John P Gannon DeceasedFramingham, MA

7632762, Dec 15, 2009

Dec 14, 2006

11/638571

Thomas Tiano - Westford MA, US
John Gannon - Sudbury MA, US
Charles Carey - Burlington MA, US
Brian Farrell - Quincy MA, US
Richard Czerw - Clemmons NC, US

Foster Miller, Inc. - Waltham MA

H01L 51/30

438800, 257E5104, 977888

Carbon nanotube-based devices made by electrolytic deposition and applications thereof are provided. In a preferred embodiment, the present invention provides a device comprising at least one array of active carbon nanotube junctions deposited on at least one microelectronic substrate. In another preferred embodiment, the present invention provides a device comprising a substrate, at least one pair of electrodes disposed on the substrate, wherein one or more pairs of electrodes are connected to a power source, and a bundle of carbon nanotubes disposed between the at least one pair of electrodes wherein the bundle of carbon nanotubes consist essentially of semiconductive carbon nanotubes. In another preferred embodiment, a semiconducting device formed by electrodeposition of carbon nanotubes between two electrodes is provided. The invention also provides preferred methods of forming a semiconductive device by applying a bias voltage to a carbon nanotube rope. The plurality of metallic single-wall carbon nanotubes are removed (e. g.

2006006, Mar 30, 2006

Mar 28, 2005

11/090193

Thomas Tiano - Westford MA, US
John Gannon - Sudbury MA, US
Charles Carey - Burlington MA, US
Brian Farrell - Quincy MA, US
Richard Czerw - Clemmons NC, US

H01L 29/06

257020000, 438962000

Carbon nanotube-based devices made by electrolytic deposition and applications thereof are provided. In a preferred embodiment, the present invention provides a device comprising at least one array of active carbon nanotube junctions deposited on at least one microelectronic substrate. In another preferred embodiment, the present invention provides a device comprising a substrate, at least one pair of electrodes disposed on the substrate, wherein one or more pairs of electrodes are connected to a power source, and a bundle of carbon nanotubes disposed between the at least one pair of electrodes wherein the bundle of carbon nanotubes consist essentially of semiconductive carbon nanotubes. In another preferred embodiment, a semiconducting device formed by electrodeposition of carbon nanotubes between two electrodes is provided. The invention also provides preferred methods of forming a semiconductive device by applying a bias voltage to a carbon nanotube rope. The plurality of metallic single-wall carbon nanotubes are removed (e.g., by application of bias voltage) in an amount sufficient to form the semiconducting device. The devices of the invention include, but not limited to, chemical or biological sensors, carbon nanotube field-effect transistors (CNFETs), tunnel junctions, Schottky junctions, and multi-dimensional nanotube arrays.

2007003, Feb 8, 2007

Jul 28, 2006

11/495400

Brian Farrell - Quincy MA, US
John Gannon - Sudbury MA, US
Thomas Campbell - Concord MA, US
Pat Coppola - Bedford MA, US
Sean O'Reilly - Brighton MA, US
Joseph Burke - Atkinson NH, US

G01R 29/10

343703000

A dual function composite system includes a first electronic subsystem, a second electronic subsystem, and a composite member between the first and second electronic subsystems. The composite member includes plies of fabric, and resin impregnating the plies of fabric. At least one ply of the fabric includes signal transmission elements integrated therewith and interconnecting the first electronic subsystem with the second electronic subsystem.

2007003, Feb 8, 2007

Jul 28, 2006

11/495789

Brian Farrell - Quincy MA, US
John Gannon - Sudbury MA, US
Thomas Campbell - Concord MA, US
Pat Coppola - Bedford MA, US
Sean O'Reilly - Brighton MA, US
Joseph Burke - Atkinson NH, US

F21S 6/00

362257000

An electromechanical structure includes a core and a plurality of conductive pins through the core. The pins are configured to form a signal distribution network from a first side of the core to a second side of the core.

2012024, Sep 27, 2012

Mar 8, 2012

13/414811

Eric R. Podtburg - Natick MA, US
Subramaniam Anandakugan - Acton MA, US
Peter D. Antaya - Sutton MA, US
William L. Carter - Chelmsford MA, US
John Gannon - Sudbury MA, US
Hong Cai - Ayer MA, US
Michael A. Tanner - Westborough MA, US
David Crotzer - Merrimack NH, US
Alexander Otto - Chelmsford MA, US
Dana Krause - Waltham MA, US

American Superconductor Corporation - Devens MA

H01B 13/00
B32B 43/00

505430, 156 94, 228101

A method includes locating a defect in a first segment of high temperature superconducting wire. A second segment of high temperature superconducting wire is then positioned onto the first segment of high temperature superconducting wire such that the second segment of high temperature superconducting wire overlaps the defect. A path is then created such that current flows through the second segment of high temperature superconducting wire. The first segment of high temperature superconducting wire and second segment of high temperature superconducting wire are then laminated together.