Career records & work history
Lawyers & Attorneys
John C Wager - Lawyer
Licenses:
Oregon - Active 2001
John F Wager, 722021 NW Woodland Dr, Corvallis, OR 97330
John Wager Phones & Addresses
2021 NW Woodland Dr, Corvallis, OR 97330 541-7527016
2038 Woodland Dr, Corvallis, OR 97330 541-7527016
Astoria, OR
Depoe Bay, OR
Otis, OR
Oxnard, CA
Work
Position:
Professional/Technical
Education
Degree:
Graduate or professional degree
Ranks
Licence:
Oregon - Active
Date:
2001
Mentions for John F Wager
John Wager resumes & CV records
Resumes
Professor
Location:
Corvallis, OR
Industry:
Research
Work:
Oregon State University
Professor
Professor
John Wager
John Wager
John Wager
John Wager
John Wager
Location:
United States
Publications & IP owners
Us Patents
Transistor Device Having A Delafossite Material
US Patent:
7026713, Apr 11, 2006
Filed:
Dec 17, 2003
Appl. No.:
10/738690
Inventors:
Randy Hoffman - Corvallis OR, US
John Wager - Corvallis OR, US
John Wager - Corvallis OR, US
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
H01L 23/48
US Classification:
257749, 257 66, 257 69, 257 72, 257 79, 257103, 257347, 438 82, 438 99
Abstract:
A transistor device includes a channel of p-type substantially transparent delafossite material. Source and drain contacts are interfaced to the channel. Gate dielectric is between a gate contact and the channel.
Semiconductor Device
US Patent:
7145174, Dec 5, 2006
Filed:
Mar 12, 2004
Appl. No.:
10/799471
Inventors:
Hai Q. Chiang - Corvallis OR, US
Randy L. Hoffman - Corvallis OR, US
David Hong - Eugene OR, US
Nicole L. Dehuff - Philomath OR, US
John F. Wager - Corvallis OR, US
Randy L. Hoffman - Corvallis OR, US
David Hong - Eugene OR, US
Nicole L. Dehuff - Philomath OR, US
John F. Wager - Corvallis OR, US
Assignee:
Hewlett-Packard Development Company, LP. - Houston TX
Oregon State University - Corvallis OR
Oregon State University - Corvallis OR
International Classification:
H01L 29/04
H01L 29/15
H01L 29/15
US Classification:
257 59, 257 72, 257E21387, 438 48, 438128, 438149, 438151, 438157, 438283
Abstract:
A semiconductor device can include a channel including a zinc-indium oxide film.
Thin Film Transistor With A Passivation Layer
US Patent:
7382421, Jun 3, 2008
Filed:
Oct 12, 2004
Appl. No.:
10/964062
Inventors:
Randy Hoffman - Corvallis OR, US
John Wager - Corvallis OR, US
David Hong - Eugene OR, US
Hai Chiang - Corvallis OR, US
John Wager - Corvallis OR, US
David Hong - Eugene OR, US
Hai Chiang - Corvallis OR, US
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
G02F 1/1343
G02F 1/136
G02F 1/136
US Classification:
349 43, 349 38, 257412
Abstract:
Apparatus comprising a thin film transistor having passivation layer disposed adjacent to a second surface of said channel layer, wherein said passivation layer comprises one or more wide-bandgap dielectric materials.
Semiconductor Device
US Patent:
7626201, Dec 1, 2009
Filed:
Oct 4, 2006
Appl. No.:
11/543548
Inventors:
Hai Q. Chiang - Corvallis OR, US
Randy L. Hoffman - Corvallis OR, US
David Hong - Eugene OR, US
Nicole L. Dehuff - Philomath OR, US
John F. Wager - Corvallis OR, US
Randy L. Hoffman - Corvallis OR, US
David Hong - Eugene OR, US
Nicole L. Dehuff - Philomath OR, US
John F. Wager - Corvallis OR, US
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
H01L 29/04
H01L 29/15
H01L 29/15
US Classification:
257 59, 257 72, 257E29145, 257E29273
Abstract:
A semiconductor device can include a channel including a zinc-indium oxide film.
Semiconductor Device
US Patent:
7629191, Dec 8, 2009
Filed:
Sep 26, 2006
Appl. No.:
11/527372
Inventors:
Hai Q. Chiang - Corvallis OR, US
Randy L. Hoffman - Corvallis OR, US
David Hong - Eugene OR, US
Nicole L. Dehuff - Philomath OR, US
John F. Wager - Corvallis OR, US
Randy L. Hoffman - Corvallis OR, US
David Hong - Eugene OR, US
Nicole L. Dehuff - Philomath OR, US
John F. Wager - Corvallis OR, US
Assignee:
Hewlett-Packard Development Company, L.P. - Houston TX
International Classification:
H01L 29/04
H01L 29/15
H01L 29/15
US Classification:
438 48, 438128, 438149, 438151, 438157, 257 59, 257 72, 257E29154, 257E29273
Abstract:
A semiconductor device can include a channel including a zinc-indium oxide film.
Amorphous Multi-Component Metallic Thin Films For Electronic Devices
US Patent:
8436337, May 7, 2013
Filed:
May 10, 2010
Appl. No.:
12/777194
Inventors:
John F. Wager - Corvallis OR, US
Brady J. Gibbons - Corvallis OR, US
Douglas A. Keszler - Corvallis OR, US
Brady J. Gibbons - Corvallis OR, US
Douglas A. Keszler - Corvallis OR, US
Assignee:
The State of Oregon Acting By and Through The State Board of Higher Education on Behalf of Oregon State Unitiversity - Corvallis OR
International Classification:
H01L 29/72
H01L 21/02
H01L 21/02
US Classification:
257 29, 257506, 257E21002, 257E29327
Abstract:
An electronic structure comprising: (a) a first metal layer; (b) a second metal layer; (c) and at least one insulator layer located between the first metal layer and the second metal layer, wherein at least one of the metal layers comprises an amorphous multi-component metallic film. In certain embodiments, the construct is a metal-insulator-metal (MIM) diode.
Transistor Structures And Methods For Making The Same
US Patent:
2003021, Nov 27, 2003
Filed:
Nov 27, 2002
Appl. No.:
10/307162
Inventors:
John Wager - Corvallis OR, US
Randy Hoffman - Corvallis OR, US
Randy Hoffman - Corvallis OR, US
International Classification:
H01L029/76
US Classification:
257/410000
Abstract:
Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO or SnO. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO or SnO, the substantially insulating ZnO or SnObeing produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.
Transistor Structures And Methods For Making The Same
US Patent:
2003021, Nov 27, 2003
Filed:
Jan 24, 2003
Appl. No.:
10/350819
Inventors:
John Wager - Corvallis OR, US
Randy Hoffman - Corvallis OR, US
Randy Hoffman - Corvallis OR, US
International Classification:
H01L029/76
US Classification:
257/410000
Abstract:
Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO, SnO, or InO. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO, SnOor InO, the substantially insulating ZnO, SnO, or InObeing produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.
Amazon
Stability Of Igzo-Based Thin-Film Transistor: Stability And Temperature-Dependence Assessment Of Igzo Tfts
Author:
Ken Hoshino, John Wager
Publisher:
LAP LAMBERT Academic Publishing
Binding:
Paperback
Pages:
152
ISBN #:
3838399633
EAN Code:
9783838399638
Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing tempe...
Transparent Electronics
Author:
John F. Wager, Douglas A. Keszler, Rick E. Presley
Publisher:
Springer
Binding:
Paperback
Pages:
212
ISBN #:
1441944311
EAN Code:
9781441944313
This monograph is the first roadmap for transparent electronics. It defines and assesses what and where the field is, where it is going, and what needs to happen to get it there. Although the central focus of this monograph involves transparent electronics, many of the materials, devices, circuits, ...
Quiet Year At War
Author:
John Wager
Publisher:
Hamilton Books
Binding:
Paperback
Pages:
124
ISBN #:
0761840273
EAN Code:
9780761840275
In war, when must one say 'No'? This question is certainly as gripping now as it was in 1970 when a young infantry sergeant in the U.S. Army was court-martialed for refusing to obey a direct order to participate in the invasion of Cambodia. This book offers a unique, timely mix of narrative exciteme...
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