Joseph Lindgren resumes & CV records
Resumes
Joseph R Lindgren, 47Westhaven, CA
Joseph Lindgren Phones & Addresses
Trinidad, CA
Meridian, ID
McKinleyville, CA
953 Pfeifferhorn Dr, Alpine, UT 84004
Provo, UT
American Fork, UT
Saratoga Springs, UT
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Publications & IP owners
Us Patents
Microelectronic Devices With Improved Heat Dissipation And Methods For Cooling Microelectronic Devices
US Patent:
6710442, Mar 23, 2004
Filed:
Aug 27, 2002
Appl. No.:
10/228906
Inventors:
Joseph T. Lindgren - Boise ID
Warren M. Farnworth - Nampa ID
William M. Hiatt - Eagle ID
Nishant Sinha - Boise ID
Warren M. Farnworth - Nampa ID
William M. Hiatt - Eagle ID
Nishant Sinha - Boise ID
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 2310
US Classification:
257706
Abstract:
Microelectronic devices with improved heat dissipation, methods of making microelectronic devices, and methods of cooling microelectronic devices are disclosed herein. In one embodiment, the microelectronic device includes a microelectronic substrate having a first surface, a second surface facing opposite from the first surface, and a plurality of active devices at least proximate to the first surface. The second surface has a plurality of heat transfer surface features that increase the surface area of the second surface. In another embodiment, an enclosure having a heat sink and a single or multi-phase thermal conductor can be positioned adjacent to the second surface to transfer heat from the active devices.
Asymmetric Plating
US Patent:
6767817, Jul 27, 2004
Filed:
Jul 11, 2002
Appl. No.:
10/193001
Inventors:
Warren M. Farnworth - Nampa ID
Joseph T. Lindgren - Boise ID
Joseph T. Lindgren - Boise ID
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
C23C 1832
US Classification:
438612, 427123, 427438
Abstract:
A method and apparatus are disclosed for forming a tapered contact structure over a contact pad. The tapered contact structure may be used to securely anchor an overlying solder bump or solder ball. Additionally, the tapered contact structure allows the use of either larger contact pads or, alternately, allows a greater density of contact pads to be achieved on an integrated circuit substrate.
Nickel Bonding Cap Over Copper Metalized Bondpads
US Patent:
6825564, Nov 30, 2004
Filed:
Aug 21, 2002
Appl. No.:
10/224771
Inventors:
Jeffery N. Gleason - Meridian ID
Joseph T. Lindgren - Boise ID
Joseph T. Lindgren - Boise ID
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 2348
US Classification:
257762, 257766
Abstract:
A method for forming a nickel cap layer over copper metalized bond pad is disclosed in which the phosphorous content of the nickel cap, and particularly the surface of the nickel cap, may be controlled. The phosphorous content of the surface of the nickel cap is suitably determined such that oxidation is inhibited. The resulting nickel cap may be wire-bonded directly, without the deposition of a gold cap layer.
Selective Passivation Of Exposed Silicon
US Patent:
6905953, Jun 14, 2005
Filed:
Jun 3, 2003
Appl. No.:
10/454254
Inventors:
Joseph T. Lindgren - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L021/44
US Classification:
438612, 437667, 437782, 437787
Abstract:
A method for applying a passivation layer selectively on an exposed silicon surface from a liquid phase solution supersaturated in silicon dioxide. The immersion is conducted at substantially atmospheric temperature and pressure and achieves an effective passivation layer in an abbreviated immersion time, and without subsequent heat treatment. In one embodiment, rapid coating of a wafer back side with silicon dioxide permits the use of a high-speed electroless process for plating the bond pad with a solder-enhancing material. In another embodiment, the walls of via holes and microvia holes in a silicon body may be passivated by immersion in the supersaturated solution prior to plugging the holes with conductive material.
Stable Electroless Fine Pitch Interconnect Plating
US Patent:
7052922, May 30, 2006
Filed:
Jul 21, 2003
Appl. No.:
10/622497
Inventors:
Joseph T. Lindgren - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 21/66
US Classification:
438 18, 438612, 438678, 257 48, 257741, 257766
Abstract:
A method and apparatus for plating facilitates the plating of a small contact feature of a wafer die while providing a relatively stable plating bath. The method utilizes a supplemental plating structure that is larger than a die contact that is to be plated. The supplemental plating structure may be located on the wafer, and is conductively connected to the die contact. Conductive connection between the die contact and the supplemental plating structure facilitates the plating of the die contact. The supplemental plating structure also can be used to probe test the die prior to singulation.
Nickel Bonding Cap Over Copper Metalized Bondpads
US Patent:
7067924, Jun 27, 2006
Filed:
Aug 31, 2004
Appl. No.:
10/930442
Inventors:
Jeffery N. Gleason - Meridian ID, US
Joseph T. Lindgren - Boise ID, US
Joseph T. Lindgren - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 23/48
US Classification:
257762, 257766
Abstract:
A method for forming a nickel cap layer over copper metalized bond pad is disclosed in which the phosphorous content of the nickel cap, and particularly the surface of the nickel cap, may be controlled. The phosphorous content of the surface of the nickel cap is suitably determined such that oxidation is inhibited. The resulting nickel cap may be wire-bonded directly, without the deposition of a gold cap layer.
Microelectronic Devices With Improved Heat Dissipation And Methods For Cooling Microelectronic Devices
US Patent:
7183133, Feb 27, 2007
Filed:
Jan 28, 2004
Appl. No.:
10/767232
Inventors:
Joseph T. Lindgren - Boise ID, US
Warren M. Farnworth - Nampa ID, US
William M. Hiatt - Eagle ID, US
Nishant Sinha - Boise ID, US
Warren M. Farnworth - Nampa ID, US
William M. Hiatt - Eagle ID, US
Nishant Sinha - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 21/44
US Classification:
438106, 438122
Abstract:
Microelectronic devices with improved heat dissipation, methods of making microelectronic devices, and methods of cooling microelectronic devices are disclosed herein. In one embodiment, the microelectronic device includes a microelectronic substrate having a first surface, a second surface facing opposite from the first surface, and a plurality of active devices at least proximate to the first surface. The second surface has a plurality of heat transfer surface features that increase the surface area of the second surface. In another embodiment, an enclosure having a heat sink and a single or multi-phase thermal conductor can be positioned adjacent to the second surface to transfer heat from the active devices.
Nickel Bonding Cap Over Copper Metalized Bondpads
US Patent:
7186636, Mar 6, 2007
Filed:
Aug 11, 2004
Appl. No.:
10/915757
Inventors:
Jeffery N. Gleason - Meridian ID, US
Joseph T. Lindgren - Boise ID, US
Joseph T. Lindgren - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 21/44
US Classification:
438612, 438686, 438E2302, 438E2159, 438687, 438617
Abstract:
A method for forming a nickel cap layer over copper metalized bond pad is disclosed in which the phosphorous content of the nickel cap, and particularly the surface of the nickel cap, may be controlled. The phosphorous content of the surface of the nickel cap is suitably determined such that oxidation is inhibited. The resulting nickel cap may be wire-bonded directly, without the deposition of a gold cap layer.
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