John H Anthony, 655926 Mescalero Dr, San Jose, CA 95123

6462931, Oct 8, 2002

Oct 23, 1997

08/956407

Shaoping Tang - Plano TX
John Mark Anthony - Richardson TX
Scott Summerfelt - Dallas TX

Texas Instruments Incorporated - Dallas TX

H01G 4008

361305, 361311, 257295, 257303, 257306

A capacitor ( ) with a high dielectric constant oxide dielectric ( ) plus Ir- or Ir and Rh bond over the oxygen site in Barium strontium titanate (BST) dielectric to achieve the high Schottky barrier, and very thin layers of Ir or Rh with conductive oxide backing layers ( ) provide oxygen depletion deterrence. Rh-containing capacitor plates ( ) yielding high Schottky barrier interfaces.

6613698, Sep 2, 2003

May 17, 2001

09/859907

Glen D. Wilk - Dallas TX
John Mark Anthony - McKinney TX
Yi Wei - Dallas TX
Robert M. Wallace - Richardson TX

Texas Instruments Incorporated - Dallas TX

H01L 21318

438775, 438791, 438762, 438769

A method for forming a thermal silicon nitride on a semiconductor substrate is disclosed. This method allows formation of thermal silicon nitride that is thick enough for a FET gate dielectric, but has a low thermal budget.

6730977, May 4, 2004

Jun 3, 2003

10/452999

Glen D. Wilk - Dallas TX
John Mark Anthony - McKinney TX
Yi Wei - Chandler AZ
Robert M. Wallace - Richardson TX

Texas Instruments Incorporated - Dallas TX

H01L 2976

257410, 257327

A method for forming a thermal silicon nitride on a semiconductor substrate is disclosed. This method allows formation of thermal silicon nitride that is thick enough for a FET gate dielectric, but has a low thermal budget.

6777674, Aug 17, 2004

Sep 23, 2002

10/252659

Thomas M. Moore - Dallas TX
John M. Anthony - Austin TX

Omniprobe, Inc. - Dallas TX

G01N 2322

250307, 25044211

We disclose a method for analyzing the composition of a microscopic particle resting on a first sample surface. The method comprises positioning a micro-manipulator probe near the particle; attaching the particle to the probe; moving the probe and the attached particle away from the first sample surface; positioning the particle on a second sample surface; and, analyzing the composition of the particle on the second sample surface by energy-dispersive X-ray analysis or detection of Auger electrons. The second surface has a reduced or non-interfering background signal during analysis relative to the background signal of the first surface. We also disclose methods for adjusting the electrostatic forces and DC potentials between the probe, the particle, and the sample surfaces to effect removal of the particle, and its transfer and relocation to the second sample surface.

6841439, Jan 11, 2005

Jul 15, 1998

09/116138

John Mark Anthony - McKinney TX, US
Scott R. Summerfelt - Garland TX, US
Robert M. Wallace - Richardson TX, US
Glen D. Wilk - Dallas TX, US

Texas Instruments Incorporated - Dallas TX

H01L 218238

438216, 438763

A field effect semiconductor device comprising a high permittivity silicate gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate having a semiconducting channel region formed therein. A metal silicate gate dielectric layer is formed over this substrate, followed by a conductive gate. Silicate layer may be, e. g. , hafnium silicate, such that the dielectric constant of the gate dielectric is significantly higher than the dielectric constant of silicon dioxide. However, the silicate gate dielectric may also be designed to have the advantages of silicon dioxide, e. g. high breakdown, low interface state density, and high stability. The present invention includes methods for depositing both amorphous and polycrystalline silicate layers, as well as graded composition silicate layers.

6897105, May 24, 2005

Sep 15, 1999

09/396642

Glen D. Wilk - Dallas TX, US
Robert M. Wallace - Richardson TX, US
John M. Anthony - Richardson TX, US
Paul McIntyre - Dallas TX, US

Texas Instrument Incorporated - Dallas TX

H01L021/8242
H01L021/44

438240, 438239, 438608, 438957, 438785

An embodiment of the instant invention is a method of forming a electrically conductive structure insulatively disposed from a second structure, the method comprising: providing the second structure; forming the electrically conductive structure of a material (step of FIG. ) that remains substantially conductive after it is oxidized; forming an electrically insulative layer (step of FIG. ) between the second structure and the conductive structure; and oxidizing the conductive structure by subjecting it to an ozone containing atmosphere for a duration of time and at a first temperature.

7115461, Oct 3, 2006

Dec 17, 2004

11/015604

John Mark Anthony - McKinney TX, US
Scott R. Summerfelt - Garland TX, US
Robert M. Wallace - Richardson TX, US
Glen D. Wilk - Dallas TX, US

Texas Instruments Incorporated - Dallas TX

H01L 21/8238

438216, 438287, 438591, 438763, 257E21625

A field effect semiconductor device comprising a high permittivity silicate gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate having a semiconducting channel region formed therein. A metal silicate gate dielectric layer is formed over this substrate, followed by a conductive gate. Silicate layer may be, e. g. , hafnium silicate, such that the dielectric constant of the gate dielectric is significantly higher than the dielectric constant of silicon dioxide. However, the silicate gate dielectric may also be designed to have the advantages of silicon dioxide, e. g. high breakdown, low interface state density, and high stability. The present invention includes methods for depositing both amorphous and polycrystalline silicate layers, as well as graded composition silicate layers.

2001005, Dec 20, 2001

Jun 1, 2001

09/870631

Glen Wilk - Dallas TX, US
Robert Wallace - Richardson TX, US
John Anthony - Richardson TX, US
Paul McIntyre - Dallas TX, US

H01L021/3205
H01L021/4763

438/585000

An embodiment of the instant invention is a method of forming a electrically conductive structure insulatively disposed from a second structure, the method comprising: providing the second structure; forming the electrically conductive structure of a material (step of FIG. ) that remains substantially conductive after it is oxidized; forming an electrically insulative layer (step of FIG. ) between the second structure and the conductive structure; and oxidizing the conductive structure by subjecting it to an ozone containing atmosphere for a duration of time and at a first temperature.