John T Hile, 44860 Ironwood Dr APT 331, Rochester, MI 48307

6636036, Oct 21, 2003

Feb 25, 1998

09/030144

Thaddeus Schroeder - Rochester Hills MI
John Wesley Hile - Lake Orion MI

Delphi Technologies, Inc. - Troy MI

G01B 700

32420721, 32420712

In a magnetoresistive sensor employing a single stage comparator circuit for signal threshold detection, an hysteresis deadband is established substantially proportional to signal amplitude. The sensor includes a transducer comprising at least one magnetoresistive element and an hysteresis circuit also including the at least one magnetoresistive element.

5263380, Nov 23, 1993

Feb 18, 1992

7/836678

Michel F. Sultan - Troy MI
Charles R. Harrington - Troy MI
John W. Hile - Lake Orion MI

General Motors Corporation - Detroit MI

G01F 168
G01P 510

7320426

An apparatus comprises a sensor including a heater, an upstream detector and a downstream detector. An AC signal source excites the heater to generate propagating heat signals that are received by the upstream and downstream detectors. A first detecting circuit provides a first output signal responsive to the propagating heat signals received by the first detector and a second detecting circuit provides a second output signal responsive to the propagating heat signals received by the downstream detector. A difference circuit subtracts the first and second signals to obtain a difference signal and an output circuit provides an output signal responsive to the difference signal, which reflects both magnitude and phase. The resulting output signal has improved resolution and provides for improved sensor sensitivity.

4001676, Jan 4, 1977

Aug 27, 1975

5/608076

John W. Hile - Birmingham MI
Paul R. Rabe - Sterling Heights MI

General Motors Corporation - Detroit MI

G01R 2726

324 60CD

An apparatus for providing a warning when the magnitude of a monitored parameter, such as vehicle fuel level, is within a critical range. A charge pump repeatedly charges a variable capacitor having a capacitance progressively changing with the magnitude of the monitored parameter and a reference capacitor having a capacitance equal to the capacitance of the variable capacitor when the magnitude of the monitored parameter is at the threshold of the critical range. After each charge, the two capacitors are discharged at a controlled rate with their voltage charge being monitored by threshold detectors, each of which provides an output when the voltage across the respective capacitor exceeds a specified level. The outputs of the threshold detectors are coupled to a logic circuit which compares the duration of the outputs of the threshold detectors and generates an output when the duration of the output from the level detector monitoring the reference capacitor varies from the time duration of the output from the level detector monitoring the reference capacitor in a sense representing a critical magnitude of the condition. An indicator is responsive to the output signal from the logic circuit for providing a warning of the critical magnitude of the condition.

4119440, Oct 10, 1978

Nov 26, 1976

5/745050

John W. Hile - Birmingham MI

General Motors Corporation - Detroit MI

H01L 2990
H01L 21265

148 15

A method of making a zener diode having an accurately predetermined breakdown voltage. A discrete device and integrated circuit adaptation of this device is disclosed. A specially highly doped opposite conductivity type island is embedded in a high resistivity body portion. Embedded in the body portion contiguous the island is an ion implanted surface portion of the one conductivity type. The surface portion has an accurately predetermined concentration of conductivity determining impurity atoms in the range of about 1. times. 10. sup. 16 to 1. times. 10. sup. 19 atoms per cubic centimeter. A PN junction having a high breakdown voltage separates the island from the body. A PN junction having a lower but accurately predetermined breakdown voltage separates the island from the surface portion and forms a zener junction. In integrated circuit adaptations, this device preferably shares a transistor electrode for a transistor junction that is to be protected from overvoltage effects.

4051504, Sep 27, 1977

Oct 14, 1975

5/622081

John W. Hile - Birmingham MI

General Motors Corporation - Detroit MI

H01L 2990

357 13

A zener diode having an accurately predetermined breakdown voltage, and a method of making such a zener diode. A discrete device and integrated circuit adaptation of this device is disclosed. A specially highly doped opposite conductivity type island is embedded in a high resistivity body portion. Embedded in the body portion contiguous the island is an ion implanted surface portion of the one conductivity type. The surface portion has an accurately predetermined concentration of conductivity determining impurity atoms in the range of about 1. times. 10. sup. 16 to 1. times. 10. sup. 19 atoms per cubic centimeter. A PN junction having a high breakdown voltage separates the island from the body. A PN junction having a lower but accurately predetermined breakdown voltage separates the island from the surface portion and forms a zener junction. In integrated circuit adaptations, this device preferably shares a transistor electrode for a transistor junction that is to be protected from overvoltage effects.