Jerry J Wong, 40San Leandro, CA

6352937, Mar 5, 2002

Apr 27, 1998

09/067377

Shingo Kadomura - Kanagawa, JP
Jerry Wong - Fremont CA
Masato Toshima - Sunnyvale CA

Sony Corporation - Tokyo
Gamma Precision Technology Inc. - Santa Clara CA

H01L 2100

438725, 216 67, 438737

There is provided a method used for processing an organic low dielectric constant insulating film to a desired shape for enabling facilitated stripping of an organic film formed on top of the organic low dielectric constant insulating film. Specifically, there is provided a method for stripping an organic film formed on a layered unit having at least an organic low dielectric constant insulating film. This method includes generating radicals in a gas mainly composed of fluorine-based gas, and stripping the organic film by the generated radicals.

6399514, Jun 4, 2002

Aug 24, 2000

09/645924

Jeffrey Marks - San Jose CA
Jerry Yuen-Kui Wong - Fremont CA
David W. Groechel - Sunnyvale CA
Peter R. Keswick - Newark CA

Applied Materials, Inc. - Santa Clara CA

H01L 21302

438729, 438711, 438714, 438719, 438723, 216 71, 216 79, 216 80

A plasma process for etching oxide and having a high selectivity to silicon including flowing into a plasma reaction chamber a fluorine-containing etching gas and maintaining a temperature of an exposed silicon surface within said chamber at a temperature of between 200Â C. and 300Â C. An example of the etching gas includes SiF and a fluorocarbon gas. The plasma may be generated by a capacitive discharge type plasma generator or by an electromagnetically coupled plasma generator, such as an inductively coupled plasma generator. The high selectivity exhibited by the etch process permits use of an electromagnetically coupled plasma generator, which in turn permits the etch process to be performed at low pressures of between 1 and 30 milliTorr, resulting the etching of vertical sidewalls in the oxide layer.

6444137, Sep 3, 2002

Jul 1, 1996

08/673972

Kenneth S. Collins - San Jose CA
Jerry Yuen-Kui Wong - Fremont CA
Jeffrey Marks - San Jose CA
Peter R. Keswick - Newark CA
David W. Groechel - Sunnyvale CA

Applied Materials, Inc. - Santa Clara CA

C23F 100

216 79, 216 67, 216 68

A plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching oxygen-containing layers overlying non-oxygen-containing layers with high selectivity. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with other etch processes, deposition processes and combined etch/deposition processes. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields. Etching of an oxygen-containing layer overlying a non-oxygen-containing layer can be achieved with high selectivity.

6488807, Dec 3, 2002

May 3, 2000

09/563825

Kenneth S. Collins - San Jose CA
Jerry Yuen-Kui Wong - Fremont CA
Jeffrey Marks - San Jose CA
Peter R. Keswick - Bloomington MN
David W. Groechel - Los Altos Hills CA
Craig A. Roderick - San Jose CA
John R. Trow - San Jose CA
Tetsuya Ishikawa - Chiba, JP
Lawrence Chang-Lai Lei - Cupertino CA
Masato M. Toshima - Sunnyvale CA
Gerald Zheyao Yin - Cupertino CA

Applied Materials, Inc. - Santa Clara CA

H05H 100

15634549, 15634548, 118723 I

The invention is embodied in an RF plasma reactor for processing a semiconductor workpiece, including wall structures for containing a plasma therein, a workpiece support, a coil antenna capable of receiving a source RF power signal and being juxtaposed near the chamber, the workpiece support including a bias electrode capable of receiving a bias RF power signal, and first and second magnet structures adjacent the wall structure and in spaced relationship, with one pole of the first magnet structure facing an opposite pole of the second magnet structure, the magnet structures providing a plasma-confining static magnetic field adjacent said wall structure. The invention is also embodied in an RF plasma reactor for processing a semiconductor workpiece, including one or more wall structures for containing a plasma therein, a workpiece support, the workpiece support comprising a lower electrode, an upper electrode facing the lower electrode and spaced across a plasma generation region of said chamber from said lower electrode, and first and second magnet structures adjacent the wall structure and in spaced relationship with one pole of the first magnet structure facing an opposite pole of the second magnet structure, the magnet structures providing a plasma-confining static magnetic field adjacent said wall structure.

6518195, Feb 11, 2003

Feb 15, 2000

09/504312

Kenneth S. Collins - San Jose CA
Jerry Yuen-Kui Wong - Fremont CA
Jeffrey Marks - San Jose CA
Peter R. Keswick - Bloomington MN
David W. Groechel - Los Altos Hills CA
Craig A. Roderick - San Jose CA
John R. Trow - San Jose CA
Tetsuya Ishikawa - Chiba, JP
Lawrence Chang-Lai Lei - Cupertino CA
Masato M. Toshima - Sunnyvale CA
Gerald Zheyao Yin - Cupertino CA

Applied Materials, Inc. - Santa Clara CA

H01L 213065

438723, 438729, 438743

A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the 10 wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

6545420, Apr 8, 2003

Jun 6, 1995

08/468573

Kenneth S. Collins - San Jose CA
Craig A. Roderick - San Jose CA
John R. Trow - Santa Clara CA
Jerry Yuen-Kui Wong - Fremont CA
Jeffrey Marks - San Jose CA
Peter R. Keswick - Newark CA
David W. Groechel - Sunnyvale CA
Tetsuya Ishikawa - Chiba, JP
Lawrence Chang-Lai Lei - Cupertino CA
Masato M. Toshima - Sunnyvale CA

Applied Materials, Inc. - Santa Clara CA

H01J 724

31511151, 118723 ER, 118723 IR, 118723 I

A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

2002000, Jan 10, 2002

Jun 9, 1999

09/328914

KENNETH S. COLLINS - SAN JOSE CA, US
CRAIG A. RODERICK - SAN JOSE CA, US
JOHN R. TROW - SANTA CLARA CA, US
JERRY YUEN-KUI WONG - FREMONT CA, US
JEFFREY MARKS - SAN JOSE CA, US
PETER R. KESWICK - NEWARK CA, US
DAVID W. GROECHEL - SUNNYVALE CA, US
JAY D. PINSON - SAN JOSE CA, US
TETSUYA ISHIKAWA - CHIBA, JP
LAWRENCE CHANG-LAI LEI - CUPERTINO CA, US
MASATO M. TOSHIMA - SUNNYVALE CA, US

H01L021/302
H01L021/461

438/719000, 438/724000, 438/738000

A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.

2013020, Aug 15, 2013

Feb 14, 2012

13/372985

Jerry Wong - San Jose CA, US

Ji Fu Machinery & Equipment Inc. - San Jose CA

H01L 29/04
H01L 31/18

257 49, 438 97, 257E29003, 257E31043

A method for manufacturing a semiconductor device includes providing a substrate upon which the semiconductor device is to be disposed, heating the substrate to a first temperature that exceeds at least one of a softening point or glass transition temperature of the substrate, and depositing a polysilicon layer onto the substrate. A semiconductor device includes a substrate having at least one of a softening point, T, that is less than 600 degrees Celsius and a polysilicon layer disposed on an upper surface of the substrate such that the polysilicon layer abuts the substrate.