Janusz K Nowak, 921913 Canterbury Cir, Fort Worth, TX 76112

7453084, Nov 18, 2008

May 24, 2005

11/136282

Janusz J. Nowak - Mahopac NY, US
Brian W. Karr - Savage MN, US
David H. Olson - St. Paul MN, US
Eric S. Linville - Chanhassen MN, US
Paul E. Anderson - Eden Prairie MN, US

Seagate Technology LLC - Scotts Valley CA

H01L 43/00

257 30, 257295, 257423, 257E43004, 977935

A transistor has an emitter, a spin-selective base, a collector, a first barrier interposed between the spin-selective base and the emitter, a second barrier interposed between the spin-selective base and the collector, and a transfer ratio of more than 10.

7505337, Mar 17, 2009

Jan 12, 2006

11/330493

Janusz Jozef Nowak - Highland Mills NY, US
Mark Curtis Hayes Lamorey - South Burlington VT, US
Yu Lu - Hopewell Junction NY, US

International Business Machines Corporation - Armonk NY

G11C 29/00

365200, 365158, 36518502

A method for repairing a shorted tunnel device includes the step of applying a stressing signal to the tunnel device. The stressing signal has an amplitude that is greater than an amplitude of a bias signal applied to the device during normal operation. One or more characteristics of the stressing signal are selected so as to substantially optimize a repair of the device. The amplitude and/or the duration of the stressing signal are preferably selected so as to remove a conductive filament shorting the device via a thermal mechanism (e. g. , heating).

7782660, Aug 24, 2010

Mar 20, 2008

12/052326

Solomon Assefa - Ossining NY, US
Sivananda K. Kanakasabapathy - Niskayuna NY, US
Janusz Jozef Nowak - Highland Mills NY, US
Philip L Trouilloud - Norwood NJ, US

International Business Machines Corporation - Armonk NY

G11C 11/00

365158, 365171, 365173

Techniques for shielding magnetic memory cells from magnetic fields are presented. In accordance with aspects of the invention, a magnetic storage element is formed with at least one conductive segment electrically coupled to the magnetic storage element. At least a portion of the conductive segment is surrounded with a magnetic liner. The magnetic liner is operative to divert at least a portion of a magnetic field created by a current passing through the conductive segment away from the magnetic storage element.

8270208, Sep 18, 2012

Feb 8, 2010

12/701867

Michael C. Gaidis - Yorktown Heights NY, US
Janusz J. Nowak - Hopewell Junction NY, US
Jonathan Z. Sun - Yorktown Heights NY, US

International Business Machines Corporation - Armonk NY

G11C 11/00

365158, 365171

A spin-torque based memory device includes a write portion including a fixed ferromagnetic spin-polarizing layer, a spin-transport layer having a spin accumulation region formed above the fixed ferromagnetic spin-polarizing layer. The memory device further includes a read portion in electrical contact with the spin-transport layer. The read portion includes a free layer magnet, a read non-magnetic layer, and a reference layer. The memory device further includes a metal contact region formed overlying the read portion and a nonlinear resistor formed between an upper surface of the spin transport layer and the metal contact region and modulating write and read current paths depending on an applied voltage, thereby creating different current paths for write and read processes.

2007020, Aug 30, 2007

Feb 28, 2006

11/364315

Janusz Nowak - Highland Mills NY, US
Yu Lu - Hopewell Junction NY, US

International Business Machines Corporation - Armonk NY

H01L 29/12

257613000

A PCM structure configurable for use as a nonvolatile storage element includes a first electrode, a first phase change material layer formed on at least a portion of an upper surface of the first electrode, at least one insulating layer formed on an upper surface of the first phase change material layer, at least a second phase change material layer formed on an upper surface of the at least first insulating layer, and a second electrode formed on at least a portion of an upper surface of the at least second phase change material layer. The insulating layer is configurable for forming an aperture therethrough in response to a first signal of a prescribed level applied between the first and second electrodes, the aperture constricting a flow of current in the PCM structure to thereby create a region of localized heating in the first and second phase change material layers in response to a second signal applied between the first and second electrodes.

2012024, Sep 27, 2012

Mar 24, 2011

13/071043

Guohan Hu - Yorktown Heights NY, US
Janusz J. Nowak - Highland Mills NY, US
Philip L. Trouilloud - Norwood NJ, US
Daniel C. Worledge - Cortlandt Manor NY, US

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

H01L 29/82
H01L 21/8239

257421, 438 3, 257E29323, 257E21665

A magnetic tunnel junction (MTJ) for a magnetic random access memory (MRAM) includes a magnetic free layer having a variable magnetization direction; an iron (Fe) dusting layer formed on the free layer; an insulating tunnel barrier formed on the dusting layer; and a magnetic fixed layer having an invariable magnetization direction, disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer; wherein the free layer and the fixed layer have perpendicular magnetic anisotropy and are magnetically coupled through the tunnel barrier.

2012026, Oct 25, 2012

Apr 25, 2011

13/093287

Guohan Hu - Yorktown Heights NY, US
Janusz J. Nowak - Highland Mills NY, US
Daniel C. Worledge - Cortlandt Manor NY, US

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

H01L 29/82
H01L 21/8239

257421, 438 3, 257E29323, 257E21665

A magnetic tunnel junction (MTJ) includes a magnetic free layer, having a variable magnetization direction; an insulating tunnel barrier located adjacent to the free layer; a magnetic fixed layer having an invariable magnetization direction, the fixed layer disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer, wherein the free layer and the fixed layer have perpendicular magnetic anisotropy; and one or more of: a composite fixed layer, the composite fixed layer comprising a dusting layer, a spacer layer, and a reference layer; a synthetic antiferromagnetic (SAF) fixed layer structure, the SAF fixed layer structure comprising a SAF spacer located between the fixed layer and a second fixed magnetic layer; and a dipole layer, wherein the free layer is located between the dipole layer and the tunnel barrier.

2012028, Nov 15, 2012

Jul 18, 2012

13/552033

Michael C. Gaidis - Yorktown Heights NY, US
Janusz J. Nowak - Hopewell Junction NY, US
Jonathan Z. Sun - Yorktown Heights NY, US

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY

H01L 21/8246

438 3, 257E21665

A fabrication method includes forming a spin-polarizing layer, a spin transport layer on the spin polarizing layer on a substrate, a free layer magnet on the spin transport layer, a non-magnetic layer on the spin polarizing layer, a reference layer on the non-magnetic layer, and a hard mask layer on the reference layer, etching the hard mask layer and forming a read portion including the reference layer, the nonmagnetic layer and the free layer magnet, forming a nonlinear resistor layer on surfaces of the spin transport layer, the spacers, and the hard mask layer, etching the nonlinear resistor layer, the spin transport layer, and the spin polarizing layer and forming a write portion including the spin transport layer and the spin polarizing layer, forming an interlevel dielectric layer, forming a trench, exposing an upper surface of the reference layer of the read and write portions.