Jingjing Liu111 Orr Rd, Alameda, CA 94502

2013010, May 2, 2013

Oct 25, 2012

13/660463

JOSHUA COLLINS - Sunnyvale CA, US
Murali K. Narasimhan - San Jose CA, US
Jingjing Liu - Santa Clara CA, US
Kai Wu - Palo Alto CA, US
Avgerinos V. Gelatos - Redwood City CA, US

H01L 21/768

438653

Embodiments of the invention provide an improved process for depositing tungsten-containing materials. In one embodiment, the method for forming a tungsten-containing material on a substrate includes forming an adhesion layer containing titanium nitride on a dielectric layer disposed on a substrate, forming a tungsten nitride intermediate layer on the adhesion layer, wherein the tungsten nitride intermediate layer contains tungsten nitride and carbon. The method further includes forming a tungsten barrier layer (e.g., tungsten or tungsten-carbon material) from the tungsten nitride intermediate layer by thermal decomposition during a thermal annealing process (e.g., temperature from about 700 C. to less than 1,000 C.). Subsequently, the method includes optionally forming a nucleation layer on the tungsten barrier layer, optionally exposing the tungsten barrier layer and/or the nucleation layer to a reducing agent during soak processes, and forming a tungsten bulk layer on or over the tungsten barrier layer and/or the nucleation layer.

2018010, Apr 19, 2018

Aug 30, 2017

15/691157

- Santa Clara CA, US
ADOLPH MILLER ALLEN - Oakland CA, US
MICHAEL STOWELL - Loveland CO, US
ZHONG QIANG HUA - Saratoga CA, US
CARL R. JOHNSON - Tracy CA, US
VANESSA FAUNE - San Jose CA, US
JINGJING LIU - Milpitas CA, US

H01J 37/34
C23C 14/34
C23C 14/35
H01B 9/02

A system for the generation and delivery of a pulsed, high voltage signal for a process chamber includes a remotely disposed high voltage supply to generate a high voltage signal, a pulser disposed relatively closer to the process chamber than the high voltage supply, a first shielded cable to deliver the high voltage signal from the remotely disposed high voltage supply to the pulser to be pulsed, and a second shielded cable to deliver a pulsed, high voltage signal from the pulser to the process chamber. A method for generating and delivering a pulsed, high voltage signal to a process chamber includes generating a high voltage signal at a location remote from the process chamber, delivering the high voltage signal to a location relatively closer to the process chamber be pulsed, pulsing the delivered, high voltage signal, and delivering the pulsed, high voltage signal to the process chamber.

2018004, Feb 15, 2018

Nov 11, 2016

15/349433

- Santa Clara CA, US
Viachslav BABAYAN - Sunnyvale CA, US
Jingjing LIU - Milpitas CA, US
Zhong Qiang HUA - Saratoga CA, US

C23C 14/34
H01J 37/34
C23C 14/35
H01L 21/683

Embodiments presented herein relate to a pulse control system for a substrate processing system. The pulse control system includes a power source, a system controller, and a pulse shape controller. The pulse shape controller is coupled to the power source and in communication with the system controller. The pulse shape controller includes a first switch assembly and a second switch assembly. The first switch assembly includes a first switch having a first end and a second end. The first switch is configurable between an open state and a closed state. The second switch assembly includes a second switch having a first end and a second end. The first switch is in the closed state and the second switch is in the open state. The first switch in the closed state is configured to allow a pulse supplied by the power source to transfer through the pulse shape controller.

2017006, Mar 2, 2017

Nov 10, 2016

15/348170

- Santa Clara CA, US
Christopher S. NGAI - Burlingame CA, US
Jingjing LIU - Milpitas CA, US
Jun XUE - San Jose CA, US
Chentsau YING - Cupertino CA, US
Ludovic GODET - Sunnyvale CA, US

H01L 21/033
H01L 27/115

A nanocrystalline diamond layer for use in forming a semiconductor device and methods for using the same are disclosed herein. The device can include a substrate with a processing surface and a supporting surface, a device layer formed on the processing surface and a nanocrystalline diamond layer formed on the processing layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm. The method can include positioning a substrate in a process chamber, depositing a device layer on a processing surface, depositing a nanocrystalline diamond layer on the device layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm, patterning and etching the nanocrystalline diamond layer, etching the device layer to form a feature and ashing the nanocrystalline diamond layer from the surface of the device layer.

2016006, Mar 3, 2016

Aug 24, 2015

14/833858

- Santa Clara CA, US
Christopher S. NGAI - Burlingame CA, US
Jingjing LIU - Milpitas CA, US
Chentsau YING - Cupertino CA, US
Ludovic GODET - Sunnyvale CA, US

H01L 29/423
H01L 21/311
H01L 29/51
H01L 21/02
H01L 29/49
H01L 27/115

A nanocrystalline diamond layer for use in forming a semiconductor device and methods for using the same are disclosed herein. The device can include a substrate with a processing surface and a supporting surface, a device layer formed on the processing surface and a nanocrystalline diamond layer formed on the processing layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm. The method can include positioning a substrate in a process chamber, depositing a device layer on a processing surface, depositing a nanocrystalline diamond layer on the device layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm, patterning and etching the nanocrystalline diamond layer, etching the device layer to form a feature and ashing the nanocrystalline diamond layer from the surface of the device layer.

2015009, Apr 9, 2015

May 29, 2014

14/290861

- Santa Clara CA, US
Joseph Johnson - Redwood City CA, US
Jingjing Liu - Sunnyvale CA, US
He Ren - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/3213
H01L 21/268

438720

An apparatus configured to remove metal etch byproducts from the surface of substrates and from the interior of a substrate processing chamber. A plasma is used in combination with a solid state light source, such as an LED, to desorb metal etch byproducts. The desorbed byproducts may then be removed from the chamber.