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Jeremiah F Mccarthy, 36Gloucester, MA

Known as:
Jeremiah J Mccarthy Jeremiah P Mccarthy
Related to:
Joseph F Mccarthy 80 Amy D Mccarthy 40 Frederick Mccarthy 41 Michelle Lavey 59 Michelle M Carthy 59 Michelle Mccarthy 52

Jeremiah Mccarthy Phones & Addresses

Gloucester, MA   

San Francisco, CA   

Jamaica Plain, MA   

North Easton, MA   

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Mentions for Jeremiah F Mccarthy

Career records & work history

License Records

Jeremiah A Mccarthy

Address:
Jamaica Plain, MA 02130
Licenses:
License #: 199 - Expired
Expiration Date: Dec 31, 1989
Type: Health Officer

Jeremiah A Mccarthy

Address:
Jamaica Plain, MA 02130
Licenses:
License #: 209 - Expired
Expiration Date: Dec 31, 1992
Type: Sanitarian

Jeremiah A Mccarthy

Address:
Jamaica Plain, MA 02130
Licenses:
License #: 6007 - Expired
Issued Date: Jan 1, 1960
Expiration Date: Aug 2, 1988
Type: Broker

Jeremiah Mccarthy resumes & CV records

Resumes

Jeremiah Mccarthy Photo 34

Events Team Member

Location:
San Francisco, CA
Industry:
Fund-Raising
Work:
The Chapel 2013 - 2014
Events Team Member Frameline 2013 - 2014
Corporate Sponsorship Manager Family Equality Council 2011 - 2013
Events Associate Kosrae High School 2010 - 2011
World History and Film Instructor
Education:
Stonehill College 2007 - 2010
Bachelors, Bachelor of Arts New York University 2006 - 2007
Interests:
Civil Rights and Social Action
Poverty Alleviation
Disaster and Humanitarian Relief
Human Rights
Animal Welfare
Arts and Culture
Health
Certifications:
Tefl
Jeremiah Mccarthy Photo 35

Jeremiah Mccarthy

Jeremiah Mccarthy Photo 36

Jeremiah Mccarthy

Publications & IP owners

Us Patents

Method Of Fabricating A Monolithic Integrated Circuit Structure

US Patent:
4416055, Nov 22, 1983
Filed:
Dec 4, 1981
Appl. No.:
6/327383
Inventors:
Jeremiah P. McCarthy - Framingham MA
Marvin Tabasky - Peabody MA
Assignee:
GTE Laboratories Incorporated - Waltham MA
International Classification:
H01L 2131
H01L 21318
US Classification:
29577C
Abstract:
Method of fabricating monolithic integrated circuit structure incorporating a bipolar transistor and a high value resistor. First and second N-type sectors are formed in an N-type epitaxial layer by junction isolation. A silicon oxide layer is formed on the surface of the body. The layer is thinner over a part of the first sector and over a part of the second sector. A layer of silicon nitride is formed on portions of the thinner silicon oxide to overlie predetermined zones within each sector. P-type conductivity imparting material is ion implanted through the unprotected thinner silicon oxide to form a low resistivity region in the first sector and two low resistivity regions in the second sector. The layer of silicon nitride overlying the predetermined zone in the second sector is removed, and an opening is formed over the predetermined zone in the second sector. P-type conductivity imparting material is ion implanted through the opening to form a resistor in the predetermined zone of the second sector with the two low resistivity regions providing contact regions at opposite ends thereof.

Isbn (Books And Publications)

Medical Ethics: A Catholic Guide To Healthcare Decisions

Author:
Jeremiah J. McCarthy
ISBN #:
0892433221

Possible Relatives

Cynthia L Mccarthy  David D Mccarthy  Dawn M Mccarthy  Dayna L Mccarthy  Dean C Mccarthy  Dale R Mccarthy  Damian J Mccarthy  Jeremiah L Johnson  Jeremiah N Johnston  Jeremiah J White 

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