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Jason C Kirkwood, 511545 Broadway UNIT 104, San Francisco, CA 94109

Related to:
Dan Kirkwood Wm E Kirkwood 97

Jason Kirkwood Phones & Addresses

950 High School Way APT 3237, Mountain View, CA 94041   

San Francisco, CA   

500 Mansion Ct, Santa Clara, CA 95054    408-7279851   

600 Park View Dr, Santa Clara, CA 95054    408-7279851   

1795 South Ave, Rochester, NY 14620    716-4613390   

Seekonk, MA   

Ithaca, NY   

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Jason Kirkwood resumes & CV records

Resumes

Jason Kirkwood Photo 23

Assistant Manager

Location:
San Francisco, CA
Industry:
Automotive
Work:
Enterprise Rent-A-Car
Assistant Manager
Jason Kirkwood Photo 24

Jason Kirkwood

Location:
Santa Clara, CA
Industry:
Semiconductors
Work:
Kla-Tencor Dec 2000 - Mar 2012
Principal Scientist University of Rochester 1999 - 2000
Research Scientist
Education:
Cornell University 1998 - 1999
Associates Cornell University 1995 - 1998
Doctorates, Doctor of Philosophy, Physics Rensselaer Polytechnic Institute 1991 - 1995
Bachelors, Bachelor of Science, Chemistry
Skills:
Optics, Laser Physics, Algorithms, Semiconductors, Systems Engineering, Image Processing, Signal Processing, Ccd Sensors, Spectroscopy, System Architecture, Metrology, Thin Films, Characterization
Jason Kirkwood Photo 25

Jason Kirkwood

Jason Kirkwood Photo 26

Jason Kirkwood

Jason Kirkwood Photo 27

Jason Kirkwood

Jason Kirkwood Photo 28

Jason Kirkwood

Jason Kirkwood Photo 29

Software Engineer At Easystreet Online Services

Position:
Software Engineer at EasyStreet Online Services
Location:
Portland, Oregon
Industry:
Semiconductors
Work:
EasyStreet Online Services - Beaverton, OR since Sep 2012
Software Engineer Siltronic AG Nov 2006 - Sep 2012
Software Engineer Siltronic AG May 2000 - Nov 2006
Process Engineer
Education:
Michigan Technological University 1994 - 1999
B.S. Engineering, Chemical Engineering
Skills:
Engineering Management, Failure Analysis, Process Control, Automation, Lean Manufacturing, Testing, C#, Silicon, Process Improvement, Troubleshooting, Technical Writing, Requirements Analysis, SQL, Visual Basic, Chemical Engineering

Publications & IP owners

Us Patents

Computer-Implemented Methods, Carrier Media, And Systems For Selecting Polarization Settings For An Inspection System

US Patent:
8049877, Nov 1, 2011
Filed:
May 14, 2008
Appl. No.:
12/120577
Inventors:
Richard Wallingford - San Jose CA, US
Stephanie Chen - Fremont CA, US
Jason Kirkwood - Santa Clara CA, US
Tao Luo - Fremont CA, US
Yong Zhang - Cupertino CA, US
Lisheng Gao - Morgan Hill CA, US
Assignee:
KLA-Tencor Corp. - San Jose CA
International Classification:
G01N 21/00
US Classification:
3562372, 356364
Abstract:
Computer-implemented methods, carrier media, and systems for selecting polarization settings for an inspection system for inspection of a layer of a wafer are provided. One method includes detecting a population of defects on the layer of the wafer using results of each of two or more scans of the wafer performed with different combinations of polarization settings of the inspection system for illumination and collection of light scattered from the wafer. The method also includes identifying a subpopulation of the defects for each of the different combinations, each of which includes the defects that are common to at least two of the different combinations, and determining a characteristic of a measure of signal-to-noise for each of the subpopulations. The method further includes selecting the polarization settings for the illumination and the collection to be used for the inspection corresponding to the subpopulation having the best value for the characteristic.

Systems And Methods For Detecting Defects On A Wafer

US Patent:
8223327, Jul 17, 2012
Filed:
Jan 26, 2009
Appl. No.:
12/359476
Inventors:
Lu Chen - Sunnyvale CA, US
Jason Kirkwood - Santa Clara CA, US
Mohan Mahadevan - Livermore CA, US
James A. Smith - Los Altos CA, US
Lisheng Gao - Morgan Hill CA, US
Junqing (Jenny) Huang - Fremont CA, US
Tao Luo - Fremont CA, US
Richard Wallingford - San Jose CA, US
Assignee:
KLA-Tencor Corp. - San Jose CA
International Classification:
G01N 21/00
US Classification:
3562372, 3562373
Abstract:
Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.

Systems And Methods For Detecting Defects On A Wafer

US Patent:
8467047, Jun 18, 2013
Filed:
Jul 3, 2012
Appl. No.:
13/541579
Inventors:
Lu Chen - Sunnyvale CA, US
Jason Kirkwood - Santa Clara CA, US
Mohan Mahadevan - Livermore CA, US
James A. Smith - Los Altos CA, US
Lisheng Gao - Morgan Hill CA, US
Junqing (Jenny) Huang - Fremont CA, US
Tao Luo - Fremont CA, US
Richard Wallingford - San Jose CA, US
Assignee:
KLA-Tencor Corp. - San Jose CA
International Classification:
G01N 21/00
US Classification:
3562372, 3562373
Abstract:
Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.

Data Perturbation For Wafer Inspection Or Metrology Setup

US Patent:
2012011, May 10, 2012
Filed:
Jun 9, 2011
Appl. No.:
13/258441
Inventors:
Mohan Mahadevan - Livermore CA, US
Ajay Gupta - San Jose CA, US
Ashok Kulkarni - San Jose CA, US
Jason Kirkwood - Santa Clara CA, US
Kenong Wu - Davis CA, US
Songnian Rong - San Jose CA, US
Assignee:
KLA-TENCOR CORPORATION - Milpitas CA
International Classification:
G06F 17/50
US Classification:
703 2
Abstract:
Various embodiments for determining parameters for wafer inspection and/or metrology are provided.

Systems And Methods For Detecting Defects On A Wafer

US Patent:
2013025, Sep 26, 2013
Filed:
May 22, 2013
Appl. No.:
13/900465
Inventors:
Jason Kirkwood - Santa Clara CA, US
Mohan Mahadevan - Livermore CA, US
James A. Smith - Los Altos CA, US
Lisheng Gao - Morgan Hill CA, US
Junqing (Jenny) Huang - Fremont CA, US
Tao Luo - Fremont CA, US
Richard Wallingford - San Jose CA, US
Assignee:
KLA-Tencor Corporation - San Jose CA
International Classification:
G01N 21/95
US Classification:
3562375
Abstract:
Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.

Automated Inspection Scenario Generation

US Patent:
2014005, Feb 20, 2014
Filed:
Aug 14, 2012
Appl. No.:
13/585115
Inventors:
Mohan Mahadevan - Santa Clara CA, US
Ajay Gupta - San Jose CA, US
Jason Kirkwood - Mountain View CA, US
Ashok Kulkarni - San Jose CA, US
Songnian Rong - San Jose CA, US
Ernesto Escorcia - Sunnyvale CA, US
Eugene Shifrin - Sunnyvale CA, US
Assignee:
KLA-Tencor Corporation - Milpitas CA
International Classification:
G06K 9/62
US Classification:
382149
Abstract:
Methods and systems for determining inspection scenarios without input from a user are presented. Inspection scenarios include at least one acquisition mode, defect detection parameter values, and classification parameter values. In one example, a number of defect events are determined by a hot inspection of a wafer surface. The defect events are classified and attributes associated with each defect event are identified. The defect events are labeled with this information. Based on the identified attributes and classification, inspection scenarios are determined. The inspection scenarios are solutions in a mathematical space formed by the identified attributes. In some examples, a plurality of inspection scenarios are determined and a desired inspection scenario is selected from the plurality based on the number of defects of interest and the number of nuisance events captured by the selected inspection scenario.

Defect Size Measurement Using Deep Learning Methods

US Patent:
2021036, Nov 25, 2021
Filed:
May 22, 2020
Appl. No.:
16/881083
Inventors:
- Milpitas CA, US
Jason Kirkwood - Mountain View CA, US
International Classification:
G01N 21/95
G06T 7/00
G06T 11/60
G06T 5/50
Abstract:
A system has detectors configured to receive a beam of light reflected from a wafer. For example, three detectors may be used. Each of the detectors is a different channel. Images from the detectors are combined into a pseudo-color RGB image. A convolutional neural network unit (CNN) can receive the pseudo-color RGB image and determine a size of a defect in the pseudo-color RGB image. The CNN also can classify the defect into a size category.

Systems And Methods For Detecting Defects On A Wafer

US Patent:
2018020, Jul 19, 2018
Filed:
Jan 8, 2018
Appl. No.:
15/865130
Inventors:
- San Jose CA, US
Jason Kirkwood - Santa Clara CA, US
Mohan Mahadevan - Livermore CA, US
James A. Smith - Los Altos CA, US
Lisheng Gao - Morgan Hill CA, US
Junqing (Jenny) Huang - Fremont CA, US
Tao Luo - Fremont CA, US
Richard Wallingford - San Jose CA, US
International Classification:
G01N 21/95
H01L 21/66
G01N 21/88
Abstract:
Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.

Possible Relatives

David G Kirkwood  Dawne E Kirkwood  Debora L Kirkwood  Dana G Kirkwood  Daniel R Kirkwood  Aaron P Kirkwood  Dennis M Kirkwood  Jason F Last  Jason S Johnson  Jason R Stamps 

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