John R Mcfarland, 98Show Low, AZ

7192860, Mar 20, 2007

Apr 2, 2004

10/817563

John A. McFarland - Scottsdale AZ, US
Michael A. Dodd - Chandler AZ, US
Wolfgang Sievert - Wunstorf, DE

Honeywell International Inc. - Morristown NJ

H01L 21/44

438612, 438745, 438756, 252 793

Silicon oxide etching solutions containing the product of at least one bifluoride source compound dissolved in a solvent consisting of at least one carboxylic acid, and further comprising from about 0. 5 to about 3 percent by solution weight of hydrofluoric acid and from about 1 to about 5 percent by solution weight of water, wherein the total concentration of bifluoride source compound is between about 1. 25 and about 5. 0 moles per kilogram of solvent. Methods for selectively removing silicon oxides and metal silicates from metal surfaces are also disclosed.

8153095, Apr 10, 2012

Jun 5, 2003

10/455067

Michael A. Dodd - Chandler AZ, US
John McFarland - Scottsdale AZ, US
Wolfgang Sievert - Wunstorf, DE

Honeywell International Inc. - Morritown NJ

C01B 7/19

423483, 423470, 423471, 423484, 216104

Methods for producing highly pure solutions containing hydrogen fluoride, one or more salts thereof or a mixture of two or more thereof, by adding hydrogen fluoride to at least one anhydrous solvent, wherein the hydrogen fluoride is added to the anhydrous solvent or solvents in the form of a gas or as a liquified gas or as a mixture of gas and liquefied gas. High purity hydrogen fluoride and ammonium fluoride solutions produced by the inventive method are also disclosed.

2003023, Dec 18, 2003

Jun 18, 2002

10/174174

Wolfgang Sievert - Wunstorf, DE
Kurt-Uwe Zimmermann - Neustadt, DE
John McFarland - Scottsdale AZ, US
Michael Dodd - Chandler AZ, US

C23F001/00

216/002000

Acid etching mixtures having water content, reduced by the addition of fluorosulfonic acid. The preparation and the use of said acid etching mixtures, particularly in etching silicon, are also disclosed.

2003023, Dec 25, 2003

Jun 20, 2002

10/176278

Wolfgang Sievert - Wunstorf, DE
John McFarland - Scottsdale AZ, US
Michael Dodd - Chandler AZ, US

H01L021/302
H01L021/461

438/689000

Silicon oxide etching solutions consisting essentially of the product of at least one bifluoride source compound dissolved in a solvent consisting of about 90% to 100% by weight of at least one carboxylic acid and 0 to about 10% by weight water, wherein the total concentration of bifluoride source compound is between about 1.25 and about 5.0 moles per kilogram of solvent. Methods for selectively removing silicon oxides and metal silicates from metal surfaces are also disclosed.

2006025, Nov 16, 2006

Feb 10, 2006

11/352124

Deborah Yellowaga - Phoenix AZ, US
Ben Palmer - Phoenix AZ, US
John Starzynski - Brooklyn Park MN, US
John McFarland - Scottsdale AZ, US
Marie Lowe - Gilbert AZ, US

C09K 13/00
B44C 1/22
C23F 1/00

252079100, 252079300, 216083000

Removal chemistry solutions and methods of production thereof are described herein that include at least one fluorine-based constituent, at least one chelating component, surfactant component, oxidizing component or combination thereof, and at least one solvent or solvent mixture. Removal chemistry solutions and methods of production thereof are also described herein that include at least one low HO content fluorine-based constituent and at least one solvent or solvent mixture.

2009025, Oct 8, 2009

Apr 3, 2008

12/062126

Deborah Yellowaga - Chandler AZ, US
John A. McFarland - Scottsdale AZ, US

HONEYWELL INTERNATIONAL, INC. - Morristown NJ

C09K 13/00
H01L 21/302

438753, 252 791, 257E21214

Post-contact opening etchants for post-etch cleans and methods for fabricating such etchants are provided. In an exemplary embodiment, a post-contact opening etchant comprises anhydrous hydrogen fluoride and a fluoride-dissociation modulating agent. In another embodiment, a method for fabricating a post-contact opening etchant comprises providing anhydrous hydrogen fluoride, combining the anhydrous hydrogen fluoride and a fluoride-dissociation modulating agent, and mixing the anhydrous hydrogen fluoride and the fluoride-dissociation modulating agent to form a homogeneous mixture.