Jingjing Liu, 431812 Lee Way, Milpitas, CA 95035

2013010, May 2, 2013

Oct 25, 2012

13/660463

JOSHUA COLLINS - Sunnyvale CA, US
Murali K. Narasimhan - San Jose CA, US
Jingjing Liu - Santa Clara CA, US
Kai Wu - Palo Alto CA, US
Avgerinos V. Gelatos - Redwood City CA, US

H01L 21/768

438653

Embodiments of the invention provide an improved process for depositing tungsten-containing materials. In one embodiment, the method for forming a tungsten-containing material on a substrate includes forming an adhesion layer containing titanium nitride on a dielectric layer disposed on a substrate, forming a tungsten nitride intermediate layer on the adhesion layer, wherein the tungsten nitride intermediate layer contains tungsten nitride and carbon. The method further includes forming a tungsten barrier layer (e.g., tungsten or tungsten-carbon material) from the tungsten nitride intermediate layer by thermal decomposition during a thermal annealing process (e.g., temperature from about 700 C. to less than 1,000 C.). Subsequently, the method includes optionally forming a nucleation layer on the tungsten barrier layer, optionally exposing the tungsten barrier layer and/or the nucleation layer to a reducing agent during soak processes, and forming a tungsten bulk layer on or over the tungsten barrier layer and/or the nucleation layer.

2014002, Jan 23, 2014

Jul 23, 2013

13/948492

Maitreyee Mahajani - Saratoga CA, US
Steven D. Marcus - San Jose CA, US
Li-Qun Xia - Cupertino CA, US
Mihaela Balseanu - Sunnyvale CA, US
Victor Nguyen - Novato CA, US
Ning Li - San Jose CA, US
Jingjing Liu - Sunnyvale CA, US
Sukti Chatterjee - Cupertino CA, US
Timothy W. Weidman - Sunnyvale CA, US

C23C 16/32
C23C 16/36
C23C 16/34

427535

Provided are methods and apparatus for low temperature atomic layer deposition of a densified film. A low temperature film is formed and densified by exposure to one or more of a plasma or radical species. The resulting densified film has superior properties to low temperature films formed without densification.

2023006, Mar 2, 2023

Sep 24, 2021

17/485251

- Palo Alto CA, US
Jingjing LIU - Santa Clara CA, US
Jinyu YANG - Arlington TX, US

KWAI INC. - Palo Alto CA

G06K 9/62

A method and an apparatus for training a transferable vision transformer (TVT) for unsupervised domain adaption (UDA) in heterogeneous devices are provided. The method includes that a heterogeneous device including one or more graphic processing units (GPUs) loads multiple patches into the TVT which includes a transferability adaption module (TAM). Furthermore, a patch-level domain discriminator in the TAM assigns weights to the multiple patches and determines one or more transferable patches based on the weights. Moreover, the heterogeneous device generates a transferable attention output for an attention module in the TAM based on the one or more transferable patches.

2021011, Apr 22, 2021

Apr 16, 2019

17/047441

- Veldhoven, NL
Jingjing LIU - San Jose CA, US

ASML NETHERLANDS B.V. - Veldhoven

G03F 7/20
G06F 17/14

A method for determining electromagnetic fields associated with a mask model of a patterning process. The method includes obtaining a mask stack region of interest and an interaction order corresponding to the mask stack region of interest. The mask stack region of interest is divided into sub regions. The mask stack region of interest has one or more characteristics associated with propagation of electromagnetic waves through the mask stack region of interest. The method includes generating one or more electromagnetic field determination expressions based on the Maxwell Equations and the Quantum Schrodinger Equation. The method includes determining an electromagnetic field associated with the mask stack region of interest based on the sub regions of the mask stack region of interest and the characteristics associated with the propagation of electromagnetic waves through the mask stack region of interest, using the one or more electromagnetic field determination expressions.

2020036, Nov 19, 2020

Feb 15, 2019

16/967789

- Veldhoven, NL
Jingjing LIU - San Jose CA, US
Rafael C. HOWELL - Santa Clara CA, US
Xingyue PENG - San Jose CA, US

ASML NETHERLANDS B.V. - Veldhoven

G03F 1/70
G06F 30/398
G03F 1/36

A method to determine a mask pattern for a patterning device. The method includes obtaining a target pattern to be printed on a substrate, an initial continuous tone image corresponding to the target pattern, a binarization function (e.g., a sigmoid, an arctan, a step function, etc.) configured to transform the initial continuous tone image, and a process model configured to predict a pattern on the substrate from an output of the binarization function; and generating a binarized image having a mask pattern corresponding to the initial continuous tone image by iteratively updating the initial continuous tone image based on a cost function such that the cost function is reduced. The cost function (e.g., EPE) determines a difference between a predicted pattern determined by the process model and the target pattern.

2020024, Aug 6, 2020

Jan 31, 2020

16/777941

- Veldhoven, NL
Jingjing Liu - San Jose CA, US

ASML NETHERLANDS B.V. - Veldhoven

G03F 7/20

A method for optimization to increase lithographic apparatus throughput for a patterning process is described. The method includes providing a baseline dose for an EUV illumination and an initial pupil configuration, associated with a lithographic apparatus. The baseline dose and the initial pupil configuration are configured for use with a dose anchor mask pattern and a corresponding dose anchor target pattern for setting an illumination dose for corresponding device patterns of interest. The method includes biasing the dose anchor mask pattern relative to the dose anchor target pattern; determining an acceptable lower dose for the biased dose anchor mask pattern and the initial pupil configuration; unbiasing the dose anchor mask pattern relative to the dose anchor target pattern; and determining a changed pupil configuration and a mask bias for the device patterns of interest based on the acceptable lower dose and the unbiased dose anchor mask pattern.

2020004, Feb 6, 2020

Feb 20, 2018

16/485181

- Veldhoven, NL
Jingjing LIU - San Jose CA, US

ASML NETHERLANDS B.V. - Veldhoven

G03F 1/24
G03F 7/20
G03F 1/36
G03F 1/38

A patterning device, includes: an absorber layer on a patterning device substrate; and a reflective or transmissive layer on the patterning device substrate, wherein the absorber layer and the reflective or transmissive layer together define a pattern layout having a main feature and an attenuated sub-resolution assist feature paired with the main feature, wherein: the main feature is configured to generate, upon transferring the device pattern to a layer of patterning material on a substrate, the main feature in the layer of patterning material, and upon the transferring the pattern to the layer of patterning material, the attenuated sub-resolution assist feature is configured to avoid generating a feature in the layer of patterning material and to produce a different radiation intensity than the main feature.

2019022, Jul 25, 2019

Apr 1, 2019

16/371802

- Santa Clara CA, US
Lucy CHEN - Santa Clara CA, US
Jie ZHOU - San Jose CA, US
Kartik RAMASWAMY - San Jose CA, US
Kenneth S. COLLINS - San Jose CA, US
Srinivas D. NEMANI - Sunnyvale CA, US
Chentsau YING - Cupertino CA, US
Jingjing LIU - Milpitas CA, US
Steven LANE - Porterville CA, US
Gonzalo MONROY - San Francisco CA, US
James D. CARDUCCI - Sunnyvale CA, US

H01L 21/033
C23C 16/26
H01L 21/308
H01J 37/32
H01L 21/02
C23C 16/505
C23C 16/56
C01B 32/25
H01L 21/3213
C23C 16/509

Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.