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Jonathan K Winslow, 46Cortlandt Manor, NY

Known as:
Johnathan Winslow Jonathan K Wilslow
Related to:
Elizabeth N Johnson 57

Jonathan Winslow Phones & Addresses

Cortlandt Manor, NY   

Sanford, NC   

57 Mattabasset Dr, Meriden, CT 06450    203-6341633   

57 Mattabasset Dr #57, Meriden, CT 06450    203-6341633   

Yorktown Heights, NY   

Tarrytown, NY   

Ithaca, NY   

Colchester, VT   

Williston, VT   

Westchester, NY   

3470 Strang Blvd, Yorktown Heights, NY 10598   

Work

Position: Clerical/White Collar

Education

Degree: High school graduate or higher
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Jonathan Winslow resumes & CV records

Resumes

Jonathan Winslow Photo 35

Cost Accountant At Gilsa Products & Services Co

Location:
United States
Industry:
Dairy
Jonathan Winslow Photo 36

Jonathan Winslow

Jonathan Winslow Photo 37

Jonathan Winslow

Location:
United States
Jonathan Winslow Photo 38

Jonathan Winslow

Location:
United States
Jonathan Winslow Photo 39

Jonathan Winslow

Location:
United States

Publications & IP owners

Us Patents

Extraction Of Resistance Associated With Laterally Diffused Dopant Profiles In Cmos Devices

US Patent:
2016022, Aug 4, 2016
Filed:
Feb 4, 2015
Appl. No.:
14/613570
Inventors:
- Grand Cayman, KY
Edward J. Nowak - Essex Junction VT, US
Robert R. Robison - Colchester VT, US
Jonathan K. Winslow - Cortlandt Manor NY, US
International Classification:
H01L 21/66
G01R 31/26
H01L 29/45
H01L 21/67
H01L 21/8234
H01L 27/118
Abstract:
Various embodiments provide systems, computer program products and computer implemented methods. In some embodiments, a system includes a computer-implemented method of determining a laterally diffuse dopant profile in semiconductor structures by providing first and second semiconductor structures having plurality of gate array structures in a silicided region separated from each other by a first distance and second distance. A potential difference is applied across the plurality of gate array structures and resistances are determined. A linear-regression fit is performed on measured resistance versus the first distance and the second distance with an extrapolated x equals 0 and a y-intercept to determine a laterally diffused dopant-profile under the plurality of gate array structures based on a semiconductor device model.

Measuring Current And Resistance Using Combined Diodes/Resistor Structure To Monitor Integrated Circuit Manufacturing Process Variations

US Patent:
2014019, Jul 10, 2014
Filed:
Feb 25, 2014
Appl. No.:
14/189682
Inventors:
- Armonk NY, US
Edward J. Nowak - Essex Junction VT, US
Robert R. Robison - Colchester VT, US
Jonathan K. Winslow - Yorktown Heights NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 23/58
H01L 21/66
US Classification:
257 48
Abstract:
A plurality of diode/resistor devices are formed within an integrated circuit structure using manufacturing equipment operatively connected to a computerized machine. Each of the diode/resistor devices comprises a diode device and a resistor device integrated into a single structure. The resistance of each of the diode/resistor devices is measured during testing of the integrated circuit structure using testing equipment operatively connected to the computerized machine. The current through each of the diode/resistor devices is also measured during testing of the integrated circuit structure using the testing equipment. Then, response curves for the resistance and the current are computed as a function of variations of characteristics of transistor devices within the integrated circuit structure and/or variations of manufacturing processes of the transistor devices within the integrated circuit structure.

Possible Relatives

Cynthia L Winslow  David L Winslow  Deborah S Winslow  Daniel Winslow  Aaron M Winslow  Danielle Winslow  Dennis E Winslow  Jonathan L Johnson  Jonathan A Stancil  Jonathan Standridge 

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