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Jeffrey B Fortin, 53Centre Hall, PA

Known as:
Jeff M Fortin
Related to:
Pamela J Fortin 75 Armand A Fortin 57 Peter Fortin 69

Jeffrey Fortin Phones & Addresses

Centre Hall, PA   

260 Sunday Dr, State College, PA 16801    518-6981644   

Philipsburg, PA   

Chelmsford, MA   

1169 Myron St, Schenectady, NY 12309   

2528 Hilltop Rd, Schenectady, NY 12309   

Niskayuna, NY   

North Berwick, ME   

Cohoes, NY   

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Jeffrey B Fortin

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Work

Company: Amphenol sensor technology group Aug 2020 Position: Global technology director

Education

Degree: Doctorates, Doctor of Philosophy School / High School: Rensselaer Polytechnic Institute 1996 to 2001 Specialities: Physics, Engineering

Skills

Sensors • Engineering • Product Development • Materials Science • Mems • Engineering Management • Nanotechnology • Six Sigma • Design of Experiments • Research • Materials • Physics • Semiconductors • Thin Films • Quality Management • Finite Element Analysis • Business Development • Microfluidics • Technology Development • Ndt • Science • Semiconductor Manufacturing • Entrepreneurship • Strategic Partnerships • University Relations • Corporate Relations • Industry Partnerships

Industries

Electrical/Electronic Manufacturing
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Mentions for Jeffrey B Fortin

Jeffrey Fortin resumes & CV records

Resumes

Jeffrey Fortin Photo 24

Global Technology Director

Location:
State College, PA
Industry:
Electrical/Electronic Manufacturing
Work:
Amphenol Sensor Technology Group
Global Technology Director Ge Oil & Gas 2008 - Oct 2014
Global Technology and Engineering Leader Penn State University 2008 - Oct 2014
Associate Vice President of Research, Director of Industrial Partnerships Ge Global Research 2006 - 2008
Lab Manager Ge Global Research 2000 - 2006
Physicist and Materials Science
Education:
Rensselaer Polytechnic Institute 1996 - 2001
Doctorates, Doctor of Philosophy, Physics, Engineering Rensselaer Polytechnic Institute 1996 - 1998
Bachelors, Physics University of Southern Maine 1990 - 1996
Bachelors, Bachelor of Arts, Physics
Skills:
Sensors, Engineering, Product Development, Materials Science, Mems, Engineering Management, Nanotechnology, Six Sigma, Design of Experiments, Research, Materials, Physics, Semiconductors, Thin Films, Quality Management, Finite Element Analysis, Business Development, Microfluidics, Technology Development, Ndt, Science, Semiconductor Manufacturing, Entrepreneurship, Strategic Partnerships, University Relations, Corporate Relations, Industry Partnerships

Publications & IP owners

Us Patents

Microelectromechanical High Pressure Gas Microvalve

US Patent:
6883774, Apr 26, 2005
Filed:
Oct 21, 2002
Appl. No.:
10/277028
Inventors:
Matthew C. Nielsen - Schenectady NY, US
Laura J. Meyer - Schenectady NY, US
Todd G. Wetzel - Niskayuna NY, US
Stanton E. Weaver - Northville NY, US
Jeffrey B. Fortin - Niskayuna NY, US
Renato Guida - Wynantskill NY, US
Assignee:
Lockheed Martin Corporation - Bethesda MD
International Classification:
F16K007/12
US Classification:
251 11, 251331
Abstract:
A microvalve and a method of forming a microvalve. The microvalve comprises first and second layers, a diaphragm member and a switching means. The first and second layers are secured together to form a valve body that forms an inlet opening for receiving fluid, an outlet opening for conducting fluid from the valve body, and a flow channel for conducting fluid from the inlet to the outlet. The diaphragm is disposed between the layers, and is movable between open and closed positions. In these position, the diaphragm, respectively, allows and blocks the flow of fluid from the inlet to the flow channel. The diaphragm is biased to the closed position, and moves from the closed position to the open position when the pressure of fluid in the inlet reaches a preset value. The switching means is connected to the valve body for moving the diaphragm to the closed position against the pressure of fluid in the inlet. Preferably, the microvalve is constructed out of SiC and stainless steel materials, allowing the microvalve to be used in a harsh environment.

Self Cooling Piezo Actuator For High Temperature Applications

US Patent:
6933661, Aug 23, 2005
Filed:
Oct 16, 2002
Appl. No.:
10/271454
Inventors:
Charles E. Seeley - Niskayuna NY, US
Todd G. Wetzel - Niskayuna NY, US
Andrew J. Calver - Clifton Park NY, US
Jeffrey B. Fortin - Niskayuna NY, US
Keith B. Fosen - Orlando FL, US
Assignee:
Lockheed Martin Corporation - Bethesda MD
International Classification:
H01L041/08
US Classification:
310341, 310346
Abstract:
A piezoelectric actuator and a method of assembling and employing a piezoelectric actuator. This method comprises the steps of positioning an expandable piezoelectric material inside a case, and enclosing a vaporizable liquid in the case. The case is positioned in a high temperature environment; and the liquid vaporizes, in that high temperature environment, over a given period of time, to maintain the temperature of the piezoelectric material below a given value for said period of time. Preferably, the vaporizing liquid maintains the temperature of the piezoelectric material substantially constant over that period of time. Also, preferably the case is provided with a pressure responsive valve that opens and closes, in the high temperature environment, to expose the liquid to that environment and control the vaporization of the liquid to maintain the temperature of the piezoelectric material substantially constant over the period of time.

Capacitive Micromachined Ultrasound Transducer Fabricated With Epitaxial Silicon Membrane

US Patent:
7037746, May 2, 2006
Filed:
Dec 27, 2004
Appl. No.:
11/023252
Inventors:
Lowell Scott Smith - Niskayuna NY, US
David Martin Mills - Niskayuna NY, US
Jeffrey Bernard Fortin - Niskayuna NY, US
Wei-Cheng Tian - Clifton Park NY, US
John Robert Logan - Danville CA, US
Assignee:
General Electric Company - Niskayuna NY
International Classification:
H01L 21/00
US Classification:
438 53
Abstract:
A capacitive micromachined ultrasound transducer (cMUT) cell is presented. The cMUT cell includes a lower electrode. Furthermore, the cMUT cell includes a diaphragm disposed adjacent to the lower electrode such that a gap having a first gap width is formed between the diaphragm and the lower electrode, wherein the diaphragm comprises one of a first epitaxial layer or a first polysilicon layer. In addition, a stress reducing material is disposed in the first epitaxial layer.

Microelectromechanical System Pressure Sensor And Method For Making And Using

US Patent:
7114397, Oct 3, 2006
Filed:
Mar 12, 2004
Appl. No.:
10/799053
Inventors:
Jeffrey Fortin - Niskayuna NY, US
Kuna Kishore - Bangalore, IN
Assignee:
General Electric Company - Niskayuna NY
International Classification:
H04R 17/00
US Classification:
73756
Abstract:
According to some embodiments, an apparatus includes a substrate that defines a plane. The apparatus also includes a first conducting plate that is substantially normal to the substrate and a second conducting plate that is (i) substantially normal to the substrate and (ii) deformable in response to a pressure.

Energy Harvesting System, Apparatus And Method

US Patent:
7116036, Oct 3, 2006
Filed:
Aug 2, 2004
Appl. No.:
10/909062
Inventors:
Mahadevan Balasubramaniam - Clifton Park NY, US
Jeffrey Bernard Fortin - Niskayuna NY, US
Walter John Smith - Ballston Spa NY, US
Huageng Luo - Clifton Park NY, US
Assignee:
General Electric Company - Niskayuna NY
International Classification:
H01L 41/08
US Classification:
310322, 310339, 310324, 310334
Abstract:
An energy harvesting device, system and method are described. The energy harvester collects acoustic energy and transforms it into electrical energy for use by a sensor. The energy harvester utilizes a piezoelectric device, which may be encased, either wholly or partially, within an acoustic chamber. Alternatively, the piezoelectric device may be entirely exterior to the acoustic chamber, which acts to amplify the collected acoustic energy.

Static And Dynamic Pressure Sensor

US Patent:
7181972, Feb 27, 2007
Filed:
Dec 27, 2004
Appl. No.:
11/023202
Inventors:
Samhita Dasgupta - Niskayuna NY, US
Jeffrey Bernard Fortin - Niskayuna NY, US
Steven Francis LeBoeuf - Schenectady NY, US
Vinayak Tilak - Schenectady NY, US
Chayan Mitra - Bangalore, IN
Steven Alfred Tysoe - Ballston Spa NY, US
Assignee:
General Electric Company - Schenectady NY
International Classification:
G01L 9/00
US Classification:
73705, 73754
Abstract:
A sensor, in accordance with aspects of the present technique, is provided. The sensor comprises a membrane formed of gallium nitride. The membrane is disposed on a substrate, which is wet-etched to form a closed cavity. The membrane exhibits both a capacitive response and a piezo-response to an external stimulus. The sensor further includes a circuit for measuring at least one of the capacitive response or the piezo-response. In certain aspects, the sensor may be operable to measure external stimuli, such as, pressure, force and mechanical vibration.

Microelectromechanical System Pressure Sensor And Method For Making And Using

US Patent:
7296476, Nov 20, 2007
Filed:
Jul 31, 2006
Appl. No.:
11/495317
Inventors:
Jeffrey Fortin - Niskayuna NY, US
Kuna Kishore - Bangalore, IN
Assignee:
General Electric Company - Niskayuna NY
International Classification:
H04R 17/00
US Classification:
73756
Abstract:
According to some embodiments, an apparatus includes a substrate that defines a plane. The apparatus also includes a first conducting plate that is substantially normal to the substrate and a second conducting plate that is (i) substantially normal to the substrate and (ii) deformable in response to a pressure.

Microelectromechanical System Pressure Sensor And Method For Making And Using

US Patent:
7305889, Dec 11, 2007
Filed:
Jul 31, 2006
Appl. No.:
11/495318
Inventors:
Jeffrey Fortin - Niskayuna NY, US
Kuna Kishore - Bangalore, IN
Assignee:
General Electric Company - Niskayuna NY
International Classification:
H04R 17/00
US Classification:
73756
Abstract:
According to some embodiments, an apparatus includes a substrate that defines a plane. The apparatus also includes a first conducting plate that is substantially normal to the substrate and a second conducting plate that is (i) substantially normal to the substrate and (ii) deformable in response to a pressure.

Public records

Vehicle Records

Jeffrey Fortin

Address:
260 Sunday Dr, State College, PA 16801
Phone:
518-6981644
VIN:
5FNRL38759B010197
Make:
HONDA
Model:
ODYSSEY
Year:
2009

Possible Relatives

Dawn M Fortin  Dana E Fortin  Debra Fortin  Daniel A Fortin  Aaron A Fortin  Denis E Fortin  Denise L Fortin  Jeffrey P Johnson  Jeffrey Stamps  Jeffrey Standard 

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