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Jean L Tokarz, 48125 Twin Lakes Rd, Cross Creek, FL 32640

Jean Tokarz Phones & Addresses

125 Twin Lakes Rd, Hawthorne, FL 32640    352-4814876   

2600 Williston Rd, Gainesville, FL 32608   

4711 Himes Ave, Tampa, FL 33611    941-8356724    813-8356724   

Kissimmee, FL   

Windermere, FL   

Largo, FL   

Marietta, GA   

Orlando, FL   

Mentions for Jean L Tokarz

Jean Tokarz resumes & CV records

Resumes

Jean Tokarz Photo 11

Manager And Owner

Location:
Gainesville, FL
Industry:
Research
Work:
Cancerpop Feb 2017 - Nov 2019
Patient Coordinator
Medosome Biotec Jul 2017 - Apr 2019
Project Manager
Make.work Jul 2017 - Apr 2019
Operations Consultant
The Tech Toybox Jul 2017 - Apr 2019
Project Manager
Reliox Corporation Jan 2017 - Jul 2017
Consultant
Jean Tokarz Consulting Jan 2017 - Jul 2017
Manager and Owner
Nanophotonica, Inc. Apr 2014 - Dec 2016
Director of Market Development
Advanced Plasmonics Dec 2010 - Apr 2014
Vice President of Engineering and Operations
Applied Plasmonics/Vi Microsystems Dec 2001 - Dec 2010
Engineering Manager- Senior Processing Engineer
Uniroyal Optoelectronics Apr 2000 - Dec 2001
Production Engineer
University of Florida Jan 1998 - Apr 2000
Research Assistant
Education:
University of Florida 1997 - 2000
Bachelors, Engineering
St. Petersburg College 1994 - 1997
Associates, Associate of Arts, Engineering
Skills:
Thin Films, Characterization, Nanotechnology, Engineering, Materials Science, Semiconductors, Sputtering, Optoelectronics, Manufacturing, Lithography, Spc, Photovoltaics, Experimentation, Testing, Vacuum, Sensors, Etching, Clean Rooms, Microelectronics, Plasma Physics, Mems, Photolithography
Languages:
Spanish
Jean Tokarz Photo 12

Jean Tokarz

Jean Tokarz Photo 13

Jean Tokarz

Publications & IP owners

Us Patents

Integration Of Electromagnetic Detector On Integrated Chip

US Patent:
7554083, Jun 30, 2009
Filed:
May 5, 2006
Appl. No.:
11/418244
Inventors:
Jonathan Gorrell - Gainesville FL, US
Mark Davidson - Florahome FL, US
Jean Tokarz - Hawthorne FL, US
Lev Gasparov - Gainesville FL, US
Assignee:
Virgin Islands Microsystems, Inc. - St. Thomas VI
International Classification:
H01J 3/26
H04B 10/06
US Classification:
2503361, 250397, 398202
Abstract:
A device includes an integrated circuit (IC) and at least one ultra-small resonant structure and a detection mechanism are formed on said IC. At least the ultra-small resonant structure portion of the device is vacuum packaged. The ultra-small resonant structure includes a plasmon detector having a transmission line. The detector mechanism includes a generator mechanism constructed and adapted to generate a beam of charged particles along a path adjacent to the transmission line; and a detector microcircuit disposed along said path, at a location after said beam has gone past said line, wherein the generator mechanism and the detector microcircuit are disposed adjacent transmission line and wherein a beam of charged particles from the generator mechanism to the detector microcircuit electrically couples a plasmon wave traveling along the metal transmission line to the microcircuit. The detector mechanism may be electrically connected to the underlying IC.

Resonant Detector For Optical Signals

US Patent:
7558490, Jul 7, 2009
Filed:
Apr 10, 2006
Appl. No.:
11/400280
Inventors:
Jonathan Gorrell - Gainesville FL, US
Mark Davidson - Florahome FL, US
Jean Tokarz - Hawthorne FL, US
Lev Gasparov - Gainesville FL, US
Assignee:
Virgin Islands Microsystems, Inc. - Saint Thomas VI
International Classification:
H04B 10/06
H04B 10/02
US Classification:
398212, 398202
Abstract:
An electronic receiver for decoding data encoded into light is described. The light is received at an ultra-small resonant structure. The resonant structure generates an electric field in response to the incident light. An electron beam passing near the resonant structure is altered on at least one characteristic as a result of the electric field. Data is encoded into the light by a characteristic that is seen in the electric field during resonance and therefore in the electron beam as it passes the electric field. Alterations in the electron beam are thus correlated to data values encoded into the light.

Plasmon Wave Propagation Devices And Methods

US Patent:
7573045, Aug 11, 2009
Filed:
May 15, 2007
Appl. No.:
11/798554
Inventors:
Jonathan Gorrell - Gainesville FL, US
Jean Tokarz - Hawthorne FL, US
Michael E. Maines - Gainesville FL, US
Mark Davidson - Florahome FL, US
Assignee:
Virgin Islands Microsystems, Inc. - St. Thomas VI
International Classification:
H01J 3/30
US Classification:
250399, 250396 R, 250397, 329302, 398202, 455313
Abstract:
Nanoantennas are formed on a substrate (e. g. , silicon) and generate light via interactions with a charged particle beam, where the frequency of the generated light is based in large part on the periodicity of the “fingers” that make up the nanoantennas. Each finger has typical dimensions of less than 100 nm on the shorter side and typically less than 500 nm on the longer, but the size of the optimal longer side is determined by the electron velocity. The charged particle may be an electron beam or any other source of charged particles. By utilizing fine-line lithography on the surface of the substrate, the nanoantennas can be formed without the need for complicated silicon devices.

Receiver Array Using Shared Electron Beam

US Patent:
7679067, Mar 16, 2010
Filed:
May 26, 2006
Appl. No.:
11/441219
Inventors:
Jonathan Gorrell - Gainesville FL, US
Mark Davidson - Florahome FL, US
Jean Tokarz - Hawthorne FL, US
Lev Gasparov - Gainesville FL, US
Assignee:
Virgin Island Microsystems, Inc. - Saint Thomas VI
International Classification:
H01J 3/26
US Classification:
250397, 250396 R, 398202
Abstract:
A multi-frequency receiver for receiving plural frequencies of electromagnetic radiation (e. g. , light) using a beam of charged particles shared between plural resonant structures. The direction of the beam of charged particles is selectively controlled by at least one deflector. The beam of charged particles passing near the resonant structure is altered on at least one characteristic as a result the presence of the electric field induced on the corresponding resonant structure. Alterations in the beam of charged particles are thus correlated to data values encoded by the electromagnetic radiation.

Single Layer Construction For Ultra Small Devices

US Patent:
7710040, May 4, 2010
Filed:
May 5, 2006
Appl. No.:
11/418080
Inventors:
Jonathan Gorrell - Gainesville FL, US
Mark Davidson - Florahome FL, US
Jean Tokarz - Hawthorne FL, US
Andres Trucco - Gainesville FL, US
Assignee:
Virgin Islands Microsystems, Inc. - St. Thomas VI
International Classification:
H01J 25/10
US Classification:
315 539, 315 3951, 315500, 315505
Abstract:
An array of ultra-small structures of between ones of nanometers to hundreds of micrometers in size that can be energized to produce at least two different frequencies of out put energy or data, with the ultra small structures being formed on a single conductive layer on a substrate. The array can include one row of different ultra small structures, multiple rows of ultra small structures, with each row containing identical structures, or multiple rows of a variety of structures that can produce all spectrums of energy or combinations thereof, including visible light.

Coupled Nano-Resonating Energy Emitting Structures

US Patent:
7728397, Jun 1, 2010
Filed:
May 5, 2006
Appl. No.:
11/418123
Inventors:
Jonathan Gorrell - Gainesville FL, US
Mark Davidson - Florahome FL, US
Jean Tokarz - Hawthorne FL, US
Assignee:
Virgin Islands Microsystems, Inc. - St. Thomas VI
International Classification:
G09G 3/06
US Classification:
257429, 372 2
Abstract:
A nano-resonating structure constructed and adapted to couple energy from a beam of charged particles into said nano-resonating structure and to transmit coupled energy outside the nano-resonating structure. A plurality of the nano-resonant substructures may be formed adjacent one another in a stacked array, and each may have various shapes, including segmented portions of shaped structures, circular, semi-circular, oval, square, rectangular, semi-rectangular, C-shaped, U-shaped and other shapes as well as designs having a segmented outer surface or area, and arranged in a vertically stacked array comprised of one or more ultra-small resonant structures. The vertically stacked arrays may be symmetric or asymmetric, tilted, and/or staggered.

Methods Of Producing Structures For Electron Beam Induced Resonance Using Plating And/Or Etching

US Patent:
7758739, Jul 20, 2010
Filed:
May 15, 2006
Appl. No.:
11/433486
Inventors:
Jonathan Gorrell - Gainesville FL, US
Mark Davidson - Florahome FL, US
Jean Tokarz - Hawthorne FL, US
Michael E. Maines - Gainesville FL, US
Andres Trucco - Gainesville FL, US
Paul Hart - Kansas City MO, US
Assignee:
Virgin Islands Microsystems, Inc. - Saint Thomas
International Classification:
H01L 21/461
H01L 21/302
US Classification:
205118, 2042294, 216 24, 438706, 257E21311
Abstract:
We describe an ultra-small structure and a method of producing the same. The structures produce visible light of varying frequency, from a single metallic layer. In one example, a row of metallic posts are etched or plated on a substrate according to a particular geometry. When a charged particle beam passed close by the row of posts, the posts and cavities between them cooperate to resonate and produce radiation in the visible spectrum (or even higher). A plurality of such rows of different geometries are formed by either etching or plating from a single metal layer such that the charged particle beam will yield different visible light frequencies (i. e. , different colors) using different ones of the rows.

Patterning Thin Metal Films By Dry Reactive Ion Etching

US Patent:
2006003, Feb 16, 2006
Filed:
Aug 13, 2004
Appl. No.:
10/917511
Inventors:
Mark Davidson - Florahome FL, US
Jean Tokarz - Hawthorne FL, US
Jonathan Gorrell - Saint Thomas VI, US
International Classification:
G03F 7/36
US Classification:
430318000
Abstract:
We describe a new method for etching patterns in silver, copper, or gold, or other plate metal thin films. A pattern of a hard mask is placed onto the surface of the thin film, followed by a step of reactive ion etching using a plasma formed using a gas feed of some combination of some amounts of methane (CH) and hydrogen (H), and some or no amount of Argon (Ar). The areas of silver, copper or gold not covered by the hard mask are etched while the hard mask protects those areas that will form the raised portions of thin film in the final structure.

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