Jun Zhao, 617815 Gingers Cv, Austin, TX 78759

6440495, Aug 27, 2002

Aug 3, 2000

09/632497

Christopher P. Wade - Los Gatos CA
Elaine Pao - Los Altos Hills CA
Yaxin Wang - Fremont CA
Jun Zhao - Cupertino CA

Applied Materials, Inc. - Santa Clara CA

C23C 1606

427250, 42725531, 427255394, 4272557, 427124

The present invention provides a method of depositing ruthenium films on a substrate via liquid source chemical vapor deposition wherein the source material is liquid at room temperature and utilizing process conditions such that deposition of the ruthenium films occurs at a temperature in the kinetic-limited temperature regime. Also provided is a method of depositing a thin ruthenium film on a substrate by liquid source chemical vapor deposition using bis-(ethylcyclopentadienyl) ruthenium by vaporizing the bis-(ethylcyclopentadienyl) ruthenium at a vaporization temperature of about 100-300Â C. to form a CVD source material gas, providing an oxygen source reactant gas and forming a thin ruthenium film on a substrate in a reaction chamber using the CVD source material gas and the oxygen source reactant gas at a substrate temperature of about 100-500Â C.

6464782, Oct 15, 2002

May 23, 1996

08/652194

Visweswaren Sivaramakrishnam - Cupertino CA
Hiroshi Nishizato - Kumamoto, JP
Jun Zhao - Milpitas CA
Ichiro Yokoyama - Sakura, JP

Applied Materials, Inc. - Santa Clara CA

C30B 2516

117202, 118715, 118719, 118726

A process and apparatus is described for the processing of thin films on semiconductor substrates using one or more liquid precursor sources wherein the liquid precursor source with the highest vapor pressure is first vaporized and then introduced as a vapor into a common manifold connected to a processing chamber, with the point of introduction being spaced away from the processing chamber. A second liquid precursor source, having a vapor pressure lower than the first liquid precursor source, is then introduced in vaporized form into the manifold at a point closer to the processing chamber. This is repeated for each liquid precursor source, with each succeeding liquid precursor source having the next lower vapor pressure being introduced in vaporized form into the manifold at a point closer to the processing chamber than the previous liquid precursor source. A temperature gradient may then be maintained along the manifold with the temperature gradually increased in a direction toward the processing chamber while still mitigating premature boiling of the liquid precursor sources prior to vaporization, or condensation of already vaporized liquid precursor sources or components.

6479100, Nov 12, 2002

Apr 5, 2001

09/827878

Xiaoliang Jin - San Jose CA
Christopher P. Wade - Los Gatos CA
Xianzhi Tao - Palo Alto CA
Elaine Pao - Los Altos Hills CA
Yaxin Wang - Fremont CA
Jun Zhao - Cupertino CA

Applied Materials, Inc. - Santa Clara CA

C23C 1640

42725531, 4272557, 427 99, 4271265, 4273762

The present invention provides a method of forming a ruthenium seed layer on a substrate comprising the steps of introducing a ruthenium-containing compound into a CVD apparatus; introducing oxygen into the CVD apparatus; maintaining an oxygen rich environment in the process chamber for the initial formation of a ruthenium oxide seed layer; vaporizing the ruthenium-containing compound; depositing the ruthenium oxide seed layer onto the substrate by chemical vapor deposition; and annealing the deposited ruthenium oxide seed layer in a gas ambient forming a ruthenium seed layer. Also provided is a method of depositing a ruthenium thin metal film using a metalorganic precursor onto a CVD ruthenium seed layer by metalorganic chemical vapor deposition.

6518981, Feb 11, 2003

Nov 12, 1997

08/969058

Jun Zhao - San Jose CA
Timothy L. Kohler - Mountain View CA
Jonathan Hui - Fremont CA

Canon Kabushiki Kaisha - Tokyo

G09G 500

345764, 345589, 345593, 345601, 382168

To generate a color palette having m colors (such as 2 =256 colors) from a color image described in a color space, pixel image data corresponding to the color image is first obtained. A frequency of occurrence for each color in the pixel image data is then determined. Each color in the pixel image data is assigned to one of a predetermined number of cells into which the color space has been partitioned, the predetermined number being not greater than m. The most commonly occurring color is selected in each cell in which a color exists, so as to obtain n palette colors. A vote value is calculated for each unselected color, the vote value being based at least in part on the frequency of occurrence of the color in the pixel image and a weighting factor based on a rank of the color in its corresponding cell, the unselected colors being the colors not selected in the first selecting step. Thereafter, m-n colors are selected as the unselected colors with the highest vote values. Also, input colors in a color image described in a color space are mapped to a reduced palette of m colors derived by partitioning the color space into a predetermined number of cells, there being at least one palette color in each cell that includes an input color.

6527865, Mar 4, 2003

Jun 16, 2000

09/595767

Talex Sajoto - San Jose CA
Charles Dornfest - Fremont CA
Leonid Selyutin - San Leandro CA
Jun Zhao - Cupertino CA
Vincent Ku - San Jose CA
Xiao Liang Jin - San Jose CA

Applied Materials, Inc. - Santa Clara CA

C23C 16000

118715, 118724

The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. In one aspect, an apparatus and process for the control of a gas flowed through a gas feedthrough in a substrate processing chamber and system is provided. In another aspect, a deposition chamber is provided for depositing BST and other materials which require vaporization, especially low volatility precursors which are transported as a liquid to a vaporizer to be converted to vapor phase and which must be transported at elevated temperatures to prevent unwanted condensation on chamber components. The chamber comprises a series of heated temperature controlled internal liners, such as a heated gas feedthrough.

6534360, Mar 18, 2003

Apr 4, 2001

09/826711

Pravin Narwankar - Sunnyvale CA
Jun Zhao - Cupertino CA

Applied Materials, Inc. - Santa Clara CA

H01L 218242

438253, 438396, 438250, 438393

Processes which use the same precursor material for forming a metal electrode deposition as for forming a dielectric layer deposition. The layers may be successively formed in the same chamber, or may be formed in like chambers located in a processing system.

6616767, Sep 9, 2003

Mar 27, 1998

09/057005

Jun Zhao - Cupertino CA
Talex Sajoto - San Jose CA
Charles Dornfest - Fremont CA
Harold Mortensen - Carlsbad CA
Richard Palicka - San Clemente CA

Applied Materials, Inc. - Santa Clara CA

C23C 1600

118723, 15634547

The present invention provides techniques for coupling radio-frequency (RF) power to a metal plate in a ceramic pedestal. Perforations in the metal plate allow ceramic-to-ceramic bonding through the metal plate. The power from an RF power feed is distributed to the perforated metal plate via several electrodes that are spaced away from the centerline of the RF power feed, thus splitting power distribution. A ceramic bonding disk between the metal plate and the RF power feed provides mechanical support for the metal plate and a ceramic body to bond to through the perforations, thus reducing cracking of the metal plate and the surrounding ceramic material.

6635114, Oct 21, 2003

Dec 17, 1999

09/467296

Jun Zhao - Cupertino CA
Charles Dornfest - Fremont CA
Frank Chang - San Jose CA
Xiaoliang Jin - San Jose CA
Po Tang - San Jose CA

Applied Material, Inc. - Santa Clara CA

C23C 1600

118715, 118726, 15634529

The present invention generally provides a deposition chamber for depositing materials which require vaporization, especially low volatility precursors, which are transported as a liquid to a vaporizer to be converted to vapor phase through one or more vaporizing elements and which must be transported at elevated temperatures to prevent unwanted condensation on chamber components. In one aspect, the chamber comprises a series of heated temperature controlled internal liners as vaporizing surfaces which are configured for rapid removal, cleaning and/or replacement and preferably are made of a material having a thermal coefficient of expansion close to that of the deposition material. The vaporizing surfaces âflashâ sprayed liquid precursors on the surface of the vaporizing surfaces and then purify the flashed precursors before flowing further into the system. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules. Preferably, internal surfaces of the chamber are adjustable and maintainable at a suitable temperature above ambient, e. g.