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Joseph T Hillman, 644015 N 78Th St UNIT 142, Scottsdale, AZ 85251

Known as:
Joseph T Killman Joesph T Hillman Joseph T Hillamn Joseph Thillman

Joseph Hillman Phones & Addresses

4015 N 78Th St UNIT 142, Scottsdale, AZ 85251    480-2130922   

7777 E Main St #311, Scottsdale, AZ 85251    480-9988969   

7777 Main St, Scottsdale, AZ 85251    480-2192460    480-9988969   

8520 Clydesdale Trl, Scottsdale, AZ 85258    480-9988969   

11051 87Th St, Scottsdale, AZ 85260    480-4431194    480-4431209   

Chandler, AZ   

Morrow, OH   

Williamsville, NY   

Maricopa, AZ   

Phoenix, AZ   

860 N Mcqueen Rd UNIT 1138, Chandler, AZ 85225    480-9988969   

Work

Position: Production Occupations

Education

Degree: Associate degree or higher
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Career records & work history

Medicine Doctors

Joseph C. Hillman

Specialties:
Family Medicine, Occupational Medicine
Work:
University City Urgent Care Clinic
1201 Stark Rd, Starkville, MS 39759
662-3249760 (phone) 662-3249761 (fax)
Education:
Medical School
University of Mississippi School of Medicine
Graduated: 1972
Procedures:
Arthrocentesis, Destruction of Benign/Premalignant Skin Lesions, Psychological and Neuropsychological Tests, Vaccine Administration
Conditions:
Bronchial Asthma, Diabetes Mellitus (DM), Heart Failure, Hypertension (HTN), Hypothyroidism, Migraine Headache, Abnormal Vaginal Bleeding, Acne, Acute Bronchitis, Acute Conjunctivitis, Acute Pancreatitis, Acute Pharyngitis, Acute Sinusitis, Acute Upper Respiratory Tract Infections, Allergic Rhinitis, Anemia, Anxiety Dissociative and Somatoform Disorders, Anxiety Phobic Disorders, Atopic Dermatitis, Atrial Fibrillation and Atrial Flutter, Attention Deficit Disorder (ADD), Bacterial Pneumonia, Benign Prostatic Hypertrophy, Breast Disorders, Calculus of the Urinary System, Candidiasis, Cardiac Arrhythmia, Carpel Tunnel Syndrome, Cholelethiasis or Cholecystitis, Chronic Bronchitis, Contact Dermatitis, Depressive Disorders, Diabetic Peripheral Neuropathy, Disorders of Lipoid Metabolism, Diverticulitis, Emphysema, Endometriosis, Epilepsy, Erectile Dysfunction (ED), Fractures, Dislocations, Derangement, and Sprains, Gastritis and Duodenitis, Gastroesophageal Reflux Disease (GERD), Gout, Hearing Loss, Hemorrhoids, Herpes Genitalis, Herpes Zoster, Infectious Liver Disease, Inflammatory Bowel Disease (IBD), Inguinal Hernia, Internal Derangement of Knee Cartilage, Intervertebral Disc Degeneration, Iron Deficiency Anemia, Irritable Bowel Syndrome (IBS), Labyrinthitis, Lateral Epicondylitis, Lyme Disease, Melanoma, Menopausal and Postmenopausal Disorders, Myasthenia Gravis (MG), Obsessive-Compulsive Disorder (OCD), Obstructive Sleep Apnea, Osteoarthritis, Osteoporosis, Otitis Media, Ovarian Dysfunction, Overweight and Obesity, Paroxysmal Supreventricular Tachycardia (PSVT), Peptic Ulcer Disease, Peripheral Nerve Disorders, Plantar Warts, Prostatitis, Psoriasis, Restless Leg Syndrome, Rheumatoid Arthritis, Rotator Cuff Syndrome and Allied Disorders, Sarcoidosis, Sciatica, Sickle-Cell Disease, Skin and Subcutaneous Infections, Spinal Stenosis, Substance Abuse and/or Dependency, Tempromandibular Joint Disorders (TMJ), Tension Headache, Tinea Unguium, Transient Cerebral Ischemia, Urinary Incontinence, Urinary Tract Infection (UT), Viral Pneumonia, Vitamin B12 Deficiency Anemia, Vitamin D Deficiency
Languages:
English
Description:
Dr. Hillman graduated from the University of Mississippi School of Medicine in 1972. He works in Starkville, MS and specializes in Family Medicine and Occupational Medicine.

Joseph D. Hillman

Specialties:
Anatomic Pathology & Clinical Pathology, Dermatopathology
Work:
Laguna Pathology GroupLaguna Pathology Medical Group
31872 Coast Hwy, Laguna Beach, CA 92651
949-4997288 (phone) 949-4997248 (fax)
Site
Education:
Medical School
Case Western Reserve University School of Medicine
Graduated: 2002
Languages:
English
Description:
Dr. Hillman graduated from the Case Western Reserve University School of Medicine in 2002. He works in Laguna Beach, CA and specializes in Anatomic Pathology & Clinical Pathology and Dermatopathology. Dr. Hillman is affiliated with Mission Hospital and Mission Hospital Laguna Beach.

Joseph Hillman resumes & CV records

Resumes

Joseph Hillman Photo 37

Joseph Hillman

Location:
Phoenix, Arizona Area
Industry:
Semiconductors
Joseph Hillman Photo 38

Joseph Hillman

Joseph Hillman Photo 39

Joseph Hillman

Location:
United States

Publications & IP owners

Us Patents

Apparatus And Method For Preventing The Premature Mixture Of Reactant Gases In Cvd And Pecvd Reactions

US Patent:
6368987, Apr 9, 2002
Filed:
Jun 6, 2000
Appl. No.:
09/587916
Inventors:
Stanislaw Kopacz - Phoenix AZ
Douglas Arthur Webb - Phoenix AZ
Gerrit Jan Leusink - Tempe AZ
Rene Emile LeBlanc - East Haven CT
Michael S. Ameen - Phoenix AZ
Joseph Todd Hillman - Scottsdale AZ
Robert F. Foster - Mesa AZ
Assignee:
Tokyo Electron Limited - Tokyo
International Classification:
H01L 2131
US Classification:
438788, 118723 E, 118725, 118724, 118723 I, 438795
Abstract:
A method and apparatus for depositing a film by chemical vapor deposition comprises a showerhead for dispersing reactant gases into the processing space wherein the showerhead has a first space therein operable for receiving and dispersing the first reacting gas, and has a second space therein, generally isolated from the first space, and operable for receiving and dispersing the second reactant gas separate from the first gas dispersion for maintaining segregation of reactant gases and generally preventing premature mixture of the gases prior to their introduction into the processing space to prevent premature deposition in the system.

Processing System And Method For Chemical Vapor Deposition Of A Metal Layer Using A Liquid Precursor

US Patent:
6409837, Jun 25, 2002
Filed:
Jan 13, 1999
Appl. No.:
09/231357
Inventors:
Joseph T. Hillman - Scottsdale AZ
Assignee:
Tokyo Electron Limited - Tokyo
International Classification:
C23C 1600
US Classification:
118712, 118719, 118726, 118729
Abstract:
A system for depositing a layer of metal onto a substrate through a chemical vapor deposition process comprises a process chamber for receiving and processing a substrate. A vaporizer element is positioned in a vaporization space of the chamber adjacent the process space, and is operable for being heated to a temperature sufficient to vaporize a liquid metal-containing precursor, such as a copper precursor, into a process gas for delivery to said process space. A nozzle is positioned opposite the vaporizer element and is connectable to a liquid metal-containing precursor supply to atomize and direct the liquid metal-containing precursor into the vaporization space and against the vaporizer element. A gas-dispersing element is positioned between the vaporization space and the process space to disperse the gas into the process space and proximate the substrate.

Method For Improving The Adhesion Of Sputtered Copper Films To Cvd Transition Metal Based Underlayers

US Patent:
6455414, Sep 24, 2002
Filed:
Nov 28, 2000
Appl. No.:
09/723878
Inventors:
Joseph T. Hillman - Scottsdale AZ
Cory S. Wajda - Mesa AZ
Steven P. Caliendo - Gold Canyon AZ
Assignee:
Tokyo Electron Limited - Tokyo
International Classification:
H01L 2144
US Classification:
438628
Abstract:
A method for improving adhesion of copper films to transition metal based barrier layers. Tantalum or other transition metal based barrier layers are deposited by chemical vapor deposition techniques using transition metal halide precursor materials which generate halogen atom impurities in the barrier layer. The barrier layer is treated with a plasma generated from a nitrogen-containing gas, such as ammonia. Halogen impurity levels are thereby decreased at the surface of the barrier layer. On this surface is subsequently applied a copper film by physical vapor deposition. The copper film exhibits improved adherence to the barrier layer.

Precursor Deposition Using Ultrasonic Nebulizer

US Patent:
6471782, Oct 29, 2002
Filed:
Nov 23, 1999
Appl. No.:
09/447985
Inventors:
Ching-Ping Fang - Chandler AZ
Joseph T. Hillman - Scottsdale AZ
Assignee:
Tokyo Electronic Limited - Tokyo
International Classification:
C23C 1600
US Classification:
118726, 118715
Abstract:
A chemical vapor deposition (CVD) apparatus for depositing a low vapor pressure copper precursor onto a silicon wafer. The CVD apparatus includes a CVD reaction chamber with an interior containing a substrate holder adapted to support a substrate, such as a silicon wafer, at a predetermined position within the CVD reaction chamber. An ultrasonic nebulizer is operatively connected to the CVD reaction chamber and is adapted to connect to a source of liquid precursor. The ultrasonic nebulizer has an atomizing discharge end adapted to atomize the liquid precursor and deposit the atomized precursor onto a substrate supported by the substrate holder. A gas distribution ring is disposed within the interior of the CVD reaction chamber for discharging a directionally oriented gas into the atomized precursor to direct the atomized precursor toward the substrate. Additional embodiments and methods for depositing the precursor are described.

Method For Pretreating Dielectric Layers To Enhance The Adhesion Of Cvd Metal Layers Thereto

US Patent:
6482477, Nov 19, 2002
Filed:
Nov 28, 2000
Appl. No.:
09/723876
Inventors:
Richard C. Westhoff - Hudson NH
Steven P. Caliendo - Gold Canyon AZ
Joseph T. Hillman - Scottsdale AZ
Assignee:
Tokyo Electron Limited - Tokyo
International Classification:
C23C 1634
US Classification:
427535, 427536, 427537, 427576, 427253, 42725539, 438680, 438685
Abstract:
A method for chemical vapor deposition comprises providing a quantity of nitrogen at the interface between a transition metal-based material and an underlying dielectric-covered substrate. The nitrogen can be provided by heating the substrate in an atmosphere of a nitrogen-containing process gas or by exposing the surface of the dielectric-covered substrate to a plasma generated from a nitrogen-containing process gas. In certain embodiments, the nitrogen on the surface of the dielectric is bound with atoms of a transition metal to form a thin layer of a transition metal nitride. The method promotes the adhesion of the transition metal-based layer to the dielectric by nullifying the effect of halogen atoms that are also incorporated at the transition metal/dielectric interface.

Method For Improving The Adhesion And Durability Of Cvd Tantalum And Tantalum Nitride Modulated Films By Plasma Treatment

US Patent:
6500761, Dec 31, 2002
Filed:
Oct 24, 2001
Appl. No.:
10/000548
Inventors:
Cory Wajda - Mesa AZ
Joseph T. Hillman - Scottsdale AZ
Assignee:
Tokyo Electron Limited - Tokyo
International Classification:
H01L 2144
US Classification:
438685, 438680
Abstract:
A method for forming modulated tantalum/tantalum nitride diffusion barrier stacks on semiconductor device substrates used in interconnect structures. Alternating layers of tantalum and tantalum nitride are deposited onto the semiconductor device substrate by chemical vapor deposition from a tantalum pentafluoride precursor vapor, with intermittent ammonia plasma treatment of the tantalum and tantalum nitride such that each tantalum layer and each tantalum nitride layer are treated at least once to thereby reduce the evolution of HF gas, thereby improving the adhesion and durability of the film stacks during subsequent elevated temperature processing.

Optimized Liners For Dual Damascene Metal Wiring

US Patent:
6508919, Jan 21, 2003
Filed:
Nov 28, 2000
Appl. No.:
09/723874
Inventors:
Thomas J. Licata - Mesa AZ
Joseph T. Hillman - Scottsdale AZ
Assignee:
Tokyo Electron Limited - Tokyo
International Classification:
C23C 1434
US Classification:
20419222, 20419217, 257 9, 257 30, 427 97, 438627
Abstract:
A method of forming diffusion barrier stacks on a dielectric for a dual damascene metal chip-level interconnect, and a diffusion barrier stack produced thereby. Alternating layers of a metal and an electrically resistive diffusion barrier are deposited on a dielectric substrate, with different layers having different thicknesses appropriate to their functions in the device. In an example of the present invention, alternating layers of tantalum and tantalum nitride are deposited on a dielectric substrate.

Apparatus And Method For Delivery Of Precursor Vapor From Low Vapor Pressure Liquid Sources To A Cvd Chamber

US Patent:
6548112, Apr 15, 2003
Filed:
Nov 18, 1999
Appl. No.:
09/442930
Inventors:
Joseph T. Hillman - Scottsdale AZ
Tugrul Yasar - Scottsdale AZ
Kenichi Kubo - Kofu, JP
Vincent Vezin - Yamanashi, JP
Hideaki Yamasaki - Nirasaki, JP
Yasuhiko Kojima - Yamanashi, JP
Yumiko Kawano - Kofu, JP
Hideki Yoshikawa - Nirasaki, JP
Assignee:
Tokyo Electron Limited - Tokyo
International Classification:
C23C 1618
US Classification:
4272481, 427252, 42725514, 42725523, 42725528, 427907
Abstract:
A CVD reactor is provided with a precursor delivery system that is integrally connected to the reactor chamber. Liquid precursor such as a copper or other metal-organic precursor is atomized at the entry of a high flow-conductance vaporizer, preferably with the assistance of an inert sweep gas. Liquid precursor is maintained, when in an unstable liquid state, at or below room temperature. In the vaporizer, heat is introduced to uniformly heat the atomized precursor. The vaporized precursor is passed into a diffuser which diffuses the vapor, either directly or through a showerhead, into the reaction chamber.

Possible Relatives

David Hillman  Dawn M Hillman  Dean H Hillman  Deborah A Hillman  Daniel M Hillman  Aaron C Hillman  Delbert R Hillman  Joseph J Johnson  Joseph D Stamps  Joseph N Stancil 

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