Ji Zhu resumes & CV records
Resumes
Ji Zhu, 46Hayward, CA
Ji Zhu Phones & Addresses
Castro Valley, CA
El Cerrito, CA
2721 Parker St, Berkeley, CA 94704
Redmond, WA
Herndon, VA
Mentions for Ji Zhu
Publications & IP owners
Us Patents
Method For Plasma Stripping Using Periodic Modulation Of Gas Chemistry And Hydrocarbon Addition
US Patent:
7294580, Nov 13, 2007
Filed:
Jun 3, 2004
Appl. No.:
10/860833
Inventors:
Seokmin Yun - Pleasanton CA, US
Ji Zhu - El Cerrito CA, US
Peter Cirigliano - Sunnyvale CA, US
Sangheon Lee - San Jose CA, US
Thomas S. Choi - San Jose CA, US
Peter Loewenhardt - Pleasanton CA, US
Mark H. Wilcoxson - Piedmont CA, US
Reza Sadjadi - Saratoga CA, US
Eric A. Hudson - Berkeley CA, US
James V. Tietz - Fremont CA, US
Ji Zhu - El Cerrito CA, US
Peter Cirigliano - Sunnyvale CA, US
Sangheon Lee - San Jose CA, US
Thomas S. Choi - San Jose CA, US
Peter Loewenhardt - Pleasanton CA, US
Mark H. Wilcoxson - Piedmont CA, US
Reza Sadjadi - Saratoga CA, US
Eric A. Hudson - Berkeley CA, US
James V. Tietz - Fremont CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
H01L 21/00
US Classification:
438710, 438696, 438706, 438712, 438714, 438720, 216 67
Abstract:
A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase using first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0. 005 to 10 seconds for each cycle. The performing the stripping phase for stripping the photoresist mask using a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0. 005 to 10 seconds for each cycle.
Post Etch Wafer Surface Cleaning With Liquid Meniscus
US Patent:
7597765, Oct 6, 2009
Filed:
Jun 28, 2006
Appl. No.:
11/477299
Inventors:
Ji Zhu - El Cerrito CA, US
Seokmin Yun - Pleasanton CA, US
Mark Wilcoxson - Oakland CA, US
John de Larios - Palo Alto CA, US
Seokmin Yun - Pleasanton CA, US
Mark Wilcoxson - Oakland CA, US
John de Larios - Palo Alto CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
B08B 3/08
C23G 1/02
C23G 1/02
US Classification:
134 3, 134 28, 134 34, 134902
Abstract:
A method for cleaning the surface of a semiconductor wafer is disclosed. A first cleaning solution is applied to the wafer surface to remove contaminants on the wafer surface. The first cleaning solution is removed with some of the contaminants on the wafer surface. Next, an oxidizer solution is applied to the wafer surface. The oxidizer solution forms an oxidized layer on remaining contaminants. The oxidizer solution is removed and then a second cleaning solution is applied to the wafer surface. The second cleaning solution is removed from the wafer surface. The cleaning solution is configured to substantially remove the oxidized layer along with the remaining contaminants.
Apparatus For Cleaning Edge Of Substrate And Method For Using The Same
US Patent:
7758404, Jul 20, 2010
Filed:
Oct 17, 2005
Appl. No.:
11/253118
Inventors:
Jason A. Ryder - Oakland CA, US
Ji Zhu - El Cerrito CA, US
Mark Wilcoxson - Oakland CA, US
Fritz Redeker - Fremont CA, US
John P. Parks - Hercules CA, US
Charles Ditmore - Oakland CA, US
Jeffrey G. Gasparitsch - Fremont CA, US
Ji Zhu - El Cerrito CA, US
Mark Wilcoxson - Oakland CA, US
Fritz Redeker - Fremont CA, US
John P. Parks - Hercules CA, US
Charles Ditmore - Oakland CA, US
Jeffrey G. Gasparitsch - Fremont CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
B24B 1/00
US Classification:
451246, 451 44, 451446, 451254, 451526, 15 77, 15 881, 15102
Abstract:
An apparatus, system and method for cleaning a substrate edge include a composite applicator that cleans bevel polymers deposited on wafer edges using frictional contact in the presence of fluids. The composite applicator includes a support material and a plurality of abrasive particles distributed within and throughout the support material. The composite applicator cleans the edge of the wafer by allowing frictional contact of the plurality of abrasive particles with the edge of the wafer in the presence of fluids, such as liquid chemicals, to cut, rip and tear the bevel polymer from the edge of the wafer.
Method And Apparatus For Uniformly Applying A Multi-Phase Cleaning Solution To A Substrate
US Patent:
7913703, Mar 29, 2011
Filed:
Mar 30, 2006
Appl. No.:
11/395851
Inventors:
Jeffrey J. Farber - Delmar NY, US
Ji Zhu - El Cerrito CA, US
Carl Woods - Aptos CA, US
John M. de Larios - Palo Alto CA, US
Ji Zhu - El Cerrito CA, US
Carl Woods - Aptos CA, US
John M. de Larios - Palo Alto CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
B08B 3/00
US Classification:
134184, 134157, 134902, 15634551, 15634555
Abstract:
An apparatus used to supply a force onto a cleaning solution for processing a substrate for cleaning surface contaminants is disclosed. The apparatus includes a force applicator and a gate. The force applicator is configured to be adjusted to a first height off the surface of the substrate. The gate is positioned adjacent to a trailing point of the force applicator and is configured to be adjusted to a second height off of the surface of the substrate to enable planarization of the cleaning solution as the solution moves to the trailing point.
Method And Apparatus For Removing Contaminants From Substrate
US Patent:
7967019, Jun 28, 2011
Filed:
Sep 17, 2008
Appl. No.:
12/212579
Inventors:
Ji Zhu - El Cerrito CA, US
Arjun Mendiratta - Berkely CA, US
David Mui - Fremont CA, US
Arjun Mendiratta - Berkely CA, US
David Mui - Fremont CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
B08B 3/00
US Classification:
134 951, 134 26
Abstract:
A cleaning material is applied to a surface of a substrate. The cleaning material includes one or more polymeric materials for entrapping contaminants present on the surface of the substrate. A rinsing fluid is applied to the surface of the substrate at a controlled velocity to effect removal of the cleaning material and contaminants entrapped within the cleaning material from the surface of the substrate. The controlled velocity of the rinsing fluid is set to cause the cleaning material to behave in an elastic manner when impacted by the rinsing fluid, thereby improving contaminant removal from the surface of the substrate.
Apparatus For Particle Removal By Single-Phase And Two-Phase Media
US Patent:
8084406, Dec 27, 2011
Filed:
Jun 2, 2008
Appl. No.:
12/131667
Inventors:
David S. L. Mui - Fremont CA, US
Satish Srinivasan - Fremont CA, US
Grant Peng - Fremont CA, US
Ji Zhu - El Cerrito CA, US
Shih-Chung Kon - San Jose CA, US
Dragan Podlesnik - Palo Alto CA, US
Arjun Mendiratta - Berkeley CA, US
Satish Srinivasan - Fremont CA, US
Grant Peng - Fremont CA, US
Ji Zhu - El Cerrito CA, US
Shih-Chung Kon - San Jose CA, US
Dragan Podlesnik - Palo Alto CA, US
Arjun Mendiratta - Berkeley CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
C11D 17/00
US Classification:
510109, 134902
Abstract:
The embodiments of the present invention provide apparatus for cleaning patterned substrates with fine features with cleaning materials. The apparatus using the cleaning materials has advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network). The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials.
Composition And Application Of A Two-Phase Contaminant Removal Medium
US Patent:
8105997, Jan 31, 2012
Filed:
Nov 7, 2008
Appl. No.:
12/267362
Inventors:
Ji Zhu - El Cerrito CA, US
Arjun Mendiratta - Berkely CA, US
David Mui - Fremont CA, US
Arjun Mendiratta - Berkely CA, US
David Mui - Fremont CA, US
Assignee:
Lam Research Corporation - Fremont CA
International Classification:
C11D 3/37
US Classification:
510175, 510176, 134 13
Abstract:
The embodiments provide substrate cleaning techniques to remove contaminants from the substrate surface to improve device yield. The substrate cleaning techniques utilize a cleaning material with solid components and polymers with a large molecular weight dispersed in a cleaning liquid to form the cleaning material, which is fluidic. The solid components remove contaminants on the substrate surface by making contact with the contaminants. The polymers with large molecular weight form polymer chains and a polymeric network that capture and entrap solids in the cleaning materials, which prevent solids from falling on the substrate surface. In addition, the polymers can also assist in removing contaminants form the substrate surface by making contacts with contaminants on the substrate surface. In one embodiment, the cleaning material glides around protruding features on the substrate surface without making a forceful impact on the protruding features to damage them. The present invention can be implemented in numerous ways, including a material (or solution), a method, a process, an apparatus, or a system.
Materials For Particle Removal By Single-Phase And Two-Phase Media
US Patent:
8211846, Jul 3, 2012
Filed:
Jun 2, 2008
Appl. No.:
12/131654
Inventors:
David S. L. Mui - Fremont CA, US
Satish Srinivasan - Fremont CA, US
Grant Peng - Fremont CA, US
Ji Zhu - El Cerrito CA, US
Shih-Chung Kon - San Jose CA, US
Dragan Podlesnik - Palo Alto CA, US
Arjun Mendiratta - Berkeley CA, US
Satish Srinivasan - Fremont CA, US
Grant Peng - Fremont CA, US
Ji Zhu - El Cerrito CA, US
Shih-Chung Kon - San Jose CA, US
Dragan Podlesnik - Palo Alto CA, US
Arjun Mendiratta - Berkeley CA, US
Assignee:
Lam Research Group - Fremont CA
International Classification:
C11D 1/00
C11D 3/26
C11D 3/37
C11D 3/26
C11D 3/37
US Classification:
510176, 510175, 510475, 510477, 510488, 510499, 510501, 438692
Abstract:
The embodiments of the present invention provide improved materials for cleaning patterned substrates with fine features. The cleaning materials have advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network). The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials.
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