James A Moreland, 78300 88Th Ave, Portland, OR 97229

7052948, May 30, 2006

Jun 27, 2002

10/481537

Brian Murphy - Pfarrkirchen, DE
Reinhold Wahlich - Tittmoning, DE
Rüdiger Schmolke - Burghausen, DE
Wilfried Von Ammon - Hochburg/Ach, AT
James Moreland - Portland OR, US

Siltronic AG - Munich

H01L 21/8238

438219, 438456, 438458, 257347

The invention relates to a film or a layer made of semi-conducting material with low defect density in the thin layer, and a SOI-disk with a thin silicon layer exhibiting low surface roughness, defect density and thickness variations. The invention also relates to a method for producing a film or a layer made of semi-conductive material. Said method comprises the following steps: a) producing structures from a semi-conductive material with periodically repeated recesses which have a given geometrical structure, b) thermally treating the surface structured material until a layer with periodically repeated hollow spaces is formed under a closed layer on the surface of the material, c) separating the closed layer on the surface along the layer of hollow spaces from the remainder of the semi-conductive material.

7417297, Aug 26, 2008

Mar 20, 2006

11/384887

Brian Murphy - Pfarrkirchen, DE
Reinhold Wahlich - Tittmoning, DE
Rüdiger Schmolke - Burghausen, DE
Wilfried Von Ammon - Hochburg/Ach, AT
James Moreland - Portland OR, US

Siltronic AG - Munich

H01L 29/06

257506, 257347, 257499, 257618, 257E27001

SOI wafers are manufactured to have very thin device layers of high surface quality. The layer is ≦20 nm in thickness, has an HF density of ≦0. 1/cm, and a surface roughness of 0. 2 nm RMS.