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Wei Jei Fang, 58Costa Mesa, CA

Wei Fang Phones & Addresses

Costa Mesa, CA   

San Jose, CA   

El Cerrito, CA   

Monterey Park, CA   

334 Pomelo Ave, Monterey Park, CA 91755    626-9279773   

Work

Position: Executive, Administrative, and Managerial Occupations

Education

Degree: Graduate or professional degree

Mentions for Wei Jei Fang

Career records & work history

Lawyers & Attorneys

Wei Fang Photo 1

Wei An Fang, Rowland Heights CA - Lawyer

Address:
19223 Colima Rd # 969, Rowland Heights, CA 91748
Licenses:
California - Active 2003
Education:
University of San Francisco School of Law
University of California at Los Angeles School of Law
Wei Fang Photo 2

Wei Fang - Lawyer

Address:
Shearman & Sterling LLP
105-9228000 (Office)
Licenses:
New York - Currently registered 2010
Education:
New York University School of Law
Specialties:
Advertising - 34%
Business - 33%
Mergers / Acquisitions - 33%
Wei Fang Photo 3

Wei An Fang, Rowland Heights CA - Lawyer

Address:
18236 Camino Bello, Rowland Heights, CA 91748
Experience:
21 years
Jurisdiction:
California (2003)
Law School:
U of San Francisco School of Law
Education:
Univ of California at Los Angeles, Undergraduate Degree
U of San Francisco School of Law, Law Degree
Memberships:
California State Bar (2003)

Medicine Doctors

Wei Fang Photo 4

Wei Fang, Los Angeles CA

Specialties:
Acupuncture
Address:
4924 Hollywood Blvd Suite B, Los Angeles, CA 90027
323-9130247 (Phone)
Languages:
English

Wei Fang

Specialties:
Anatomic Pathology & Clinical Pathology
Work:
Saint Agnes Medical Center Pathology
1303 E Herndon Ave, Fresno, CA 93720
559-4503130 (phone) 559-4503730 (fax)
Education:
Medical School
Xinjiang Med Coll, Urumqi City, Xinjiang Uygur Auto Reg, China
Graduated: 1989
Languages:
English
Description:
Dr. Fang graduated from the Xinjiang Med Coll, Urumqi City, Xinjiang Uygur Auto Reg, China in 1989. He works in Fresno, CA and specializes in Anatomic Pathology & Clinical Pathology. Dr. Fang is affiliated with Saint Agnes Medical Center.
Wei Fang Photo 5

Wei Fang

Specialties:
Hematology
Anatomic Pathology & Clinical Pathology
Clinical Pathology/Laboratory Medicine
Education:
Xinjiang Medical University (1989)

Wei Fang resumes & CV records

Resumes

Wei Fang Photo 34

Account Receivable Specialist At Ma Labs

Location:
2075 north Capitol Ave, San Jose, CA 95132
Industry:
Information Services
Work:
Ma Labs
Account Receivable Specialist at Ma Labs
Ma Labs Jun 2007 - Dec 2007
Credit Analyst
Pnc Feb 2007 - May 2007
Corporate Trust Intern
Education:
The George Washington University 2005 - 2007
Masters, Accounting
University of Science and Technology of China 1997 - 2000
Masters, Engineering, Management Science
Skills:
Accounting, Excel, Peachtree, Taxwise, Financial Reporting, Accounts Receivable, Accounts Payable
Wei Fang Photo 35

Sales Consultant

Industry:
Automotive
Work:
Aloha Kia
Sales Consultant
Wei Fang Photo 36

Wei Fang

Work:
Huawei Technologies 1999 - 2014
Engineerâ
Wei Fang Photo 37

Project Manager

Location:
San Jose, CA
Work:
China Mobile
Project Manager
Wei Fang Photo 38

Wei Dong Fang

Wei Fang Photo 39

Wei Fang

Wei Fang Photo 40

Wei Fang

Wei Fang Photo 41

Visiting Phd Student

Work:

Visiting Phd Student

Publications & IP owners

Us Patents

In-Line Overlay Measurement Using Charged Particle Beam System

US Patent:
8010307, Aug 30, 2011
Filed:
Dec 5, 2007
Appl. No.:
11/951173
Inventors:
Wei Fang - Milpitas CA, US
Jack Y. Jau - Los Altos Hills CA, US
Hong Xiao - Pleasanton CA, US
Assignee:
Hermes-Microvision, Inc. - Hsinchu
International Classification:
G06F 19/00
US Classification:
702 95, 702 84, 250548, 250221, 2505593, 356401, 3562374, 3562375
Abstract:
A method and system for controlling an overlay shift on an integrated circuit is disclosed. The method and system comprises utilizing a scanning electron microscope (SEM) to measure the overlay shift between a first mask and a second mask of the circuit after a second mask and comparing the overlay shift to information about the integrated circuit in a database. The method and system includes providing a control mechanism to analyze the overlay shift and feed forward to the fabrication process before a third mask for error correction. A system and method in accordance with the present invention advantageously utilizes a scanning electron microscope (SEM) image overlay measurement after the fabrication process such as etching and chemical mechanical polishing (CMP).

Method For Inspecting Overlay Shift Defect During Semiconductor Manufacturing And Apparatus Thereof

US Patent:
8050490, Nov 1, 2011
Filed:
Apr 30, 2009
Appl. No.:
12/433762
Inventors:
Hong Xiao - Pleasanton CA, US
Wei Fang - Milpitas CA, US
Jack Jau - Los Altos Hills CA, US
Assignee:
Hermes Microvision, Inc. - Hsin-Chu
International Classification:
G06K 9/00
US Classification:
382151, 250306, 250307
Abstract:
A method of inspecting for overlay shift defects during semiconductor manufacturing is disclosed. The method can include the steps of providing a charged particle microscopic image of a sample, identifying an inspection pattern period in the charged particle microscopic image, averaging the charged particle microscopic image by using the inspection pattern period to form an averaged inspection pattern period, estimating an average width from the averaged inspection pattern period, and comparing the average width with a predefined threshold value to determine the presence of an overlay shift defect.

Method And System For Determining A Defect During Sample Inspection Involving Charged Particle Beam Imaging

US Patent:
8055059, Nov 8, 2011
Filed:
Dec 23, 2008
Appl. No.:
12/342821
Inventors:
Wei Fang - Milpitas CA, US
Jack Jau - Los Altos Hills CA, US
Assignee:
Hermes Microvision Inc. - Hsinchu
International Classification:
G06K 9/00
US Classification:
382149, 382106, 382151
Abstract:
A method for determining a defect during sample inspection involving charged particle beam imaging transforms a target charged particle microscopic image and its corresponding reference charged particle microscopic images each into a plurality of feature images, and then compares the feature images against each other. Each feature image captures and stresses a specific feature which is common to both the target and reference images. The feature images produced by the same operator are corresponding to each other. A distance between corresponding feature images is evaluated. Comparison between the target and reference images is made based on the evaluated distances to determine the presence of a defect within the target charged particle microscopic image.

E-Beam Defect Review System

US Patent:
8094924, Jan 10, 2012
Filed:
Dec 15, 2008
Appl. No.:
12/335458
Inventors:
Jack Jau - Los Altos Hills CA, US
Zhongwei Chen - San Jose CA, US
Yi Xiang Wang - Fremont CA, US
Chung-Shih Pan - Palo Alto CA, US
Joe Wang - Campbell CA, US
Xuedong Liu - Cupertino CA, US
Weiming Ren - San Jose CA, US
Wei Fang - Milpitas CA, US
Assignee:
Hermes-Microvision, Inc. - Hsinchu
International Classification:
G06K 9/00
US Classification:
382149
Abstract:
An apparatus comprises an imaging unit to image a wafer to be reviewed, wherein imaging unit is the modified SORIL column. The modified SORIL column includes a focusing sub-system to do micro-focusing due to a wafer surface topology, wherein the focusing sub-system verifies the position of a grating image reflecting from the wafer surface to adjust the focus; and a surface charge control to regulate the charge accumulation due to electron irradiation during the review process, wherein the gaseous molecules are injected under a flood gun beam rather than under a primary beam. The modified SORIL column further includes a storage unit for storing wafer design database; and a host computer to manage defect locating, defect sampling, and defect classifying, wherein the host computer and storage unit are linked by high speed network.

Method For Inspecting Euv Reticle And Apparatus Thereof

US Patent:
8217349, Jul 10, 2012
Filed:
Aug 5, 2010
Appl. No.:
12/850899
Inventors:
Chiyan Kuan - Danville CA, US
Wei Fang - Milpitas CA, US
You-Jin Wang - Milpitas CA, US
Assignee:
Hermes Microvision, Inc. - Hsinchu
International Classification:
H01J 37/28
G01N 23/00
G21K 5/00
US Classification:
250310, 250306, 250307, 250311, 250372, 25049222, 430296
Abstract:
A method of inspecting an EUV reticle is proposed, which uses an electron beam (EB) with low density and high energy to scan the surface of an EUV reticle for inspecting the EUV reticle. A step of conditioning surface charge is followed by a step of inspecting surface of the EUV reticle. The step of conditioning surface can neutralize the surface charge and the step of inspecting can obtain an image of the EUV reticle. The present invention uses a scanning electron microscope (SEM) to provide a primary electron beam for conditioning the surface charge and a focused primary electron beam for scanning the surface.

Method Of And System For Placing Clock Circuits In An Integrated Circuit

US Patent:
8225262, Jul 17, 2012
Filed:
Mar 18, 2009
Appl. No.:
12/406883
Inventors:
Marvin Tom - Mountain View CA, US
Wei Mark Fang - Campbell CA, US
Srinivasan Dasasathyan - Sunnyvale CA, US
Assignee:
Xilinx, Inc. - San Jose CA
International Classification:
G06F 17/50
US Classification:
716122, 716114, 716129, 716130
Abstract:
A method of placing clock circuits in an integrated circuit is disclosed. The method comprises receiving a circuit design to be implemented in the integrated circuit; identifying portions of the circuit design comprising clock circuits; determining an order of clock circuits to be placed based upon resource requirements of the clock circuits; and placing the portions of the circuit design comprising clock circuits in sites of the integrated circuit. A system for placing clock circuits in an integrated circuit is also disclosed.

Control Set Constraint Driven Force Directed Analytical Placer For Programmable Integrated Circuits

US Patent:
8230377, Jul 24, 2012
Filed:
Apr 24, 2009
Appl. No.:
12/429991
Inventors:
Wei Mark Fang - Campbell CA, US
Srinivasan Dasasathyan - Sunnyvale CA, US
Assignee:
Xilinx, Inc. - San Jose CA
International Classification:
G06F 17/50
US Classification:
716124, 716104, 716105, 716118, 716119
Abstract:
A computer-implemented method of globally placing a circuit design on a programmable integrated circuit (IC) includes dividing, by a placement system, the programmable IC into a grid comprising a plurality of cells, assigning each component of a selected component type of the circuit design to one of a plurality of control set groups according to a control set of the component, and calculating a force including a control set force that depends upon overlap of control sets within the plurality of cells. The method further can include applying the force to at least one selected component of the circuit design and assigning components of the circuit design to locations on the programmable IC by solving a set of linear equations that depend upon application of the force to the at least one selected component to create a global placement. The circuit design including the global placement can be output.

Method For Examining A Sample By Using A Charged Particle Beam

US Patent:
8299431, Oct 30, 2012
Filed:
Jun 24, 2009
Appl. No.:
12/491013
Inventors:
Yan Zhao - San Jose CA, US
Jack Jau - Los Altos Hills CA, US
Wei Fang - Milpitas CA, US
Assignee:
Hermes Microvision, Inc. - Hsinchu
International Classification:
H01J 37/26
US Classification:
250307, 250306, 250309, 250310, 250311, 430296
Abstract:
A method for examining a sample with a scanning charged particle beam imaging apparatus. First, an image area and a scan area are specified on a surface of the sample. Herein, the image area is entirely overlapped within the scan area. Next, the scan area is scanned by using a charged particle beam along a direction neither parallel nor perpendicular to an orientation of the scan area. It is possible that only a portion of the scan area overlapped with the image area is exposed to the charged particle beam. It also is possible that both the shape and the size of the image area are essentially similar with that of the scan area, such that the size of the area projected by the charged particle beam is almost equal to the size of the image area.

Amazon

Wei Fang Photo 47

Pupil Rule In Regular Script By Ouyang Xun (Chinese Edition)

Author:
wei qiu fang
Publisher:
QiLu Press
Binding:
Paperback
Pages:
90
ISBN #:
7533323971
EAN Code:
9787533323974
Besides attentively laying out and arranging One-Thousand-Character Primer the editor choicely collected rubbing writing from stone inscriptions by Yan Zhenqing, Liu Gongquan and Ouyang Xun among four experts in regular script. He presented traditional enlightenment readings in the form of regular s...

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