Jay T Scheuer, 63188 Wethersfield St, Rowley, MA 01969

7126808, Oct 24, 2006

Apr 1, 2004

10/816289

Bjorn O. Pedersen - Chelmsford MA, US
Jay T. Scheuer - Rowley MA, US
Erik A. Mitchell - Quincy MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H02H 1/00

361234, 361230, 361233, 279128

An apparatus is provided for handling workpieces, such as semiconductor wafers, during semiconductor processing. The apparatus includes a wafer platen having a plurality of channels each extending from a top surface to a bottom surface of the wafer platen, a plurality of lift pins in alignment with the channels, and a mechanism for engaging the lift pins in a loading position of the workpiece, a clamping position of the workpiece so that desired semiconductor processes may be performed to the workpiece, and a lift off position for removing the workpiece from the wafer platen after the semiconductor processes are completed. The mechanism places the lift pins below the surface of the wafer platen in the load position and then raises the lift pins to a first predetermined distance above the surface of the wafer platen in the clamp position such that the first predetermined distance allows the workpiece to be clamped to the wafer platen. Then, the mechanism places the lift pins at a second predetermined distance above the surface of the wafer platen in the lift off position such that a workpiece removing device, such as a robotic arm, may be positioned between the workpiece and the wafer platen without contacting either surface.

7132672, Nov 7, 2006

Apr 2, 2004

10/817755

Steven R. Walther - Andover MA, US
Rajesh Dorai - Rockport MA, US
Harold Persing - Rockport MA, US
Jay Scheuer - Rowley MA, US
Bjorn O. Pedersen - Chelmsford MA, US
Chris Leavitt - Gloucester MA, US
Timothy Miller - South Hamilton MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H01J 37/244

2504923, 25049221, 250397, 327 713, 327 72, 118723 E, 118723, 438513, 438723

A Faraday dose and uniformity monitor can include a magnetically suppressed annular Faraday cup surrounding a target wafer. A narrow aperture can reduce discharges within Faraday cup opening. The annular Faraday cup can have a continuous cross section to eliminate discharges due to breaks. A plurality of annular Faraday cups at different radii can independently measure current density to monitor changes in plasma uniformity. The magnetic suppression field can be configured to have a very rapid decrease in field strength with distance to minimize plasma and implant perturbations and can include both radial and azimuthal components, or primarily azimuthal components. The azimuthal field component can be generated by multiple vertically oriented magnets of alternating polarity, or by the use of a magnetic field coil. In addition, dose electronics can provide integration of pulsed current at high voltage, and can convert the integrated charge to a series of light pulses coupled optically to a dose controller.

7521691, Apr 21, 2009

Dec 8, 2006

11/608595

Joseph P. Dzengeleski - Newton NH, US
Morgan D. Evans - Manchester MA, US
Jay Scheuer - Rowley MA, US
Ashwin Shetty - Burlington MA, US
Kenneth Swenson - Ipswich MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

G01K 1/08
H01J 3/14
H01J 3/26
A61N 5/00
G21G 5/00
G21K 5/10
H01J 37/08

250397, 2504921, 25049221, 2504923

This disclosure provides an approach for magnetic monitoring of a Faraday cup for an ion implanter. In this disclosure, there is a vacuum chamber and a Faraday cup located within the vacuum chamber. The Faraday cup is configured to move within the path of an ion beam entering the vacuum chamber. A magnetic monitor located about the vacuum chamber, is configured to distinguish a magnetic field associated with the Faraday cup from stray magnetic fields.

7622722, Nov 24, 2009

Oct 2, 2007

11/866099

Jonathan Gerald England - Horsham, GB
Christopher R. Hatem - Cambridge MA, US
Jay Thomas Scheuer - Rowley MA, US
Joseph C. Olson - Beverly MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H01J 49/10
H01J 49/24

250423R, 25049221, 250281, 250282, 250288, 25044111, 31511181

An ion implantation device with a dual pumping mode and method thereof for use in producing atomic or molecular ion beams are disclosed. In one particular exemplary embodiment, an ion implantation apparatus is provided for controlling a pressure within an ion beam source housing corresponding to an ion beam species being produced. The ion implantation apparatus may include the ion beam source housing comprising a plurality of species for use in ion beam production. A pumping section may also be included for evacuating gas from the ion beam source housing. A controller may further be included for controlling the pumping section according to pumping parameters corresponding to a species of the plurality of species being used for ion beam production.

7878145, Feb 1, 2011

Jun 2, 2004

10/858582

Ziwei Fang - Beverly MA, US
Edmund J. Winder - Waltham MA, US
Daniel Distaso - Merrimac MA, US
Ludovic Godet - Treize Vents, FR
Bon Woong Koo - Andover MA, US
Jay T. Scheuer - Rowley MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

C23C 16/00

118712, 118723 E

A plasma ion implantation system includes a process chamber, a source for producing a plasma in the process chamber, a platen for holding a substrate in the process chamber and a pulse source for generating implant pulses for accelerating ions from the plasma into the substrate. In one aspect, the system includes a plasma monitor configured to measure ion mass and energy in the process chamber and an analyzer configured to determine an operating condition of the system in response to the measured mass and energy. In another aspect, the system includes a data acquisition unit configured to acquire samples of the implant pulses and analyzer configured to determine an operating condition of the system based on the acquired samples.

7999479, Aug 16, 2011

Apr 16, 2009

12/424964

Costel Biloiu - Rockport MA, US
Jay Scheuer - Rowley MA, US
Alexander Perel - Danvers MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

H01J 7/24
H05H 1/24

31511151, 31511121, 31511181

An ion source, capable of generating high-density wide ribbon ion beam, utilizing one or more plasma sources is disclosed. In addition to the plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the plasma source. In one embodiment, dual plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.

8142607, Mar 27, 2012

Aug 28, 2008

12/200189

Costel Biloiu - Rockport MA, US
Alexander Perel - Danvers MA, US
Jay Scheuer - Rowley MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

C23C 16/00
H01L 21/306

15634539, 15634535, 15634538, 118723 FI, 118723 MP, 31511181

An ion source, capable of generating high density wide ribbon ion beam, utilizing one or more helicon plasma sources is disclosed. In addition to the helicon plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the helicon plasma source. In one embodiment, dual helicon plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.

8330127, Dec 11, 2012

Mar 31, 2008

12/080028

Russell J. Low - Rowley MA, US
Jay T. Scheuer - Rowley MA, US
Alexander S. Perel - Danvers MA, US
Craig R. Chaney - Rockport MA, US
Neil J. Bassom - Hamilton MA, US

Varian Semiconductor Equipment Associates, Inc. - Gloucester MA

G21K 5/00

25049221, 2504921, 2504923

Liner elements to protect the ion source housing and also increase the power efficiency of the ion source are disclosed. Two liner elements, preferably constructed from tungsten, are inserted into the ion source chamber, one placed against each of the two sidewalls. These inserts are electrically biased so as to induce an electrical field that is perpendicular to the applied magnetic field. Such an arrangement has been unexpectedly found to increase the life of not only the ion chamber housing, but also the indirectly heated cathode (IHC) and the repeller. In addition, the use of these biased liner elements also improved the power efficiency of the ion source; allowing more ions to be generated at a given power level, or an equal number of ions to be generated at a lower power level.