filed:
Jul 20, 2018
Appl. No.:
16/041731
Inventors:
- West Chester PA, US
Gregory S. Girolami - Urbana IL, US
Scott P. Lockledge - West Chester PA, US
Jinju Lee - Champaign IL, US
International Classification:
G01Q 70/10
H01J 37/28
G01Q 70/16
G01Q 60/00
G01Q 60/16
Abstract:
Methods are described for the economical manufacture of Scanning Probe and Electron Microscope (SPEM) probe tips. In this method, multiple wires are mounted on a stage and ion milled simultaneously while the stage and mounted probes are tilted at a selected angle relative to the ion source and rotated. The resulting probes are also described. The method provides sets of highly uniform probe tips having controllable properties for stable and accurate scanning probe and electron microscope (EM) measurements.

Scanning Probe And Electron Microscope Probes And Their Manufacture

US Patent:
2018004, Feb 15, 2018
Filed:
Aug 12, 2016
Appl. No.:
15/235889
Inventors:
- West Chester PA, US
Gregory S. Girolami - Urbana IL, US
Scott P. Lockledge - West Chester PA, US
Jinju Lee - Champaign IL, US
International Classification:
G01Q 70/10
G01Q 60/00
Abstract:
Methods are described for the economical manufacture of Scanning Probe and Electron Microscope (SPEM) probe tips. In this method, multiple wires are mounted on a stage and ion milled simultaneously while the stage and mounted probes are tilted at a selected angle relative to the ion source and rotated. The resulting probes are also described. The method provides sets of highly uniform probe tips having controllable properties for stable and accurate scanning probe and electron microscope (EM) measurements.

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