Juan B Tuscano, 732029 Francis Ave, Santa Clara, CA 95051

2003001, Jan 30, 2003

Apr 26, 2002

10/134206

Vincent Ku - San Jose CA, US
Anzhong Chang - San Jose CA, US
Anh Nguyen - Milpitas CA, US
Ming Xi - Milpitas CA, US
Xiaoxiong Yuan - Cupertino CA, US
Juan Tuscano - Santa Clara CA, US
Lawrence Lei - Milpitas CA, US
Seshadri Ganguli - Sunnyvale CA, US
Michael Yang - Palo Alto CA, US
Chen-An Chen - Milpitas CA, US
Ling Chen - Sunnyvale CA, US

APPLIED MATERIALS, INC.

C23C016/00
C23F001/00
H01L021/306

118/715000, 156/345330, 156/345340, 427/248100, 427/255230

A processing chamber is adapted to perform a deposition process on a substrate. The chamber includes a pedestal adapted to hold a substrate during deposition and a gas mixing and distribution assembly mounted above the pedestal. The gas mixing and distribution assembly includes a face plate, a dispersion plate mounted above the face plate, and a mixing fixture mounted above the dispersion plate. The face plate is adapted to present an emissivity invariant configuration to the pedestal. The mixing fixture includes a mixing chamber to which a process gas is flowed and an outer chamber surrounding the mixing chamber. The processing chamber further includes an enclosure and a liner installed inside the enclosure and surrounding the pedestal. The liner defines a gap between the liner and the enclosure. The gap has a minimum width adjacent an exhaust port and a maximum width at a point that is diametrically opposite the exhaust port.