Jason J New, 517511 Forest Bend Dr, Allen, TX 75002

7601639, Oct 13, 2009

Jun 7, 2007

11/759380

Salvator F. Pavone - Murphy TX, US
Jason J New - Allen TX, US

Texas Instruments Incorporated - Dallas TX

H01L 21/44

438679, 438197, 438903, 257E21054, 257E21174, 257E21293, 257E21632

The present invention provides, in one aspect, the present invention provides, in one embodiment, a method of conditioning a deposition chamber. This method comprises placing an undercoat on the walls of a deposition chamber and depositing a pre-deposition coat over the undercoat with a plasma gas mixture conducted at a high pressure and with high gas flow.

2006022, Oct 12, 2006

Apr 12, 2005

11/103860

Salvator Pavone - Murphy TX, US
Jason New - Allen TX, US

Texas Instruments, Incorporated - Dallas TX

H01L 21/31

438778000

The present invention provides, in one aspect, the present invention provides, in one embodiment, a method of conditioning a deposition chamber This method comprises placing an undercoat on the walls of a deposition chamber and depositing a pre-deposition coat over the undercoat with a plasma gas mixture conducted at a high pressure and with high gas flow.

2012010, May 3, 2012

Oct 28, 2011

13/284624

Jason James New - St. Paul TX, US
Salvatore Frank Pavone - Murphy TX, US

TEXAS INSTRUMENTS INCORPORATED - Dallas TX

H01L 21/306
B05B 1/00
H01L 21/304

438692, 239589, 257E2123

A dielectric deposition tool for forming a silicon dioxide layer on a wafer with a TEOS showerhead which delivers a flow rate per unit area from an edge band of the showerhead that is at least twice a flow rate per unit area from a central region of the showerhead. The edge band extends at least one half inch from an outer edge of the showerhead up to one fourth of the diameter of the wafer. A process of forming an integrated circuit by forming a silicon dioxide layer on a wafer containing the integrated circuit using the dielectric deposition tool. The silicon dioxide layer is thicker under the edge band than under the central region. A subsequent CMP operation reduces the thickness difference between the wafer outer annulus and the wafer core by at least half. The silicon dioxide layer has a compressive stress between 125 and 225 MPa.

2009018, Jul 30, 2009

Jan 30, 2008

12/022924

Jason J. New - St. Paul TX, US
Antonio Ibarra-Rivera - Plano TX, US

B08B 6/00

134 11, 134 56 R

An automatic method () of in-situ cleaning a processing system () including a process chamber () pumped by a roughing pump () and a turbomolecular pump () includes the steps of automatically performing a first RF plasma clean () (referred to herein as a chamber clean) to clean the process chamber, wherein the turbomolecular pump () is isolated and the roughing pump () pumps the processing chamber (). The turbomolecular pump () is automatically switched on to pump the processing chamber (). While the turbomolecular pump is pumping the processing chamber (), a second RF plasma clean () (referred to herein as an automatic turbo clean) is performed clean the turbomolecular pump (). In embodiments of the invention the turbo clean () automatically sets at least one gas flow, an RF power, and a pressure in the chamber ().

2009016, Jul 2, 2009

Dec 8, 2008

12/330042

Antonio Ibarra-Rivera - Plano TX, US
Jason James New - St. Paul TX, US

Texas Instruments Incorporated - Dallas TX

B23P 11/00

29428, 2940709, 29464, 29700, 292815

A method and apparatus for aligning a CVD showerhead, comprising engaging a showerhead stem clamp with a showerhead stem outside of a process chamber of the CVD system. An alignment fixture is provided, and a plurality of spacer discs are positioned between the showerhead suspended from a top plate of the CVD system and heated platen. Nuts supporting the showerhead to the top plate are loosened, therein permitting the showerhead to move vertically within the process chamber. The process chamber is closed and the top plate is lowered, wherein the showerhead contacts the plurality of spacer discs. The alignment fixture is engaged with the showerhead stem clamp, therein fixing a vertical position of the showerhead with respect to the top plate, and the top plate is raised. The position of the of the showerhead is then fixed with respect to the top plate via a plurality of standoffs, an adjustment bracket, a threaded rod, and a plurality of nuts.