Jeffrey Lynn Finder, 633160 E Main St UNIT 8, Mesa, AZ 85213

6432546, Aug 13, 2002

Jul 24, 2000

09/624527

Yu Wang - Greenbelt MD
Jeffrey M. Finder - Chandler AZ
Kurt Eisenbeiser - Tempe AZ
Zhiyi Yu - Gilbert AZ
Ravindranath Droopad - Chandler AZ

Motorola, Inc. - Schaumburg IL

B32B 900

428448, 428446, 428469, 428472, 428697, 428688, 428699, 428700, 428701, 428702

A high quality epitaxial layer of monocrystalline Pb(Zr,Ti)O can be grown overlying large silicon wafers by first growing an strontium titanate layer on a silicon wafer. The strontium titanate layer is a monocrystalline layer spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide.

6482538, Nov 19, 2002

Jul 25, 2001

09/912994

Ramamoorthy Ramesh - Silver Spring MD
Yu Wang - Shatin, HK
Jeffrey M. Finder - Chandler AZ
Zhiyi Yu - Gilbert AZ
Ravindranath Droopad - Chandler AZ
Kurt Eisenbeiser - Tempe AZ

Motorola, Inc. - Schaumburg IL

B32B 1900

428701, 428689, 428699, 428702

A high quality epitaxial layer of monocrystalline Pb(Mg,Nb)O âPbTiO or Pb(Mg Nb )O âPbTiO can be grown overlying large silicon wafers by first growing an strontium titanate layer on a silicon wafer. The strontium titanate layer is a monocrystalline layer spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide.

6555946, Apr 29, 2003

Jul 24, 2000

09/624803

Jeffrey M. Finder - Chandler AZ
Kurt Eisenbeiser - Tempe AZ
Jamal Ramdani - Gilbert AZ
Ravindranath Droopad - Chandler AZ
William Jay Ooms - Chandler AZ

Motorola, Inc. - Schaumburg IL

H01L 4108

310324, 311322, 311334

High quality epitaxial layers of piezoelectric material materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

6559471, May 6, 2003

Dec 8, 2000

09/733688

Jeffrey M. Finder - Chandler AZ
William J. Ooms - Prescott AZ

Motorola, Inc. - Schaumburg IL

H01L 2906

257 22, 257 9, 257 14, 257 15

High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer ( ) on a silicon wafer ( ). The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer ( ) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

6563118, May 13, 2003

Dec 8, 2000

09/733181

William J. Ooms - Prescott AZ
Jeffrey M. Finder - Chandler AZ
Kurt W. Eisenbeiser - Tempe AZ
Jerald A. Hallmark - Gilbert AZ

Motorola, Inc. - Schaumburg IL

G01J 500

2503383, 257 43, 257467, 257613

High quality epitaxial layers of monocrystalline materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer ( ) on a silicon wafer ( ). The accommodating buffer layer ( ) is a layer of monocrystalline material spaced apart from the silicon wafer ( ) by an amorphous interface layer ( ) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Utilizing this technique permits the fabrication of thin film pyroelectric devices ( ) on a monocrystalline silicon substrate.

6638838, Oct 28, 2003

Oct 2, 2000

09/678372

Kurt Eisenbeiser - Tempe AZ
Barbara M. Foley - Gilbert AZ
Jeffrey M. Finder - Chandler AZ
Danny L. Thompson - Mesa AZ

Motorola, Inc. - Schaumburg IL

H01L 2120

438481, 438606, 438607, 117101, 117105, 117108

High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. To further relieve strain in the accommodating buffer layer, at least a portion of the accommodating buffer layer is exposed to a laser anneal process to cause the accommodating buffer layer to become amorphous, providing a true compliant substrate for subsequent layer growth.

6750067, Jun 15, 2004

Apr 19, 2002

10/126772

Yu Wang - Greenbelt MD
Jeffrey M. Finder - Chandler AZ
Kurt Eisenbeiser - Tempe AZ
Zhiyi Yu - Gilbert AZ
Ravindranath Droopad - Chandler AZ

Freescale Semiconductor, Inc. - Austin TX

H01L 2100

438 3, 438 96, 438480

A high quality epitaxial layer of monocrystalline Pb(Zr,Ti)O can be grown overlying large silicon wafers by first growing an strontium titanate layer on a silicon wafer. The strontium titanate layer is a monocrystalline layer spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide.

6764864, Jul 20, 2004

Apr 17, 2003

10/418372

Hao Li - Chandler AZ
Jeffrey M. Finder - Chandler AZ
Yong Liang - Gilbert AZ
Corey Overgaard - Phoenix AZ

Freescale Semiconductor, Inc. - Austin TX

H01L 2100

438 3, 438689, 438695

An exemplary system and method for providing a microwave regime, frequency-agile device is disclosed as comprising inter alia: a low-loss, insulating substrate ( ); a layer of SiO ( ) over the surface of said substrate; and a layer of BST ( ) deposited over the SiO layer ( ). Disclosed features and specifications may be variously controlled, configured, adapted or otherwise optionally modified to further improve or otherwise optimize frequency response or other material characteristics. Exemplary embodiments of the present invention representatively provide for integrated high-efficiency, low-loss microwave components that may be readily incorporated with existing technologies for the improvement of frequency response, device package form factors, weights and/or other manufacturing, device or material performance metrics.