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Jeffrey Wong Lan, 463661 Caminito Carmel Lndg, San Diego, CA 92130

Known as:
Jeffrey W Lan Jeff Wong Lan

Jeffrey Lan Phones & Addresses

3661 Caminito Carmel Lndg, San Diego, CA 92130   

3661 Caminito Carmel Lndg #66, San Diego, CA 92130   

8148 Genesee Ave #138, San Diego, CA 92122   

7954 Avenida Navidad, San Diego, CA 92122   

Millbrae, CA   

Sacramento, CA   

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Resumes

Jeffrey Lan Photo 14

Principal Engineer And Technologist

Location:
San Diego, CA
Industry:
Telecommunications
Work:
Qualcomm
Principal Engineer and Technologist Dupont Displays 2004 - 2005
Senior Research Scientist Rf Integrated Corporation 2001 - 2004
Member of Technical Staff, Senior Ethentica Who Vision Systems A Phillips Nxp Funded Startup 1999 - 2001
Senior Scientist and Process Technologist University of Michigan 1994 - 1998
Graduate Research Assistant, Eecs Department National Taiwan University 1992 - 1993
Graduate Teaching Assistant, Eecs Department Taiwan Air Force 1990 - 1992
Second Lieutenant - Platoon Leader
Education:
University of Michigan 1994 - 1998
Doctorates, Doctor of Philosophy National Taiwan University 1988 - 1990
Master of Science, Masters
Skills:
Semiconductors, Mems, Rf, R&D, Ic, Design of Experiments, Thin Films, Cmos, Asic, Silicon, Mixed Signal, Jmp
Languages:
English
Mandarin
Jeffrey Lan Photo 15

Jeffrey Lan

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Jeffrey Lan Photo 16

Pc Club

On April 8, 2008, Jeff Lan was appointed advisor to a new PC Club chairman, James Cheng, while Sunny Lin was named the company's next president.

Us Patents

Method Of Creating Mems Device Cavities By A Non-Etching Process

US Patent:
8394656, Mar 12, 2013
Filed:
Jul 7, 2010
Appl. No.:
12/831898
Inventors:
Chun-Ming Wang - Fremont CA, US
Jeffrey Lan - Cupertino CA, US
Teruo Sasagawa - Los Gatos CA, US
Assignee:
Qualcomm MEMS Technologies, Inc. - San Diego CA
International Classification:
H01L 21/00
US Classification:
438 48, 438619, 438626, 438624, 438785, 438787, 257522, 257644, 257752, 257217, 257234
Abstract:
MEMS devices (such as interferometric modulators) may be fabricated using a sacrificial layer that contains a heat vaporizable polymer to form a gap between a moveable layer and a substrate. One embodiment provides a method of making a MEMS device that includes depositing a polymer layer over a substrate, forming an electrically conductive layer over the polymer layer, and vaporizing at least a portion of the polymer layer to form a cavity between the substrate and the electrically conductive layer. Another embodiment provides a method for making an interferometric modulator that includes providing a substrate, depositing a first electrically conductive material over at least a portion of the substrate, depositing a sacrificial material over at least a portion of the first electrically conductive material, depositing an insulator over the substrate and adjacent to the sacrificial material to form a support structure, and depositing a second electrically conductive material over at least a portion of the sacrificial material, the sacrificial material being removable by heat-vaporization to thereby form a cavity between the first electrically conductive layer and the second electrically conductive layer.

Method Of Creating Mems Device Cavities By A Non-Etching Process

US Patent:
2007015, Jul 5, 2007
Filed:
Dec 29, 2005
Appl. No.:
11/321134
Inventors:
Chun-Ming Wang - Fremont CA, US
Jeffrey Lan - Cupertino CA, US
Teruo Sasagawa - Los Gatos CA, US
International Classification:
H01L 21/00
US Classification:
438107000, 257E23128
Abstract:
MEMS devices (such as interferometric modulators) may be fabricated using a sacrificial layer that contains a heat vaporizable polymer to form a gap between a moveable layer and a substrate. One embodiment provides a method of making a MEMS device that includes depositing a polymer layer over a substrate, forming an electrically conductive layer over the polymer layer, and vaporizing at least a portion of the polymer layer to form a cavity between the substrate and the electrically conductive layer. Another embodiment provides a method for making an interferometric modulator that includes providing a substrate, depositing a first electrically conductive material over at least a portion of the substrate, depositing a sacrificial material over at least a portion of the first electrically conductive material, depositing an insulator over the substrate and adjacent to the sacrificial material to form a support structure, and depositing a second electrically conductive material over at least a portion of the sacrificial material, the sacrificial material being removable by heat-vaporization to thereby form a cavity between the first electrically conductive layer and the second electrically conductive layer.

Possible Relatives

Cynthia Lan  Dong Lan  Edward Lan  Grace C Lan  Helen Lan  Hong Lan  Jay S Lan  Jeffrey P Johnson  Jeffrey Stamps  Jeffrey Standard 

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