Jeffrey Matthew Biser, 431139 Highland Ave, Bethlehem, PA 18018

2011014, Jun 23, 2011

Dec 17, 2010

12/972418

Nelson Tansu - Bethlehem PA, US
Helen M. Chan - Bethlehem PA, US
Richard P. Vinci - Easton PA, US
Jeffrey Biser - Coopersburg PA, US

LEHIGH UNIVERSITY - Bethlehem PA

H01L 33/04

257 13, 438 46, 257E33008

The use of an abbreviated GaN growth mode on nano-patterned AGOG sapphire substrates, which utilizes a process of using 15 nm low temperature GaN buffer and bypassing etch-back and recovery processes during epitaxy, enables the growth of high-quality GaN template on nano-patterned AGOG sapphire. The GaN template grown on nano-patterned AGOG sapphire by employing abbreviated growth mode has two orders of magnitude lower threading dislocation density than that of conventional GaN template grown on planar sapphire. The use of abbreviated growth mode also leads to significant reduction in cost of the epitaxy. The growths and characteristics of InGaN quantum wells (QWs) light emitting diodes (LEDs) on both templates were compared. The InGaN QWs LEDs grown on the nano-patterned AGOG sapphire demonstrated at least a 24% enhancement of output power enhancement over that of LEDs grown on conventional GaN templates.