Jonathan R Tischler, 4817 Ames St, Sharon, MA 02067
Jonathan Tischler Phones & Addresses
17 Ames St, Sharon, MA 02067 781-7846091
12287 Greenleaf Ave, Potomac, MD 20854 301-2170563
Philadelphia, PA
Fairfax, VA
Mentions for Jonathan R Tischler
Publications & IP owners
Us Patents
Absorbing Film
US Patent:
7799422, Sep 21, 2010
Filed:
Nov 3, 2005
Appl. No.:
11/265109
Inventors:
Jonathan Tischler - Sharon MA, US
Michael Scott Bradley - Cambridge MA, US
Vladimir Bulovic - Lexington MA, US
Michael Scott Bradley - Cambridge MA, US
Vladimir Bulovic - Lexington MA, US
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
B32B 27/06
US Classification:
428338, 428420
Abstract:
A high oscillator strength thin film has an absorption constant greater than or equal to 10cm.
Led Array With Photodetector
US Patent:
8264431, Sep 11, 2012
Filed:
Oct 23, 2003
Appl. No.:
10/693022
Inventors:
Vladimir Bulovic - Lexington MA, US
Jonathan R. Tischler - Sharon MA, US
Jennifer Yu - Chelmsford MA, US
Jonathan R. Tischler - Sharon MA, US
Jennifer Yu - Chelmsford MA, US
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
G09G 3/30
US Classification:
345 77, 345 78, 345 87, 345207
Abstract:
Embodiments of the present invention provide for an array, and corresponding method of forming an array, that includes a plurality of light emitting devices. The light emitting devices are disposed over a substrate, and a photodetector detects light emitted through the substrate from the light emitting devices. Further, a substantially constant brightness may be maintained in a plurality of light emitting devices disposed over the upper surface of a substrate in an array. Light emitted through the substrate from each of the light emitting devices is measured, and the voltage level applied to each of the light emitting devices is varied to maintain a substantially constant brightness level of light emitted from the light emitting devices.
Led Array With Photodetector
US Patent:
8390544, Mar 5, 2013
Filed:
Sep 7, 2012
Appl. No.:
13/606487
Inventors:
Vladimir Bulovic - Lexington MA, US
Jonathan R. Tischler - Sharon MA, US
Jennifer Yu - Chelmsford MA, US
Jonathan R. Tischler - Sharon MA, US
Jennifer Yu - Chelmsford MA, US
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
G09G 3/30
US Classification:
345 77, 345 78, 345 87, 345207
Abstract:
Embodiments of the present invention provide for an array, and corresponding method of forming an array, that includes a plurality of light emitting devices. The light emitting devices are disposed over a substrate, and a photodetector detects light emitted through the substrate from the light emitting devices. Further, a substantially constant brightness may be maintained in a plurality of light emitting devices disposed over the upper surface of a substrate in an array. Light emitted through the substrate from each of the light emitting devices is measured, and the voltage level applied to each of the light emitting devices is varied to maintain a substantially constant brightness level of light emitted from the light emitting devices.
Light-Absorbing Structure And Methods Of Making
US Patent:
8449125, May 28, 2013
Filed:
Feb 14, 2007
Appl. No.:
12/162892
Inventors:
Jonathan R. Tischler - Sharon MA, US
Michael Scott Bradley - Quincy MA, US
Vladimir Bulovic - Lexington MA, US
Michael Scott Bradley - Quincy MA, US
Vladimir Bulovic - Lexington MA, US
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
G02B 27/00
US Classification:
359614, 359601
Abstract:
A critically coupled optical resonator absorbs greater than 95% of incident light of the critical wavelength with an absorber layer less than 10 nm thick.
Optical Structures Including Nanocrystals
US Patent:
8472758, Jun 25, 2013
Filed:
May 21, 2007
Appl. No.:
12/301735
Inventors:
Vladimir Bulovic - Lexington MA, US
Ioannis Kymissis - New York NY, US
Moungi G. Bawendi - Cambridge MA, US
Jonathan R. Tischler - Sharon MA, US
Michael Scott Bradley - Cambridge MA, US
David Oertel - Hamilton OH, US
Jennifer Yu - Chelmsford MA, US
Ioannis Kymissis - New York NY, US
Moungi G. Bawendi - Cambridge MA, US
Jonathan R. Tischler - Sharon MA, US
Michael Scott Bradley - Cambridge MA, US
David Oertel - Hamilton OH, US
Jennifer Yu - Chelmsford MA, US
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
G02F 1/01
US Classification:
385 1
Abstract:
An optical structure can include a nanocrystal on a surface of an optical waveguide in a manner to couple the nanocrystal to the optical field of light propagating through the optical waveguide to generate an emission from the nanocrystal.
Light Emitting Material
US Patent:
8480927, Jul 9, 2013
Filed:
Aug 14, 2008
Appl. No.:
12/673728
Inventors:
Jonathan E. Halpert - Cambridge MA, US
Jonathan R. Tischler - Sharon MA, US
Moungi Bawendi - Cambridge MA, US
Vladimir Bulovic - Lexington MA, US
Jonathan R. Tischler - Sharon MA, US
Moungi Bawendi - Cambridge MA, US
Vladimir Bulovic - Lexington MA, US
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
H01J 1/62
B31B 7/02
B31B 7/02
US Classification:
25230116, 2523016 S, 2523014 S, 2523014 R
Abstract:
A composition can include a first moiety capable of being excited to an excited state, and a second moiety capable of accepting excited state energy from the first moiety. The second moiety is capable of emitting light with a FWHM of 15 nm or less when excited. The second moiety can be a J-aggregate and the first moiety can be a semiconductor nanocrystal.
Light Emitting Device
US Patent:
2009007, Mar 19, 2009
Filed:
Nov 3, 2005
Appl. No.:
11/265199
Inventors:
Jonathan Tischler - Sharon MA, US
Michael Scott Bradley - Cambridge MA, US
Vladimir Bulovic - Lexington MA, US
Michael Scott Bradley - Cambridge MA, US
Vladimir Bulovic - Lexington MA, US
International Classification:
G09G 3/10
H01J 9/04
H01J 9/04
US Classification:
3151693, 445 51
Abstract:
A light emitting device includes an optical cavity in resonance with an optical transition of a material disposed in the cavity. The device can form an exciton-polariton state.
Absorbing Film
US Patent:
2010005, Mar 4, 2010
Filed:
Feb 14, 2007
Appl. No.:
12/162838
Inventors:
Michael Scott Bradley - Cambridge MA, US
Jonathan R. Tischler - Sharon MA, US
Vladimir Bulovic - Lexington MA, US
Jonathan R. Tischler - Sharon MA, US
Vladimir Bulovic - Lexington MA, US
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
H01L 33/00
H01L 21/00
H01L 27/15
H01L 21/00
H01L 27/15
US Classification:
257 80, 438 57, 257432, 257E21001, 257E2712, 257E33001
Abstract:
Materials can be prepared in a layer-by-layer fashion on a patterned first substrate and subsequently transferred to a second substrate. The transfer step can preserve the pattern of the first substrate, such that the second substrate will bear a pattern of the transferred material. The material can be an electrostatic multilayer including a light absorbing dye, such as a J-aggregating cyanine dye.
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