Justin Arrington resumes & CV records
Resumes
Justin Arrington
Justin Arrington
Justin Arrington
Justin R Arrington, 552352 E Hyper Dr, Meridian, ID 83642
Justin Arrington Phones & Addresses
2352 E Hyper Dr, Meridian, ID 83642
Cascade, ID
7806 Fox Tail Way, Boise, ID 83709
Greenville, TX
Mountain Home, ID
Work
Position:
Sales Occupations
Education
Degree:
Associate degree or higher
Mentions for Justin R Arrington
Publications & IP owners
Us Patents
Electron Induced Chemical Etching/Deposition For Enhanced Detection Of Surface Defects
US Patent:
7791055, Sep 7, 2010
Filed:
Jul 10, 2006
Appl. No.:
11/483800
Inventors:
Mark J. Williamson - Boise ID, US
Paul M. Johnson - Boise ID, US
Shawn D. Lyonsmith - Boise ID, US
Gurtej S. Sandhu - Boise ID, US
Justin R. Arrington - Boise ID, US
Paul M. Johnson - Boise ID, US
Shawn D. Lyonsmith - Boise ID, US
Gurtej S. Sandhu - Boise ID, US
Justin R. Arrington - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
G01N 21/86
US Classification:
2505594, 2502081
Abstract:
A method of imaging and identifying defects and contamination on the surface of an integrated circuit is described. The method may be used on areas smaller than one micron in diameter. An energetic beam, such as an electron beam, is directed at a selected IC location having a layer of a solid, fluid or gaseous reactive material formed over the surface. The energetic beam disassociates the reactive material in the region into chemical radicals that either chemically etch the surface preferentially, or deposit a thin layer of a conductive material over the local area around the energetic beam. The surface may be examined as various layers are selectively etched to decorate defects and/or as various layers are locally deposited in the area around the energetic beam. SEM imaging and other analytic methods may be used to identify the problem more easily.
Profiling Solid State Samples
US Patent:
7791071, Sep 7, 2010
Filed:
Aug 14, 2006
Appl. No.:
11/503680
Inventors:
Neal R. Rueger - Boise ID, US
Mark J. Williamson - Boise ID, US
Gurtej S. Sandhu - Boise ID, US
Justin R. Arrington - Boise ID, US
Mark J. Williamson - Boise ID, US
Gurtej S. Sandhu - Boise ID, US
Justin R. Arrington - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 23/58
US Classification:
257 48, 438 14, 257E21521
Abstract:
Methods and apparatus may operate to position a sample, including an imager lens surface, within a processing chamber. Further activities may include creating a layer of reactive material in proximity with the imager lens surface, and exciting a portion of the layer of reactive material in proximity with the imager lens surface to form chemical radicals. Additional activities may include removing a portion of the material in proximity to the excited portion of the imager lens surface to a predetermined level, and continuing the creating, exciting and removing actions until at least one of a plurality of stop criteria occurs.
Electron Induced Chemical Etching And Deposition For Local Circuit Repair
US Patent:
7807062, Oct 5, 2010
Filed:
Jul 10, 2006
Appl. No.:
11/483933
Inventors:
Mark J. Williamson - Boise ID, US
Gurtej S. Sandhu - Boise ID, US
Justin R. Arrington - Boise ID, US
Gurtej S. Sandhu - Boise ID, US
Justin R. Arrington - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 13/00
US Classification:
216 21, 216 13, 216 66
Abstract:
A method of imaging and repairing defects on and below the surface of an integrated circuit (IC) is described. The method may be used in areas as small as one micron in diameter, and may remove the topmost material in the small spot, repeating with various layers, until a desired depth is obtained. An energetic beam, such as an electron beam, is directed at a selected surface location. The surface has an added layer of a solid, fluid or gaseous reactive material, such as a directed stream of a fluorocarbon, and the energetic beam disassociates the reactive material in the region of the beam into radicals that chemically attack the surface. After the defect location is exposed, the method uses the energetic beam to etch undesired materials, and deposit various appropriate materials to fill gaps, and restore the IC to an operational condition.
Electron Induced Chemical Etching For Device Level Diagnosis
US Patent:
7892978, Feb 22, 2011
Filed:
Jul 10, 2006
Appl. No.:
11/483878
Inventors:
Mark J. Williamson - Boise ID, US
Gurtej S. Sandhu - Boise ID, US
Justin R. Arrington - Boise ID, US
Gurtej S. Sandhu - Boise ID, US
Justin R. Arrington - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 21/302
US Classification:
438706, 438689, 438692, 438710, 438 8, 438 3, 216 37, 216 58, 216 62, 216104
Abstract:
A method of imaging and identifying materials, contamination, fabrication errors, and defects on and below the surface of an integrated circuit (IC) is described. The method may be used in areas smaller than one micron in diameter, and may remove IC layers, either selectively or non-selectively, until a desired depth is obtained. An energetic beam, such as an electron beam, is directed at a selected IC location. The IC has a layer of a solid, fluid or gaseous reactive material, such as a directed stream of a fluorocarbon, formed over the surface of the IC. The energetic beam disassociates the reactive material in or on the region into chemical radicals that chemically attack the surface. The surface may be examined as various layers are selectively removed in the controlled area spot etch, and SEM imaging may then be used to diagnose problems.
Method Of Removing Or Deposting Material On A Surface Including Material Selected To Decorate A Particle On The Surface For Imaging
US Patent:
8026501, Sep 27, 2011
Filed:
Aug 26, 2010
Appl. No.:
12/869538
Inventors:
Mark J. Williamson - Boise ID, US
Paul M. Johnson - Boise ID, US
Shawn D. Lyonsmith - Boise ID, US
Gurtej S. Sandhu - Boise ID, US
Justin R. Arrington - Boise ID, US
Paul M. Johnson - Boise ID, US
Shawn D. Lyonsmith - Boise ID, US
Gurtej S. Sandhu - Boise ID, US
Justin R. Arrington - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
G01N 21/86
US Classification:
2505594, 2502081
Abstract:
A method that may be applied to imaging and identifying defects and contamination on the surface of an integrated circuit is described. An energetic beam, such as an electron beam, may be directed at a selected IC location having a layer of a solid, fluid, or gaseous reactive material formed over the surface. The energetic beam disassociates the reactive material in the region into chemical radicals that either chemically etch the surface preferentially, or deposit a thin layer of a conductive material over the local area around the energetic beam. The surface may be examined as various layers are selectively etched to decorate defects and/or as various layers are locally deposited in the area around the energetic beam. SEM imaging and other analytic methods may be used to identify the problem more easily.
Profiling Solid State Samples
US Patent:
8389415, Mar 5, 2013
Filed:
Aug 23, 2010
Appl. No.:
12/861543
Inventors:
Neal R. Rueger - Boise ID, US
Mark J. Williamson - Boise ID, US
Gurtej S. Sandhu - Boise ID, US
Justin R. Arrington - Boise ID, US
Mark J. Williamson - Boise ID, US
Gurtej S. Sandhu - Boise ID, US
Justin R. Arrington - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 21/302
US Classification:
438706, 257E21245
Abstract:
Methods and apparatus may operate to position a sample within a processing chamber and operate on a surface of the sample. Further activities may include creating a layer of reactive material in proximity with the surface, and exciting a portion of the layer of reactive material in proximity with the surface to form chemical radicals. Additional activities may include removing a portion of the material in proximity to the excited portion of the surface to a predetermined level, and continuing the creating, exciting and removing actions until at least one of a plurality of stop criteria occurs.
Profiling Solid State Samples
US Patent:
8609542, Dec 17, 2013
Filed:
Mar 4, 2013
Appl. No.:
13/784468
Inventors:
Mark J. Williamson - Boise ID, US
Gurtej S. Sandhu - Boise ID, US
Justin R. Arrington - Boise ID, US
Gurtej S. Sandhu - Boise ID, US
Justin R. Arrington - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 21/311
US Classification:
438695, 216 26, 257E33073
Abstract:
Methods may operate to position a sample within a processing chamber and operate on a surface of the sample. Further activities may include creating a layer of reactive material in proximity with the surface, and exciting a portion of the layer of reactive material in proximity with the surface to form chemical radicals. Additional activities may include removing a portion of the material in proximity to the excited portion of the surface to a predetermined level, and continuing the creating, exciting and removing actions until at least one of a plurality of stop criteria occurs.
Electron Induced Chemical Etching For Materials Characterization
US Patent:
2007027, Dec 6, 2007
Filed:
Jun 1, 2006
Appl. No.:
11/421711
Inventors:
Mark J. Williamson - Boise ID, US
Gurtej S. Sandhu - Boise ID, US
Justin R. Arrington - Boise ID, US
Neal R. Rueger - Boise ID, US
Gurtej S. Sandhu - Boise ID, US
Justin R. Arrington - Boise ID, US
Neal R. Rueger - Boise ID, US
International Classification:
C03C 25/68
G01L 21/30
G01L 21/30
US Classification:
216 58, 216 59, 216 60, 15634539, 1563454
Abstract:
A method of imaging and identifying materials on and below the surface of a structure is described. The method may be used in areas as small as one micron in diameter, and may remove a thin portion of the topmost material, repeating the analysis, until a desired depth is obtained. An energetic beam, such as an electron beam, is directed at a selected surface location. The surface has an added layer of a solid, fluid or gaseous reactive material, such as a directed stream of a fluorocarbon, and the energetic beam disassociates the reactive material in the region of the beam into radicals that chemically attack the surface. The reaction products from the radical attack on the surface are pumped away from the surface and analyzed using various methods, such as optical emission, infrared, atomic absorption, or Raman spectroscopy.
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